Nexperia USA Inc. BC858W,115

Overview

BC858W,115 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −30 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 125–800 at V_CE = −5 V, I_C = −2 mA. It serves as a low-voltage, low-current switching or amplification device in compact consumer and industrial signal-path circuits.

For engineers reviewing the BC858W,115 datasheet, BC858W,115 pinout, BC858W,115 application, or BC858W,115 equivalent, key selection criteria include its −30 V collector-emitter breakdown voltage, SOT323 thermal resistance (625 K/W), base-emitter saturation voltage (−850 mV max at I_C = −100 mA), and compatibility with reflow-soldered high-density PCB layouts.

Technical Context

The BC858W operates as a silicon PNP BJT with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its h_FE range (125–800) supports both precision biasing and robust digital on/off control across temperature (−65 °C to +150 °C).

It features low leakage (I_CBO ≤ −4 µA at T_j = 150 °C), tight V_BE(sat) (−850 mV max), and f_T = 100 MHz - enabling use in audio preamps, logic-level translators, and low-power sensor interface stages where gain stability and fast turn-off are required.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.8 mm footprint, 0.4 mm pitch, 0.9 mm height; optimized for automated placement and reflow soldering on high-density PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC858W,115, BC857W offers higher voltage tolerance while maintaining identical gain and thermal behavior, whereas BC848W provides functional complementarity in NPN configurations - both share SOT323 mounting and reflow profiles, simplifying layout reuse.

Availability

BC858W,115 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, audio pre-amplifier stages, and power supply enable switches requiring stable component supply in high-volume SMT manufacturing.

Supply support for BC858W,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial-standard components.

The BC858W belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained applications demanding consistent gain, low saturation voltage, and robust SMT manufacturability.

FAQ

What is the maximum operating temperature for BC858W,115?

The BC858W,115 has a maximum junction temperature (T_j) of 150 °C and storage temperature range of −65 °C to +150 °C. Its thermal resistance is 625 K/W on standard FR4 PCB, so continuous operation at full −100 mA load requires ambient temperature derating above 25 °C to stay within safe T_j limits.

Does BC858W,115 support lead-free reflow soldering?

Yes - BC858W,115 is qualified for lead-free reflow soldering per JEDEC J-STD-020. The SOT323 package uses matte tin termination and withstands peak temperatures up to 260 °C for 30 seconds. Recommended reflow profile matches IPC/JEDEC J-STD-020 Class 3 guidelines.

How does BC858W,115 differ from BC856W and BC857W?

BC858W has V_CEO = −30 V, BC857W is −45 V, and BC856W is −65 V - all share SOT323 package and h_FE range (125–800). The BC858W is optimized for lower-voltage systems (≤3.3 V/5 V rails), offering tighter V_CE(sat) and lower leakage than earlier variants at reduced voltage rating.

Can BC858W,115 be used in linear amplifier applications?

Yes - with h_FE = 125–800, f_T = 100 MHz, and NF = 2 dB at 1 kHz, BC858W,115 supports low-distortion small-signal amplification. Designers must maintain V_CE ≥ −5 V and I_C ≤ −20 mA for optimal linearity, using emitter degeneration to stabilize bias point against temperature drift.