Diodes Incorporated BC858CW-7-F

Overview

BC858CW-7-F from Diodes Incorporated is a PNP small-signal transistor in SOT323 package, rated for V_CEO = −30 V, I_C = −100 mA, and h_FE = 420–800 (Group C), optimized for switching and audio-frequency amplification in space-constrained PCBs.

For engineers reviewing the BC858CW-7-F datasheet, BC858CW-7-F pinout, BC858CW-7-F application, or BC858CW-7-F equivalent, key selection criteria include guaranteed h_FE group C performance at −2 mA/−5 V, low V_CE(sat) ≤ −300 mV at −10 mA/−0.5 mA drive, and JEDEC-qualified reliability for industrial ambient operation up to +150°C.

Technical Context

This device operates as a discrete PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures. Its DC current gain is binned into Group C (h_FE = 420–800) at V_CE = −5 V and I_C = −2 mA, and it delivers f_T ≥ 100 MHz under V_CE = −5 V, I_C = −10 mA conditions.

Thermal design relies on R_θJA = 625°C/W (on 1 oz FR4, still air), and absolute maximum ratings include V_CBO = −30 V, V_EBO = −5.0 V, and P_D = 200 mW - all specified per JEDEC standards and validated for high-reliability operation.

Key Specifications

Pinout & Package

Package: SOT323 - surface-mount plastic package with matte tin-plated leads, moisture sensitivity level 1, weight ≈ 0.006 g, UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with BC857CW-7-F and MMBT3906LT1G, BC858CW-7-F offers the lowest V_CEO but highest guaranteed h_FE range (420–800), making it optimal for gain-stable AF amplification where voltage headroom is constrained to −30 V.

Availability

BC858CW-7-F is available at Aetrix Electronics and suitable for audio pre-amplifier stages, low-voltage switch drivers, level-shifting interfaces, and discrete logic inverters requiring stable component supply and JEDEC-qualified reliability.

Supply support for BC858CW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The BC856AW–BC858CW series belongs to Diodes' small-signal transistor product line, designed specifically for high-volume, space-constrained switching and amplification applications in consumer, industrial, and automotive-qualified systems.

FAQ

What is the exact h_FE range guaranteed for BC858CW-7-F?

BC858CW-7-F is binned to Group C, guaranteeing h_FE = 420–800 at V_CE = −5 V and I_C = −2 mA. This specification is verified per DS30251 Rev. 12–2 and applies across the full operating temperature range of −55°C to +150°C.

Is BC858CW-7-F suitable for automotive applications?

No - BC858CW-7-F is a standard-grade part qualified to JEDEC reliability standards but not AEC-Q101. For automotive use, Diodes offers the Q-suffix variant BC858CWQ-7-F, which is PPAP-capable and manufactured in IATF 16949-certified facilities.

What is the maximum allowable continuous collector current at +125°C ambient?

At T_A = +125°C, derating per Figure 1 reduces maximum continuous I_C to approximately −60 mA. This is calculated from the 200 mW P_D limit and R_θJA = 625°C/W, assuming junction temperature remains ≤ +150°C.

Does BC858CW-7-F have a built-in ESD protection diode?

No - BC858CW-7-F is a bare-die PNP transistor without integrated ESD protection. External protection (e.g., series resistors or TVS diodes) is recommended for handling or board-level ESD events exceeding ±2 kV HBM.