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Nexperia USA Inc. BC858B,215

Part No.:
BC858B,215
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC858B,215.pdf
Description:
TRANS PNP 30V 0.1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
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Inventory:8,423

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Product details

Overview

BC858B,215 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT23 (TO-236AB) package, rated for −30 V VCEO, −100 mA IC, and 220–475 hFE at VCE = −5 V and IC = −2 mA. It serves as a low-voltage switching or linear amplification device in compact consumer and industrial signal-path circuits.

For engineers reviewing the BC858B,215 datasheet, BC858B,215 pinout, BC858B,215 application, or BC858B,215 equivalent, this page delivers verified electrical specs, validated SOT23 terminal mapping, real-world use cases in level-shifting and load control, and two confirmed drop-in alternatives with documented gain and voltage trade-offs.

Technical Context

This PNP BJT operates in active or saturation mode with fixed emitter-base and collector-emitter junction polarities. Its DC current gain (hFE) is binned to 220–475 at −2 mA collector current and −5 V collector-emitter voltage, ensuring predictable small-signal amplification and reliable on/off switching under defined bias conditions.

Thermal resistance Rth(j-a) is 500 K/W on standard FR4 PCB, limiting continuous power dissipation to 250 mW at Tamb ≤ 25 °C. Saturation voltages are specified at two operating points: VCE(sat) ≤ −650 mV (IC = −100 mA, IB = −5 mA) and ≤ −250 mV (IC = −10 mA, IB = −0.5 mA), enabling accurate loss estimation in switching designs.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −30 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in PNP switch configurations.
IC −100 mA - Continuous DC collector current rating; sets maximum load drive capability in linear or saturated operation.
hFE 220–475 - DC current gain range at VCE = −5 V, IC = −2 mA; determines required base drive for target collector current.
VCE(sat) ≤ −650 mV - Max collector-emitter voltage in saturation at IC = −100 mA, IB = −5 mA; directly impacts conduction loss in switch applications.
VBE(sat) ≤ −850 mV - Max base-emitter voltage in saturation at IC = −100 mA, IB = −5 mA; informs base resistor sizing for full turn-on.
fT 100 MHz - Transition frequency at VCE = −5 V, IC = −10 mA; indicates usable bandwidth for small-signal amplification up to ~10 MHz.
Ptot 250 mW - Total power dissipation on FR4 PCB at 25 °C ambient; constrains thermal design in enclosed or high-density layouts.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads, 1.9 mm × 1.3 mm footprint, 0.95 mm height, and standard reflow-compatible solder pad layout per Figure 15.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input node; requires current-limited drive to achieve target IC based on hFE bin.
2 Emitter (E) Common reference terminal for PNP operation; connected to higher potential rail in most switching topologies.
3 Collector (C) Output current path; sinks current from load toward emitter when biased on.

Key Features

Feature Design Value
Low-voltage PNP switching Rated for −30 V VCEO, enabling use in 3.3 V/5 V logic-level interface and battery-powered systems.
Gain-binned hFE 220–475 range ensures consistent base drive requirements across production lots for predictable circuit behavior.
Compact SMT footprint SOT23 package supports high-density PCB layouts and automated assembly without compromising thermal performance.
Low saturation voltage VCE(sat) ≤ −650 mV at IC = −100 mA reduces conduction loss and self-heating in power-switching roles.

Applications

Logic-Level Signal Inversion LED Current Switching

Use Scenario: Converting TTL/CMOS high-low logic states to inverted output in microcontroller I/O expansion.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter topology, turning ON when base is pulled low relative to emitter.

Use Value: Delivers sharp edge transitions with <1 µs turn-off time due to low Cc (4.5 pF) and controlled saturation depth.

Use Scenario: Driving indicator LEDs from 3.3 V or 5 V supply rails with current limiting via base resistor.

IC Role / Device Role / Timing Role: Constant-current sink for single-color or RGB LED anodes, operated in linear or saturated region.

Use Value: Supports up to 100 mA per channel with VCE(sat) ≤ −650 mV, minimizing voltage headroom loss and heat generation.

Level-Shifting Interface Small-Signal Amplification

Use Scenario: Translating signals between 5 V and 3.3 V domains where source impedance is low and sink capability is required.

IC Role / Device Role / Timing Role: Active pull-down stage referenced to higher-voltage rail, providing bidirectional level translation with minimal propagation delay.

Use Value: Low VBE(sat) (≤ −850 mV) and fast fT (100 MHz) enable clean signal transfer up to 10 MHz without distortion.

Use Scenario: Amplifying audio or sensor signals in portable equipment with limited supply headroom.

IC Role / Device Role / Timing Role: Common-emitter amplifier stage with emitter degeneration, biased for linearity at IC = −2 mA.

Use Value: hFE of 220–475 ensures stable gain setting; low noise figure (2–10 dB) preserves SNR in front-end stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC857B,215 VCEO = −45 V, hFE = 220–475, same SOT23 package Higher breakdown margin allows use in 12 V systems; otherwise functionally identical in 5 V/3.3 V designs Select when system rail exceeds 30 V or higher safety margin is required without changing layout.
BC848B,215 NPN complement; VCEO = −30 V, hFE = 220–475, same SOT23 package Requires inverted biasing and signal polarity; used where NPN topology simplifies driver circuitry Choose only when circuit architecture mandates NPN configuration-no direct functional substitution.

Compared with BC858B,215, BC857B,215 offers +15 V higher VCEO with identical gain and package, while BC848B,215 provides matched gain and voltage ratings but opposite polarity-requiring full schematic revision for replacement.

Availability

BC858B,215 is available at Aetrix Electronics and suitable for logic-level inversion, LED driving, level-shifting interfaces, and small-signal amplification requiring stable component supply across high-mix, low-volume production runs.

Supply support for BC858B,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and analog components, headquartered in Nijmegen, Netherlands.

The BC856/857/858 series targets cost-sensitive, space-constrained applications in consumer, computing, and industrial electronics where proven PNP BJT performance and SOT23 manufacturability are essential.

FAQ

What is the maximum junction temperature for BC858B,215?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in Table 6 of the Nexperia datasheet Rev. 9. Operation above this threshold risks permanent degradation of hFE and increased leakage currents. Derating is required above 25 °C ambient per the 500 K/W thermal resistance specification.

Is BC858B,215 automotive-qualified?

No. Per Section 14 of the datasheet, BC858B,215 is explicitly marked as non-automotive qualified. It has not undergone AEC-Q101 stress testing or automotive-grade reliability screening. For automotive use, Nexperia offers separate −Q qualified variants such as BC858B-Q.

How does the hFE binning affect circuit design?

The BC858B bin guarantees hFE between 220 and 475 at VCE = −5 V and IC = −2 mA. Designers must size base resistors using the minimum hFE (220) to ensure saturation across all units, while verifying that maximum hFE (475) does not cause excessive base current in linear applications.

Can BC858B,215 replace BC857B,215 in existing designs?

Yes, with caution: both share identical hFE range and SOT23 package, but BC858B has lower VCEO (−30 V vs. −45 V). Replacement is safe only if the application's maximum collector-emitter voltage remains ≤30 V; otherwise, premature breakdown may occur during transients or rail variations.

BC858B,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Power - Max:
250 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

BC858B,215 FAQ

1.How can I place an order for BC858B,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC858B,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC858B,215 reliable?

The price and inventory of BC858B,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858B,215 is usually 5 days.

3.What payment methods are accepted for BC858B,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858B,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC858B,215?

BC858B,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC858B,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC858B,215?

For technical support, including BC858B,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858B,215 requirements.

6.How does Aetrix verify that BC858B,215 is sourced from the original manufacturer or authorized distributors?

All BC858B,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858B,215 meets industry standards.

7.What is the process for return or replacement of BC858B,215?

All BC858B,215 units undergo pre-shipment inspection (PSI). If there is an issue with BC858B,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC858B,215 part is unused and in its original packaging.

Return procedure for BC858B,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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