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onsemi BC858CLT1

Part No.:
BC858CLT1
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
-
Datasheet:
AetrixBC858CLT1.pdf
Description:
TRANS PNP 30V 100MA SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,675

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Product details

Overview

BC858CLT1 from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for −30 V VCEO, −100 mA IC continuous, 100 MHz fT, and 420–800 hFE (at IC = −2.0 mA), used in low-voltage switching and linear amplification circuits such as level shifters, current mirrors, and discrete logic interfaces.

For engineers reviewing the BC858CLT1 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal limits, switching timing, noise performance, and validated alternative parts - all specific to the BC858CLT1 variant within the BC856ALT1G Series.

Technical Context

The BC858CLT1 operates as a medium-speed PNP bipolar junction transistor optimized for general-purpose analog and digital switching. Its hFE range of 420–800 at IC = −2.0 mA enables high-current gain in low-base-drive applications, while its 100 MHz fT supports operation up to audio and low-RF frequencies.

It features −30 V VCEO and −30 V VCBO ratings, −5.0 V VEBO, and low saturation voltages (VCE(sat) ≤ −0.65 V at IC = −100 mA / IB = −5.0 mA), making it suitable for rail-to-rail signal inversion and active load configurations in 3.3 V/5 V systems.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −30 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in negative-rail circuits.
IC Continuous −100 mA - Max DC collector current; sets upper limit for steady-state load switching or amplification without thermal derating.
hFE 420–800 - DC current gain at IC = −2.0 mA / VCE = −5.0 V; enables low-base-current drive in high-gain amplifier stages.
fT 100 MHz - Current-gain bandwidth product; supports stable small-signal amplification up to mid-audio frequencies.
VCE(sat) ≤ −0.65 V at IC = −100 mA / IB = −5.0 mA - Low saturation voltage ensures minimal power loss and heat generation in switch-mode operation.
NF 10 dB at IC = −0.2 mA / VCE = −5.0 V - Noise figure suitable for low-level signal amplification in sensor front-ends and audio preamps.
PD (FR-5) 225 mW - Max power dissipation on standard FR-5 PCB; requires thermal derating above 25°C (1.8 mW/°C).

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm, 3-pin, lead-free and RoHS compliant. Pin configuration follows Style 6 per onsemi mechanical drawing: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Pin/Terminal Circuit Role Design Meaning
1 (Base) Control input Receives base current to bias transistor into active or saturation region; polarity-sensitive for PNP turn-on (negative current relative to emitter).
2 (Emitter) Reference terminal Typically connected to higher potential (e.g., VCC) in PNP configurations; serves as current source reference and thermal anchor point.
3 (Collector) Output terminal Delivers amplified or switched current to load; reverse-biased with respect to emitter during normal operation.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood and infotainment modules.
Pb-free, Halogen-free/BFR-free Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity - supports lead-free reflow assembly.
Low VBE(on) −0.75 V typical at IC = −10 mA - reduces base drive requirements and improves efficiency in battery-powered circuits.
Fast switching tr = 25 ns, tf = 40 ns - enables clean digital transitions in clock buffers and pulse generators up to ~10 MHz.
Low Cob 4.5 pF max at VCB = −10 V - minimizes Miller effect and improves high-frequency stability in amplifier feedback paths.

Applications

Level Shifting Current Mirror

Use Scenario: Translating logic signals between 5 V and 3.3 V domains in mixed-supply microcontroller interfaces.

IC Role / Device Role / Timing Role: PNP switch configured in emitter-follower or common-emitter inverter topology to invert and shift voltage levels.

Use Value: −30 V VCEO and −100 mA IC ensure robust operation across both rails; low VCE(sat) preserves output swing margin.

Use Scenario: Matching current sources in precision analog ICs, sensor biasing networks, or op-amp input stages.

IC Role / Device Role / Timing Role: Active component in two-transistor current mirror where matched hFE and VBE characteristics enable <1% current error.

Use Value: Tight hFE spread (420–800) and low VBE(on) variation support accurate mirroring at sub-mA bias currents.

Discrete Logic Inverter Load Switch

Use Scenario: Implementing NOT gates or Schmitt-trigger inputs in legacy TTL/CMOS-compatible control logic.

IC Role / Device Role / Timing Role: Saturated PNP switch driving pull-up loads; fast tr/tf ensures clean edge integrity.

Use Value: 25 ns rise time and 40 ns fall time meet timing budgets for 10 MHz digital control signals; low Cob prevents signal coupling.

Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, LEDs) in portable electronics.

IC Role / Device Role / Timing Role: High-side switch controlling current flow from positive supply to load; base driven by MCU GPIO.

Use Value: −0.65 V VCE(sat) at −100 mA limits conduction loss to <65 mW; SOT-23 footprint saves board space vs. larger packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC857CLT1G VCEO = −45 V, hFE = 420–800, same SOT-23 package and pinout Higher voltage rating allows use in 12 V systems where BC858CLT1 would be marginal Select when VCE stress exceeds −30 V but identical gain and speed are required
BC858BLT1G hFE = 220–475, otherwise identical ratings and package Lower gain range suits applications needing predictable moderate current amplification without high-beta variability Choose for cost-sensitive designs where tighter hFE tolerance and reduced gain spread improve production yield

Compared with BC858CLT1, BC857CLT1G offers higher voltage capability at no layout or drive change, while BC858BLT1G trades peak gain for improved hFE consistency - enabling design flexibility across voltage, gain, and manufacturing variance requirements.

Availability

BC858CLT1 is available at Aetrix Electronics and suitable for industrial control interfaces, automotive body electronics, and consumer power management requiring stable component supply and long-term manufacturability.

Supply support for BC858CLT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The BC858CLT1 belongs to the BC856ALT1G Series of general-purpose PNP transistors designed for cost-effective, reliable switching and amplification in space-constrained, high-volume applications.

FAQ

What is the maximum collector-emitter voltage rating for BC858CLT1?

The BC858CLT1 has a maximum collector-emitter voltage (VCEO) rating of −30 V at TA = 25°C. This rating applies under continuous DC conditions and must be derated at elevated ambient temperatures per the thermal characteristics table in the official onsemi datasheet. Exceeding −30 V risks permanent breakdown of the BC858CLT1 junction.

Is BC858CLT1 RoHS compliant and lead-free?

Yes, BC858CLT1 is RoHS compliant and lead-free, as confirmed by onsemi's marking "G" suffix and documentation in the BC856ALT1G Series datasheet. It meets EU Directive 2011/65/EU and is halogen-free/BFR-free, supporting Pb-free reflow soldering processes without exemption.

What is the DC current gain (hFE) range for BC858CLT1?

The BC858CLT1 exhibits an hFE range of 420 to 800 when tested at IC = −2.0 mA and VCE = −5.0 V, per the Electrical Characteristics table. This high-gain bin ('C' suffix) distinguishes BC858CLT1 from 'A' (125–250) and 'B' (220–475) variants in the same family.

Does BC858CLT1 have automotive qualification?

Yes, BC858CLT1 is AEC-Q101 qualified and PPAP capable, as part of the BC856ALT1G Series. This certification covers stress tests including temperature cycling, high-temperature reverse bias, and electrostatic discharge - validating BC858CLT1 for use in automotive cabin and chassis applications.

What is the thermal resistance (RJA) of BC858CLT1 on FR-5 board?

The BC858CLT1 has a junction-to-ambient thermal resistance (RJA) of 556°C/W when mounted on a standard FR-5 PCB (1.0 × 0.75 × 0.062 in). This value assumes no copper pour or thermal vias; adding thermal relief or ground planes can significantly reduce effective RJA in actual BC858CLT1 layouts.

BC858CLT1 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
*
Package/Case:
-
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

BC858CLT1 FAQ

1.How can I place an order for BC858CLT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC858CLT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC858CLT1 reliable?

The price and inventory of BC858CLT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858CLT1 is usually 5 days.

3.What payment methods are accepted for BC858CLT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858CLT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC858CLT1?

BC858CLT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC858CLT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC858CLT1?

For technical support, including BC858CLT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858CLT1 requirements.

6.How does Aetrix verify that BC858CLT1 is sourced from the original manufacturer or authorized distributors?

All BC858CLT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858CLT1 meets industry standards.

7.What is the process for return or replacement of BC858CLT1?

All BC858CLT1 units undergo pre-shipment inspection (PSI). If there is an issue with BC858CLT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC858CLT1 part is unused and in its original packaging.

Return procedure for BC858CLT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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