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Nexperia USA Inc. BC857W,115
- Part No.:
- BC857W,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC857W,115.pdf
- Description:
- TRANS PNP 45V 0.1A SOT-323
- Quantity:
- Payment:
- Shipping:
Inventory:8,818
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Product details
Overview
BC857W,115 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −45 V VCEO, −100 mA IC, and DC current gain (hFE) of 125–800 at VCE = −5 V and IC = −2 mA. It serves as a low-power switching or linear amplification device in compact consumer and industrial signal-path circuits.
For engineers reviewing the BC857W,115 datasheet, BC857W,115 pinout, BC857W,115 application, or BC857W,115 equivalent, key selection criteria include its SOT323 footprint compatibility, guaranteed hFE range across temperature, VCE(sat) ≤ −600 mV at IC = −100 mA/IB = −5 mA, and −5 V VEBO rating for base-emitter reverse tolerance.
Technical Context
The BC857W operates as a silicon PNP BJT with epitaxial planar technology, optimized for stable DC current amplification and low-saturation switching in ambient temperatures from −65 °C to +150 °C. Its hFE exhibits minimal variation over IC = −0.1 mA to −100 mA and is characterized at three temperature extremes (−55 °C, 25 °C, 150 °C).
Thermal resistance Rth(j-a) is 625 K/W on standard FR4 PCB (single-sided, 35 µm Cu), and transient thermal impedance curves confirm pulse-handling capability up to 100 ms with duty cycles down to 1%. Device behavior is defined under IEC 60134 absolute maximum ratings, including −45 V VCEO, −50 V VCBO, and −5 V VEBO.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in PNP switch configurations. |
| IC | −100 mA - Continuous collector current rating; sets upper limit for load-driving capability in small-signal stages. |
| hFE | 125–800 - DC current gain at VCE = −5 V, IC = −2 mA; enables predictable biasing and gain stability in amplifier designs. |
| VCE(sat) | ≤ −600 mV - Collector-emitter saturation voltage at IC = −100 mA / IB = −5 mA; ensures low conduction loss in saturated-switch applications. |
| VEBO | −5 V - Emitter-base breakdown voltage; determines maximum reverse base-emitter bias before leakage or damage. |
| Ptot | 200 mW - Total power dissipation at Tamb ≤ 25 °C on standard FR4; constrains thermal design margin in unheatsinked layouts. |
| fT | 100 MHz - Transition frequency at VCE = −5 V, IC = −10 mA; indicates usable bandwidth for RF-coupled or high-speed switching. |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.15 mm × 0.45 mm body, 0.65 mm lead pitch, gull-wing terminations compatible with reflow and wave soldering per IPC-7095.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on. |
| 2 | Emitter (E) | Current source terminal in PNP configuration; typically tied to higher potential rail in common-emitter switches. |
| 3 | Collector (C) | Current sink terminal; connects to load and lower-potential node; carries full output current in active/saturated modes. |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage PNP switching | Rated for −45 V VCEO and −50 V VCBO, enabling use in 3.3 V/5 V logic-level interface and battery-powered rails. |
| High-current-gain consistency | hFE = 125–800 across production lot and temperature (−55 °C to +150 °C), reducing need for gain-bin compensation in production. |
| Low saturation voltage | VCE(sat) ≤ −600 mV at IC = −100 mA ensures <100 mW conduction loss in typical switching loads. |
| Miniature SMT footprint | SOT323 package occupies <1.6 mm² PCB area, supporting high-density layout in space-constrained IoT and portable electronics. |
| Robust thermal performance | Rth(j-a) = 625 K/W on standard FR4 allows ≥150 °C junction operation with <200 mW dissipation-no heatsink required. |
Applications
| LED Driver Circuit | Microcontroller GPIO Interface |
|---|---|
|
Use Scenario: Driving discrete indicator LEDs from 3.3 V microcontroller outputs with current limiting via base resistor. IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to VCC; emitter tied to supply, collector to LED cathode/resistor. Use Value: VCE(sat) ≤ −600 mV ensures >90% LED forward voltage utilization; hFE ≥ 125 guarantees reliable turn-on with ≤10 µA GPIO sourcing. |
Use Scenario: Level-shifting and inverting digital signals between 1.8 V logic and 5 V peripherals. IC Role / Device Role / Timing Role: Active-low open-collector replacement; base driven by low-voltage GPIO, collector pulled up to higher rail. Use Value: −45 V VCEO and −5 V VEBO prevent latch-up during rail mismatch; fT = 100 MHz supports clean edges up to 10 MHz toggle rates. |
| Low-Power Sensor Amplifier | Power Rail Enable Switch |
|
Use Scenario: Amplifying weak analog signals from thermistors or photodiodes in battery-operated sensor nodes. IC Role / Device Role / Timing Role: Common-emitter amplifier stage with emitter degeneration resistor for DC bias stability. Use Value: hFE = 125–800 enables precise gain setting without trimming; noise figure ≤10 dB at 1 kHz ensures minimal SNR degradation. |
Use Scenario: Enabling/disabling 3.3 V or 5 V subsystems (e.g., radio modules, sensors) under MCU control. IC Role / Device Role / Timing Role: High-side PNP switch where emitter connects to input rail, collector feeds downstream LDO or load. Use Value: IC = −100 mA rating supports typical subsystem loads; VCE(sat) ≤ −600 mV limits dropout to <0.6 V at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847W,115 | NPN complement; same SOT323 package, −45 V VCEO, 125–800 hFE, but opposite polarity and biasing requirements. | Requires inverted drive logic and low-side switching topology instead of high-side PNP configuration. | Select when circuit architecture uses NPN-based common-emitter or emitter-follower topologies with grounded emitter. |
| MMBT3906LT1G | Same PNP function, SOT-23 package (larger than SOT323), −40 V VCEO, 100–300 hFE, higher Rth(j-a) (~450 K/W). | Less suitable for ultra-dense layouts; lower hFE range increases base drive sensitivity and reduces noise immunity. | Choose only if SOT-23 footprint is already standardized in design and tighter hFE tolerance is acceptable. |
Compared with BC857W,115, BC847W,115 offers complementary NPN functionality in identical packaging but demands redesign of biasing and topology, while MMBT3906LT1G trades miniaturization and gain consistency for broader industry familiarity and higher thermal resistance.
Availability
BC857W,115 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfaces, low-power sensor amplifiers, and power rail enable switches requiring stable component supply across high-mix, low-volume production runs.
Supply support for BC857W,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BC857W belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-effective, space-efficient signal switching and amplification in battery-powered and high-density electronics.
FAQ
What is the maximum allowable junction temperature for BC857W,115?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in Table 6 of the Nexperia datasheet Rev. 4. Operation above this temperature risks permanent parametric shift or failure. Derating is required above Tamb = 25 °C per the Rth(j-a) = 625 K/W thermal resistance value on standard FR4 PCB.
Does BC857W,115 have a specified transition frequency (fT)?
Yes, fT is 100 MHz, measured at VCE = −5 V, IC = −10 mA, and f = 100 MHz (Table 8). This value reflects the frequency at which current gain drops to unity and confirms suitability for low-MHz signal amplification and fast-switching applications.
How does the BC857W,115 marking code relate to its electrical grade?
The marking code for BC857W,115 is "3H%", where "3H" identifies the BC857W type and "%" is a placeholder for the manufacturing site code (Table 5). Unlike variants BC857AW ("3E%") or BC857CW ("3G%"), the "W" suffix denotes the standard gain bin (125–800 hFE), not a tightened distribution.
Can BC857W,115 be used in linear regulator pass-transistor applications?
No-it is not recommended. While it can operate in the linear region, its Ptot = 200 mW and Rth(j-a) = 625 K/W limit safe continuous dissipation to ~150 mW at room ambient. Linear regulators typically require higher power handling and tighter VCE(sat) control; dedicated pass transistors or LDO ICs are preferred.
BC857W,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 125 @ 2mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BC857W,115 FAQ
1.How can I place an order for BC857W,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC857W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC857W,115 reliable?
The price and inventory of BC857W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857W,115 is usually 5 days.
3.What payment methods are accepted for BC857W,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857W,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC857W,115?
BC857W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC857W,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC857W,115?
For technical support, including BC857W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857W,115 requirements.
6.How does Aetrix verify that BC857W,115 is sourced from the original manufacturer or authorized distributors?
All BC857W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857W,115 meets industry standards.
7.What is the process for return or replacement of BC857W,115?
All BC857W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC857W,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC857W,115 part is unused and in its original packaging.
Return procedure for BC857W,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC857W,115 Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
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