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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BC858AWT1G

Name: BC858AWT1G
Brand: onsemi
SKU: BC858AWT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC858AWT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC858AWT1G.pdf

Description:: TRANS PNP 30V 0.1A SC70-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC858AWT1G from onsemi is a PNP silicon general-purpose transistor in SC−70/SOT−323 package, rated for −30 V V_CEO, −100 mA I_C, and 150 mW power dissipation, used in low-power amplifier and switching circuits in consumer and industrial signal conditioning.

For engineers reviewing the BC858AWT1G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, thermal limits, SOT−323 terminal mapping, AEC−Q101 qualification status, and direct alternatives for discrete BJT selection in space-constrained designs.

Technical Context

The BC858AWT1G operates as a medium-gain PNP bipolar junction transistor with h_FE = 125–250 at I_C = −10 mA and V_CE = −5.0 V, supporting linear amplification and saturated switching. Its f_T = 100 MHz enables audio-frequency gain stability and moderate-speed digital switching.

Thermal design is constrained by R_JA = 883 °C/W on FR−5 board and T_J range of −55 °C to +150 °C. Safe operating area (SOA) is defined up to −30 V and −100 mA under DC conditions, with secondary breakdown limiting pulsed operation above 3 ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines maximum supply rail compatibility in PNP common-emitter stages.
I_C (continuous)	−100 mA - Absolute maximum DC collector current; sets upper limit for biasing and load-driving capability in low-power analog/digital interfaces.
P_D	150 mW - Total device dissipation on FR−5 board at 25 °C ambient; determines thermal derating requirement above 25 °C and heatsinking necessity.
h_FE	125–250 - DC current gain range at −10 mA I_C, −5 V V_CE; enables predictable base drive sizing for switching or linear gain applications.
V_CE(sat)	−0.3 V (typ.) at −10 mA I_C, −0.5 mA I_B - Low saturation voltage ensures minimal conduction loss in high-efficiency PNP switch configurations.
f_T	100 MHz - Current-gain bandwidth product at −10 mA I_C, −5 V V_CE; supports stable small-signal amplification up to mid-audio frequencies.
C_ob	4.5 pF - Output capacitance at −10 V V_CB; impacts high-frequency response and stability in RF-adjacent or fast-switching circuits.

Pinout & Package

BC858AWT1G uses the SC−70/SOT−323 surface-mount package (Case 419, Style 3), measuring 2.0 mm × 1.25 mm × 0.95 mm, optimized for high-density PCB layouts and reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode for forward-active and saturation operation; requires current-limited drive to achieve target h_FE-based collector current.
2	Emiter	Current source terminal in PNP configuration; connected to higher potential rail (e.g., V_CC) in common-emitter amplifier or high-side switch.
3	Collector	Output current sink terminal; connects to load or next stage; reverse-biased during cutoff, forward-biased in active/saturation regions.

Key Features

Feature	Design Value
AEC−Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-enables use in non-safety-critical vehicle subsystems without additional qualification.
Pb−Free, RoHS compliant	Fully compliant with EU RoHS Directive 2011/65/EU and halogen-free/BFR-free requirements-supports eco-design and global market access.
Low-profile SOT−323 package	0.95 mm max height enables stacking, tight spacing, and compatibility with automated pick-and-place and reflow processes in compact consumer electronics.
−55 °C to +150 °C operating range	Wide junction temperature range allows deployment in under-hood automotive modules, industrial controllers, and thermally demanding environments without derating.

Applications

Audio Signal Amplifier	Level-Shifting Interface
Use Scenario: Amplifying microphone or line-level signals in portable audio devices where low quiescent current and minimal distortion are required. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for gain stability and linearity. Use Value: h_FE = 125–250 and f_T = 100 MHz support clean amplification across 20 Hz–20 kHz band without external compensation.	Use Scenario: Translating logic levels between 5 V microcontroller outputs and 3.3 V sensor inputs in mixed-voltage embedded systems. IC Role / Device Role / Timing Role: Active-low level shifter using BC858AWT1G as saturated switch with base resistor network. Use Value: V_CE(sat) ≤ −0.3 V ensures <100 mV drop across collector-emitter, preserving noise margin and enabling reliable 3.3 V recognition.
LED Driver Switch	Power Supply Enable Control
Use Scenario: Driving indicator LEDs in battery-powered IoT nodes where efficiency and board space are critical constraints. IC Role / Device Role / Timing Role: High-side current sink switch controlling LED anode connection to V_BAT via emitter-follower or common-emitter topology. Use Value: −100 mA I_C rating supports driving multiple standard LEDs in parallel; low V_CE(sat) minimizes power loss and thermal rise.	Use Scenario: Enabling/disabling auxiliary power rails (e.g., 3.3 V LDO output) in programmable logic controllers based on MCU GPIO state. IC Role / Device Role / Timing Role: PNP pass transistor configured as high-side enable switch, turning on when base is pulled low. Use Value: −30 V V_CEO accommodates input rails up to 24 V industrial supplies; SOA curve validates safe DC operation at full rated current.

Audio Signal Amplifier

Level-Shifting Interface

Use Scenario: Amplifying microphone or line-level signals in portable audio devices where low quiescent current and minimal distortion are required.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for gain stability and linearity.

Use Value: h_FE = 125–250 and f_T = 100 MHz support clean amplification across 20 Hz–20 kHz band without external compensation.

Use Scenario: Translating logic levels between 5 V microcontroller outputs and 3.3 V sensor inputs in mixed-voltage embedded systems.

IC Role / Device Role / Timing Role: Active-low level shifter using BC858AWT1G as saturated switch with base resistor network.

Use Value: V_CE(sat) ≤ −0.3 V ensures <100 mV drop across collector-emitter, preserving noise margin and enabling reliable 3.3 V recognition.

LED Driver Switch

Power Supply Enable Control

Use Scenario: Driving indicator LEDs in battery-powered IoT nodes where efficiency and board space are critical constraints.

IC Role / Device Role / Timing Role: High-side current sink switch controlling LED anode connection to V_BAT via emitter-follower or common-emitter topology.

Use Value: −100 mA I_C rating supports driving multiple standard LEDs in parallel; low V_CE(sat) minimizes power loss and thermal rise.

Use Scenario: Enabling/disabling auxiliary power rails (e.g., 3.3 V LDO output) in programmable logic controllers based on MCU GPIO state.

IC Role / Device Role / Timing Role: PNP pass transistor configured as high-side enable switch, turning on when base is pulled low.

Use Value: −30 V V_CEO accommodates input rails up to 24 V industrial supplies; SOA curve validates safe DC operation at full rated current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857BWT1G	V_CEO = −45 V, V_CBO = −50 V, h_FE = 220–475 - higher voltage rating and wider gain range than BC858AWT1G.	Preferred where higher supply headroom or tighter gain tolerance is needed, e.g., 5–12 V rail amplifiers with variable load.	Select BC857BWT1G when system V_CC exceeds 30 V or when h_FE > 250 is required for reduced base drive current.
BC856BWT1G	V_CEO = −65 V, V_CBO = −80 V, h_FE = 220–475 - highest voltage rating in family, same gain range as BC857BWT1G.	Suitable for legacy 48 V telecom or industrial control interfaces requiring robust overvoltage margin.	Choose BC856BWT1G only if V_CEO > 45 V is mandatory; otherwise, BC857BWT1G offers better cost/performance balance for most 3.3–12 V designs.

Compared with BC858AWT1G, BC857BWT1G provides higher voltage tolerance and broader h_FE range at identical package and footprint, while BC856BWT1G extends voltage capability further but adds no gain or thermal advantage for typical low-voltage applications.

Availability

BC858AWT1G is available at Aetrix Electronics and suitable for audio signal amplification, level-shifting interfaces, LED driver switches, and power supply enable control requiring stable component supply and AEC−Q101 traceability.

Supply support for BC858AWT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BC858AWT1G belongs to onsemi's general-purpose PNP transistor family designed for cost-sensitive, space-constrained amplifier and switching functions in consumer and industrial electronics.

FAQ

What is the maximum collector-emitter voltage rating for BC858AWT1G?

The BC858AWT1G has a maximum collector-emitter voltage (V_CEO) rating of −30 V at T_A = 25 °C. This value is confirmed in the "Maximum Ratings" table of the official onsemi datasheet (Rev. 6, November 2024). Exceeding this voltage risks irreversible breakdown and device failure, especially under elevated temperature or transient conditions.

Is BC858AWT1G suitable for automotive applications?

Yes, BC858AWT1G is AEC−Q101 qualified and PPAP capable, as explicitly stated in the onsemi datasheet features section. It meets stress test requirements for temperature cycling, high-temperature reverse bias, and ESD, making it appropriate for non-safety-critical automotive subsystems such as body control modules, lighting drivers, and infotainment interfaces.

What is the pin configuration of BC858AWT1G in the SOT−323 package?

The BC858AWT1G uses Style 3 pinout per onsemi's mechanical drawing: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This mapping is validated in the "MARKING DIAGRAM" and "MECHANICAL CASE OUTLINE" sections of the datasheet and applies identically across all BC856/857/858 variants in SC−70/SOT−323.

What is the typical DC current gain (h_FE) of BC858AWT1G at −10 mA collector current?

The BC858AWT1G exhibits h_FE = 125–250 at I_C = −10 mA and V_CE = −5.0 V, per the "ELECTRICAL CHARACTERISTICS" table. This range reflects manufacturing variation and must be accounted for in base resistor design to ensure reliable saturation or linear operation across production lots.

Does BC858AWT1G have lead-free and RoHS-compliant packaging?

Yes, BC858AWT1G is Pb−Free, halogen free/BFR free, and RoHS compliant, as confirmed in the "Features" section of the onsemi datasheet. The "G" suffix in the part number denotes Pb−Free packaging, and the device meets Directive 2011/65/EU requirements without exemptions.

BC858AWT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 125 @ 2mA, 5V

Power - Max:: 150 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-3 (SOT323)

BC858AWT1G FAQ

1.How can I place an order for BC858AWT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for BC858AWT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC858AWT1G reliable?

The price and inventory of BC858AWT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858AWT1G is usually 5 days.

3.What payment methods are accepted for BC858AWT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858AWT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC858AWT1G?

BC858AWT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC858AWT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC858AWT1G?

For technical support, including BC858AWT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858AWT1G requirements.

6.How does Aetrix verify that BC858AWT1G is sourced from the original manufacturer or authorized distributors?

All BC858AWT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858AWT1G meets industry standards.

7.What is the process for return or replacement of BC858AWT1G?

All BC858AWT1G units undergo pre-shipment inspection (PSI). If there is an issue with BC858AWT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC858AWT1G part is unused and in its original packaging.

Return procedure for BC858AWT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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