Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors BC857T,115

Name: BC857T,115
Brand: NXP Semiconductors
SKU: BC857T,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BC857T,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: SC-75, SOT-416

Datasheet:: BC857T,115.pdf

Description:: TRANS PNP 45V 0.1A SC-75

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,295

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BC857T,115 from Nexperia is a PNP general purpose transistor in SC-75 (SOT416) package, rated for −45 V V_CEO, −100 mA I_C, and 150 mW P_tot, used for low-power switching and amplification in portable battery-powered equipment.

For engineers reviewing the BC857T,115 datasheet, BC857T,115 pinout, BC857T,115 application, or BC857T,115 equivalent, this page delivers verified electrical parameters, thermal resistance (833 K/W), h_FE range (420–800), V_CEsat at −100 mA, and SC-75 package mapping - all critical for compact, low-voltage analog and digital interface designs.

Technical Context

This PNP bipolar junction transistor operates with emitter-base forward bias and collector-base reverse bias, supporting DC amplification and saturated switching. Its h_FE of 420–800 at I_C = −2 mA and V_CE = −5 V enables high-gain signal conditioning in low-current stages.

Thermal performance is defined for FR4 PCB mounting (R_{th j-a} = 833 K/W), and saturation behavior is characterized at I_C/I_B = 20, with V_CEsat ≤ −400 mV at −100 mA/−5 mA drive - confirming suitability for efficient low-side switch applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V: Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage in PNP switch configurations.
I_C (DC)	−100 mA: Continuous collector current rating; sets upper limit for steady-state load switching in portable logic interfaces.
P_tot	150 mW at T_amb ≤ 25 °C: Total power dissipation limit on FR4 board; constrains thermal design margin in space-constrained layouts.
h_FE	420–800 at −2 mA/−5 V: DC current gain range for BC857CT variant; ensures reliable base drive reduction in amplifier or level-shift circuits.
V_CEsat	≤ −400 mV at −100 mA/−5 mA: Low saturation voltage confirms minimal conduction loss when used as an active low-side switch.
f_T	100 MHz: Transition frequency at −10 mA/−5 V; supports small-signal amplification up to mid-VHF band.
R_{th j-a}	833 K/W: Junction-to-ambient thermal resistance on FR4; informs derating curves and maximum ambient temperature for continuous operation.

Pinout & Package

SC-75 (SOT416) plastic surface-mounted package: 3-lead, 1.8 mm × 1.4 mm × 0.9 mm body, 0.95 mm lead pitch, designed for high-density PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on.
2	Emiter	Current source terminal in PNP configuration; connected to higher potential (e.g., V_CC) in common-emitter switch layouts.
3	Collector	Current sink terminal; delivers load current to ground or lower-potential node when transistor is saturated.

Key Features

Feature	Design Value
High h_FE grade (BC857CT)	420–800 gain enables low-base-drive switching in microcontroller GPIO interfaces without external amplification.
Low V_CEsat	≤ −400 mV at full rated current minimizes power loss and self-heating in battery-critical portable applications.
Small SC-75 footprint	1.8 mm × 1.4 mm outline allows placement in ultra-compact spaces where larger SOT23 devices cannot fit.
Specified f_T = 100 MHz	Supports stable amplification of audio and low-speed digital signals without unintended oscillation or phase shift.

Applications

Portable Audio Amplifiers	Microcontroller GPIO Expanders
Use Scenario: Driving small speaker loads or headphone outputs in battery-powered MP3 players and wearables. IC Role / Device Role / Timing Role: PNP small-signal amplifier stage providing voltage gain and current buffering between DAC output and transducer. Use Value: High h_FE and low V_CEsat preserve battery life while delivering clean, low-distortion analog output at <100 mA peak.	Use Scenario: Level-shifting and current boosting for 3.3 V MCU outputs controlling 5 V peripherals or LEDs. IC Role / Device Role / Timing Role: Active-low switch translating logic-high (3.3 V) to grounded load activation with fast turn-off via base pull-up. Use Value: Fast saturation and guaranteed h_FE ensure reliable switching even with weak MCU drive strength and tight timing budgets.
Low-Power Sensor Signal Conditioning	Compact Power Supply Enable Circuits
Use Scenario: Amplifying weak thermistor or photodiode currents in handheld medical or environmental sensors. IC Role / Device Role / Timing Role: Transimpedance or common-emitter amplifier stage converting nanoamp-level sensor current into usable voltage swing. Use Value: Low ICBO (≤ −15 nA) and stable h_FE across −55 °C to +150 °C ensure precision and repeatability in unregulated ambient conditions.	Use Scenario: Enabling/disabling auxiliary rails (e.g., RF module or display backlight) in IoT edge nodes with strict sleep-mode leakage targets. IC Role / Device Role / Timing Role: High-side or low-side enable switch controlled by system controller, minimizing quiescent current in OFF state. Use Value: Ultra-low IEBO (≤ −100 nA) and −5 V V_EBO rating prevent false turn-on and support deep-sleep current budgets below 1 µA.

Portable Audio Amplifiers

Microcontroller GPIO Expanders

Use Scenario: Driving small speaker loads or headphone outputs in battery-powered MP3 players and wearables.

IC Role / Device Role / Timing Role: PNP small-signal amplifier stage providing voltage gain and current buffering between DAC output and transducer.

Use Value: High h_FE and low V_CEsat preserve battery life while delivering clean, low-distortion analog output at <100 mA peak.

Use Scenario: Level-shifting and current boosting for 3.3 V MCU outputs controlling 5 V peripherals or LEDs.

IC Role / Device Role / Timing Role: Active-low switch translating logic-high (3.3 V) to grounded load activation with fast turn-off via base pull-up.

Use Value: Fast saturation and guaranteed h_FE ensure reliable switching even with weak MCU drive strength and tight timing budgets.

Low-Power Sensor Signal Conditioning

Compact Power Supply Enable Circuits

Use Scenario: Amplifying weak thermistor or photodiode currents in handheld medical or environmental sensors.

IC Role / Device Role / Timing Role: Transimpedance or common-emitter amplifier stage converting nanoamp-level sensor current into usable voltage swing.

Use Value: Low ICBO (≤ −15 nA) and stable h_FE across −55 °C to +150 °C ensure precision and repeatability in unregulated ambient conditions.

Use Scenario: Enabling/disabling auxiliary rails (e.g., RF module or display backlight) in IoT edge nodes with strict sleep-mode leakage targets.

IC Role / Device Role / Timing Role: High-side or low-side enable switch controlled by system controller, minimizing quiescent current in OFF state.

Use Value: Ultra-low IEBO (≤ −100 nA) and −5 V V_EBO rating prevent false turn-on and support deep-sleep current budgets below 1 µA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857B,135	Same SC-75 package; h_FE = 220–475 (lower gain bin); identical V_CEO, V_CEsat, and thermal specs.	Suitable where moderate gain suffices and tighter h_FE tolerance is not required; lower cost in high-volume production.	Select BC857B,135 when design tolerates reduced DC gain and prioritizes cost over maximum signal amplification margin.
MMBT3906LT1G	SOT-23 package (larger than SC-75); h_FE = 100–300; V_CEO = −40 V; R_{th j-a} ≈ 400 K/W (better thermal performance).	Preferred where board space permits larger footprint and higher power dissipation capability is needed for sustained >100 mA loads.	Choose MMBT3906LT1G when thermal management dominates layout constraints and SC-75 size is not mandatory.

Compared with BC857T,115, BC857B,135 offers lower gain at identical size and voltage rating, while MMBT3906LT1G trades footprint efficiency for improved thermal handling and wider availability - making BC857T,115 optimal for ultra-compact, high-gain, low-leakage PNP switching where space is premium.

Availability

BC857T,115 is available at Aetrix Electronics and suitable for portable audio amplifiers, microcontroller GPIO expanders, and low-power sensor signal conditioning requiring stable component supply and consistent SC-75 packaging.

Supply support for BC857T,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, consumer, and wearable markets with high-volume, high-reliability components.

The BC857T,115 belongs to Nexperia's BC856T/BC857T series of PNP general purpose transistors, engineered for low-voltage, low-current switching and amplification in space-constrained portable electronics.

FAQ

What is the maximum collector-emitter voltage rating for BC857T,115?

The BC857T,115 has a maximum collector-emitter voltage (V_CEO) rating of −45 V under open-base conditions. This value is specified for the BC857AT/BC857BT/BC857CT variants per the official Nexperia datasheet and defines the absolute upper limit for safe DC operation in common-emitter configurations without risk of avalanche breakdown.

What is the DC current gain (h_FE) range of BC857T,115 at typical operating conditions?

The BC857T,115 - specifically the BC857CT variant identified by marking code '3G' - exhibits a DC current gain (h_FE) range of 420 to 800 when measured at V_CE = −5 V and I_C = −2 mA, as confirmed in the Nexperia product data sheet. This high-gain bin ensures robust base drive efficiency in low-current amplifier and switching circuits.

What package type does BC857T,115 use, and what are its key mechanical dimensions?

The BC857T,115 uses the SC-75 (SOT416) plastic surface-mounted package, with body dimensions of 1.8 mm × 1.4 mm × 0.9 mm and a lead pitch of 0.95 mm. Its compact 3-lead outline is optimized for high-density PCB layouts in portable and wearable electronics where space is strictly constrained.

Is BC857T,115 suitable for low-noise amplifier applications?

The BC857T,115 has a specified noise figure of ≤10 dB at I_C = −200 μA, V_CE = −5 V, R_S = 2 kΩ, f = 1 kHz, and B = 200 Hz. While not classified as a low-noise transistor, this value supports acceptable performance in non-critical preamplifier stages such as sensor interfacing or audio line drivers where ultra-low noise is not the primary requirement.

What is the thermal resistance (R_{th j-a}) of BC857T,115, and under what conditions is it measured?

The BC857T,115 has a junction-to-ambient thermal resistance (R_{th j-a}) of 833 K/W, measured with the device mounted on a standard FR4 printed-circuit board in free air. This value governs derating curves and determines maximum allowable ambient temperature for continuous operation at rated power dissipation.

BC857T,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 125 @ 2mA, 5V

Power - Max:: 150 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75

BC857T,115 FAQ

1.How can I place an order for BC857T,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857T,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857T,115 reliable?

The price and inventory of BC857T,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857T,115 is usually 5 days.

3.What payment methods are accepted for BC857T,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857T,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857T,115?

BC857T,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857T,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857T,115?

For technical support, including BC857T,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857T,115 requirements.

6.How does Aetrix verify that BC857T,115 is sourced from the original manufacturer or authorized distributors?

All BC857T,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857T,115 meets industry standards.

7.What is the process for return or replacement of BC857T,115?

All BC857T,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC857T,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857T,115 part is unused and in its original packaging.

Return procedure for BC857T,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…