Infineon Technologies BC858BE6433HTMA1

Overview

BC858BE6433HTMA1 from Nexperia is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers h_FE = 220–480 (at I_C = 2 mA), V_CEO = 30 V, V_CE(sat) ≤ 300 mV (I_C = 10 mA, I_B = 0.5 mA), and f_T = 250 MHz - enabling low-noise amplification in portable audio preamps and logic-level translation in automotive body control modules.

For engineers reviewing the BC858BE6433HTMA1 datasheet, BC858BE6433HTMA1 pinout, BC858BE6433HTMA1 application, or BC858BE6433HTMA1 equivalent, key selection criteria include guaranteed h_FE group B performance, AEC-Q101 qualification for automotive use, SOT23 package thermal resistance (R_thJS ≤ 240 K/W), and low-noise operation below 15 kHz.

Technical Context

This device operates as a general-purpose PNP bipolar junction transistor with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its h_FE grouping (B) ensures consistent current gain across production lots, while the 30 V V_CEO rating supports 24 V automotive supply rails with margin.

Thermal design is constrained by its SOT23 package's R_thJS ≤ 240 K/W and P_tot = 330 mW at T_S ≤ 71 °C. Noise figure is specified at 1–4 dB (I_C = 0.2 mA, f = 1 kHz), confirming suitability for low-level analog signal conditioning.

Key Specifications

Pinout & Package

BC858BE6433HTMA1 is housed in a standard SOT23 plastic surface-mount package with gull-wing leads, rated for reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with BC858B,215, BC858BE6433HTMA1 offers identical electrical performance with enhanced traceability; versus MMBT858LT1G, it provides superior thermal capability and tighter h_FE binning - critical for production yield in automotive driver circuits.

Availability

BC858BE6433HTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, portable audio interfaces, industrial sensor signal conditioning, and power rail enable control requiring stable component supply and full AEC-Q101 compliance.

Supply support for BC858BE6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading semiconductor manufacturer specializing in high-volume, high-reliability discrete and logic devices, with global manufacturing and logistics infrastructure.

BC858BE6433HTMA1 belongs to Nexperia's BC856–BC860 family of AEC-Q101-qualified PNP transistors engineered for robust performance in automotive and industrial signal amplification and switching applications.

FAQ

Is BC858BE6433HTMA1 pin-compatible with BC847B?

No - BC858BE6433HTMA1 is a PNP transistor with Base-Emitter-Collector pinout (1-2-3), while BC847B is an NPN device with the same physical SOT23 pin assignment but opposite polarity. Swapping them without circuit redesign will cause functional failure due to reversed current flow and biasing.

What does the "E6433HTMA1" suffix indicate?

The "E6433HTMA1" suffix denotes Nexperia's specific tape-and-reel packaging variant: E6433 = 7-inch reel, 3 mm pitch, 3000 units/reel; HT = humidity level 3 (MSL3); MA1 = lead-free, RoHS-compliant finish. It does not reflect electrical differences from BC858B,215.

Can BC858BE6433HTMA1 replace BC857B in existing designs?

Only with verification - BC857B has V_CEO = 45 V and lower V_CE(sat) (≤250 mV), while BC858BE6433HTMA1 has V_CEO = 30 V and V_CE(sat) ≤ 300 mV. Substitution is acceptable only if the application operates ≤24 V and tolerates the higher saturation voltage.

Does BC858BE6433HTMA1 require derating above 71 °C case temperature?

Yes - its total power dissipation drops linearly above T_S = 71 °C, reaching 0 mW at T_S = 150 °C. At 100 °C case temperature, P_tot is reduced to approximately 120 mW, per the published P_tot vs. T_S curve for BC856–BC860 devices.