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Diodes Incorporated BC858C-7-F
- Part No.:
- BC858C-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BC858C-7-F.pdf
- Description:
- TRANS PNP 30V 0.1A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,031
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Product details
Overview
BC858C-7-F from Diodes Incorporated is a PNP small-signal transistor in SOT23 package, rated for VCEO = −30 V, IC = −100 mA, and hFE = 420–800 at IC = −2 mA, used in low-power switching and audio-frequency amplification circuits within industrial control interfaces and sensor signal conditioning stages.
For engineers reviewing the BC858C-7-F datasheet, BC858C-7-F pinout, BC858C-7-F application, or BC858C-7-F equivalent, this page delivers verified electrical parameters, SOT23 terminal mapping, thermal derating curves, complementary NPN pairing (BC848C), and automotive-grade alternatives with validated VCEO, hFE, and ESD HBM ratings.
Technical Context
This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain hFE tightly binned to 420–800 (Grade C), VCE(sat) ≤ −300 mV at IC = −10 mA/IB = −0.5 mA, and fT ≥ 100 MHz at VCE = −5 V/IC = −10 mA.
It supports pulsed operation up to 200 mA peak collector current with 2% duty cycle, features JEDEC-compliant thermal resistance RθJA = 357 °C/W on 15 mm × 15 mm 1 oz copper, and meets AEC-Q stress qualification for high-reliability industrial use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −30 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in low-voltage PNP switch configurations. |
| hFE (IC = −2 mA) | 420–800 - High DC current gain enables low-base-drive designs in amplifier and linear regulator feedback paths. |
| VCE(sat) | −300 mV max @ IC = −10 mA/IB = −0.5 mA - Low saturation voltage minimizes power loss in discrete logic-level switching applications. |
| fT | ≥100 MHz - Sufficient gain-bandwidth for AF amplification up to ~20 kHz with margin; supports stable biasing in multi-stage preamps. |
| ESD HBM | 4,000 V - Robust electrostatic discharge immunity simplifies handling and board assembly without additional protection circuitry. |
| PD | 350 mW - Power dissipation limit on 15 mm × 15 mm PCB pad; sets maximum continuous IC2RCE(sat) load under ambient conditions. |
Pinout & Package
Package: SOT23 - Surface-mount plastic package with matte tin-plated leads, UL 94V-0 rating, 0.008 g weight, and moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Current source terminal in PNP configuration | Connected to higher potential rail; base-emitter forward bias initiates conduction when VBE ≥ −0.6 V. |
| B (Base) | Control input for minority-carrier injection | Receives negative-going drive signal; requires −0.5 mA typical base current to saturate at IC = −10 mA. |
| C (Collector) | Current sink terminal | Connected to load and ground reference; carries full emitter current minus base current in active mode. |
Key Features
| Feature | Design Value |
|---|---|
| High hFE grade (C) | 420–800 at IC = −2 mA - Reduces required base drive current by >2× versus Grade A/B, lowering MCU GPIO loading in discrete switch designs. |
| Low VCE(sat) | ≤ −300 mV @ IC = −10 mA - Limits conduction loss to <3 mW in 10 mA loads, critical for battery-powered sensor interface stages. |
| AEC-Q qualified | JEDEC-compliant reliability testing - Enables drop-in use in automotive body electronics where extended temperature (−55°C to +150°C) and ESD robustness are mandatory. |
| Green, RoHS 3 compliant | <900 ppm Br/Cl, <1000 ppm Sb - Meets global environmental compliance without performance trade-offs; no halogen-related corrosion risk in humid environments. |
Applications
| Industrial Sensor Interface | Discrete Logic-Level Switching |
|---|---|
|
Use Scenario: Amplifying weak thermistor or RTD bridge outputs in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: PNP common-emitter amplifier stage providing 20–40 dB voltage gain with DC-coupled bias network. Use Value: High hFE ensures stable gain across temperature (−40°C to +85°C), minimizing calibration drift in 16-bit ADC front-ends. |
Use Scenario: Driving LED indicators or optocoupler inputs from microcontroller GPIO pins with limited sink capability. IC Role / Device Role / Timing Role: Low-side PNP switch enabling active-low signaling with fast turn-off via base pull-up resistor. Use Value: VCE(sat) ≤ −300 mV ensures <1% voltage drop across 10 mA LED load, preserving brightness and color accuracy. |
| Audio Pre-amplifier Stage | Power Supply Enable Control |
|
Use Scenario: First-stage amplification of microphone signals in portable voice recorders before op-amp buffering. IC Role / Device Role / Timing Role: Common-collector (emitter-follower) buffer delivering low output impedance and unity voltage gain. Use Value: fT ≥ 100 MHz provides >10× bandwidth margin over 20 kHz audio band, eliminating phase distortion in mid-band frequencies. |
Use Scenario: Enabling/disabling auxiliary 3.3 V LDOs in embedded systems based on system state machine outputs. IC Role / Device Role / Timing Role: High-side PNP switch controlling LDO EN pin with inverted logic from MCU. Use Value: −30 V VCEO rating allows direct connection to 24 V industrial bus rails without level-shifting components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857C-7-F | VCEO = −45 V, hFE = 420–800, same SOT23 package and marking (K3G) | Higher breakdown voltage supports 36 V supply rails; identical gain binning and thermal specs | Select when system rail exceeds 30 V but gain and footprint must remain unchanged. |
| MMBT3906LT1G | VCEO = −40 V, hFE = 100–300 (standard grade), slightly higher RθJA = 375 °C/W | Lower gain consistency and wider hFE spread increases design margin requirements for precision biasing | Choose only for cost-sensitive non-critical switching where gain tolerance >±50% is acceptable. |
Compared with BC858C-7-F, BC857C-7-F offers higher voltage headroom without sacrificing gain or thermal performance, while MMBT3906LT1G trades gain stability and thermal efficiency for broader commercial availability-making BC858C-7-F optimal for precision low-voltage PNP amplification and switching where consistent hFE and low VCE(sat) are essential.
Availability
BC858C-7-F is available at Aetrix Electronics and suitable for industrial sensor interfaces, discrete logic-level switching, and audio pre-amplifier stages requiring stable component supply, consistent hFE binning, and AEC-Q-aligned reliability.
Supply support for BC858C-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, environmentally compliant components for industrial, automotive, and consumer markets.
BC858C-7-F belongs to the BC856A–BC858C PNP transistor family, designed specifically for automatic insertion, AF amplification, and switching in space-constrained SMT applications demanding tight gain binning and JEDEC-qualified robustness.
FAQ
What is the maximum continuous collector current for BC858C-7-F?
The maximum continuous collector current is −100 mA at TA = +25°C, derated linearly above 25°C per the 357 °C/W RθJA value. At 85°C ambient, the usable IC drops to approximately −65 mA to maintain junction temperature below 150°C.
Is BC858C-7-F pin-compatible with BC848C?
Yes-BC858C-7-F (PNP) and BC848C (NPN) share identical SOT23 pinout (E-B-C top view), enabling complementary pair usage in push-pull amplifier stages and differential switch designs without layout changes.
Does BC858C-7-F meet automotive qualification standards?
No-BC858C-7-F is qualified to JEDEC standards for high reliability but is not AEC-Q200 certified. For automotive use, Diodes offers the BC857CQ variant, which shares identical electrical specs but undergoes additional stress testing per AEC-Q200 Rev D.
What is the typical noise figure of BC858C-7-F in amplifier applications?
The typical noise figure is 2 dB at VCE = −5 V, IC = −200 µA, RS = 2 kΩ, f = 1 kHz, and ∆f = 200 Hz. This low noise performance makes it suitable for microphone pre-amplifiers and sensor signal conditioning where SNR > 50 dB is required.
BC858C-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 420 @ 2mA, 5V
- Power - Max:
- 300 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
BC858C-7-F FAQ
1.How can I place an order for BC858C-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BC858C-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC858C-7-F reliable?
The price and inventory of BC858C-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858C-7-F is usually 5 days.
3.What payment methods are accepted for BC858C-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858C-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC858C-7-F?
BC858C-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC858C-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC858C-7-F?
For technical support, including BC858C-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858C-7-F requirements.
6.How does Aetrix verify that BC858C-7-F is sourced from the original manufacturer or authorized distributors?
All BC858C-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858C-7-F meets industry standards.
7.What is the process for return or replacement of BC858C-7-F?
All BC858C-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BC858C-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC858C-7-F part is unused and in its original packaging.
Return procedure for BC858C-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC858C-7-F Tags
-
MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
onsemi
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
onsemi
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