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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC857W,135

Name: BC857W,135
Brand: Nexperia USA Inc.
SKU: BC857W,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC857W,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC857W,135.pdf

Description:: TRANS PNP 45V 0.1A SOT-323

Quantity:: RFQ Add To RFQ list

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Inventory:9,995

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Product details

Overview

BC857W,135 from Nexperia is a PNP bipolar junction transistor in SOT323 (SC-70) package, rated for −45 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 125–800 at V_CE = −5 V and I_C = −2 mA. It serves as a general-purpose switching and amplification device in low-power analog and digital signal paths, including level-shifting circuits in portable consumer electronics.

For engineers reviewing the BC857W,135 datasheet, BC857W,135 pinout, BC857W,135 application, or BC857W,135 equivalent, key selection criteria include its −45 V collector-emitter breakdown voltage, 125–800 h_FE range, SOT323 footprint compatibility, and verified performance at T_amb = −55 °C to +150 °C ambient conditions.

Technical Context

The BC857W,135 operates as a silicon PNP BJT with base-controlled current amplification. Its structure supports linear amplification at low collector currents (≤10 mA) and saturated switching at I_C up to −100 mA with V_CE(sat) ≤ −600 mV at I_C = −100 mA and I_B = −5 mA.

Thermal design relies on R_th(j-a) = 625 K/W on FR4 PCB (single-sided, 35 µm Cu), and it meets IEC 60134 absolute maximum ratings, including T_j ≤ 150 °C and V_EBO = −5 V. No integrated protection features or biasing networks are present - external base resistors are required for stable operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V: Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in low-voltage PNP switch applications.
I_C	−100 mA: Continuous DC collector current rating; sets upper limit for load-driving capability in discrete logic interfaces.
h_FE	125–800 at V_CE = −5 V, I_C = −2 mA: Current gain spread determines base drive sizing tolerance in amplifier or switch designs.
V_CE(sat)	≤ −600 mV at I_C = −100 mA, I_B = −5 mA: Saturation voltage directly impacts power loss and thermal rise in switching mode.
f_T	100 MHz at V_CE = −5 V, I_C = −10 mA: Transition frequency confirms usability in audio-frequency amplification and low-speed digital signal conditioning.
C_c	3 pF at V_CB = −10 V: Collector capacitance affects high-frequency response and stability in RF-adjacent small-signal stages.

Pinout & Package

SOT323 (SC-70) surface-mount plastic package: 1.35 mm × 1.15 mm × 0.45 mm body, 0.65 mm lead pitch, single-row 3-terminal configuration optimized for high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Current-controlled input node; requires external series resistor to limit I_B and ensure predictable h_FE-based gain or saturation.
2	Emitter (E)	Common terminal for PNP topology; connects to higher potential rail (e.g., V_CC) in common-emitter configurations.
3	Collector (C)	Output current terminal; sinks current from load to emitter; polarity must be observed (negative voltage/current relative to emitter).

Key Features

Feature	Design Value
Low-voltage PNP switching	Rated for −45 V V_CEO, enabling use in 3.3 V/5 V rail-referenced logic-level translators and load switches.
High-current-gain option	h_FE up to 800 allows minimal base drive current (e.g., <10 µA at I_C = 2 mA), reducing MCU GPIO loading.
Thermally robust SMT package	R_th(j-a) = 625 K/W on standard FR4 ensures reliable operation up to 150 °C junction temperature without heatsinking.
Low-input-capacitance interface	C_c = 3 pF minimizes Miller effect in high-speed switching, supporting clean edge transitions up to ~10 MHz.

Applications

LED Driver Circuit

Level-Shifting Interface

Use Scenario: Driving indicator LEDs from 3.3 V microcontroller outputs in battery-powered IoT sensors.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to V_DD; turns ON when MCU GPIO pulls base low.

Use Value: Low V_CE(sat) (≤−600 mV) preserves forward voltage margin for red/green LEDs; SOT323 footprint saves board space.

Use Scenario: Translating 1.8 V logic signals to 5 V domains in mixed-voltage FPGA I/O banks.

IC Role / Device Role / Timing Role: Active-low level shifter using common-emitter configuration with pull-up on collector.

Use Value: 100 MHz f_T supports clean 10–20 MHz data rates; h_FE ≥125 ensures full saturation with 10 kΩ base resistor.

Audio Pre-amplifier Stage

Power Supply Enable Switch

Use Scenario: Low-noise pre-amplification of electret microphone output in wearable audio devices.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C ≈ −200 µA for optimal noise figure (NF = 2 dB).

Use Value: NF = 2 dB at I_C = −200 µA, V_CE = −5 V enables SNR > 65 dB in 20 Hz–20 kHz band.

Use Scenario: Enabling/disabling 12 V auxiliary rails in industrial PLC I/O modules via 3.3 V controller.

IC Role / Device Role / Timing Role: High-side switch controlling PMOS gate drive or optocoupler input.

Use Value: −45 V V_CEO safely isolates control logic from 12 V rail transients; −200 mA I_CM handles surge during capacitive load turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847W,135	NPN complement; same SOT323 package, −45 V V_CEO not applicable; V_CEO = +45 V; h_FE 125–800.	Requires circuit topology inversion (e.g., low-side vs. high-side switching); unsuitable for high-side load control without level shift.	Select when NPN topology aligns with existing schematic layout or when sourcing current from ground is preferred.
MMBT3906LT1G	Same PNP function but TO-236 (SOT-23) package; V_CEO = −40 V; h_FE 100–300; R_th(j-a) = 400 K/W.	Larger footprint (2.9 mm × 1.3 mm vs. 1.35 mm × 1.15 mm); higher thermal resistance limits power handling at high ambient.	Choose only if SOT-23 is already standardized in the design or if higher I_CM (−200 mA) is needed with less stringent size constraints.

Compared with BC857W,135, BC847W,135 enables complementary NPN designs but cannot replace PNP-specific high-side functions, while MMBT3906LT1G offers similar electrical specs in a larger, thermally less efficient package - making BC857W,135 optimal for space-constrained, low-power PNP switching where SOT323 is mandated.

Availability

BC857W,135 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, audio pre-amplifier stages, and power supply enable switches requiring stable component supply across prototyping, pilot production, and volume manufacturing.

Supply support for BC857W,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.

The BC857W series belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-effective, space-efficient discrete signal switching and amplification in consumer and industrial electronics.

FAQ

What is the maximum junction temperature for BC857W,135?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent parametric degradation or failure. Derating is required above T_amb = 25 °C per R_th(j-a) = 625 K/W on standard FR4 PCB.

Does BC857W,135 have built-in ESD protection?

No - BC857W,135 is an unclamped bipolar transistor with no integrated ESD protection diodes. External TVS or series resistance is required for handling >2 kV HBM events, especially in handling-sensitive assembly environments or exposed I/O paths.

Can BC857W,135 replace BC857B in the same footprint?

Yes - BC857W,135 uses the identical SOT323 package and pinout as BC857B variants. However, BC857W has h_FE = 125–800 (vs. BC857B's 220–475), so base resistor values may need adjustment to maintain consistent saturation or bias point across production lots.

What is the typical noise figure at audio frequencies?

The noise figure is 2 dB at I_C = −200 µA, V_CE = −5 V, R_S = 2 kΩ, f = 1 kHz, and bandwidth = 200 Hz. This value is measured under small-signal conditions and confirms suitability for low-noise pre-amplifier stages in electret microphone interfaces.

BC857W,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 125 @ 2mA, 5V

Power - Max:: 200 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

BC857W,135 FAQ

1.How can I place an order for BC857W,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857W,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857W,135 reliable?

The price and inventory of BC857W,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857W,135 is usually 5 days.

3.What payment methods are accepted for BC857W,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857W,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857W,135?

BC857W,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857W,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857W,135?

For technical support, including BC857W,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857W,135 requirements.

6.How does Aetrix verify that BC857W,135 is sourced from the original manufacturer or authorized distributors?

All BC857W,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857W,135 meets industry standards.

7.What is the process for return or replacement of BC857W,135?

All BC857W,135 units undergo pre-shipment inspection (PSI). If there is an issue with BC857W,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857W,135 part is unused and in its original packaging.

Return procedure for BC857W,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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