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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC858W,135

Name: BC858W,135
Brand: Nexperia USA Inc.
SKU: BC858W,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC858W,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC858W,135.pdf

Description:: TRANS PNP 30V 0.1A SOT-323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC858W,135 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −30 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 125–800 at V_CE = −5 V and I_C = −2 mA. It serves as a low-voltage, low-current switching or amplification device in compact consumer and industrial signal-path circuits.

For engineers reviewing the BC858W,135 datasheet, BC858W,135 pinout, BC858W,135 application, or BC858W,135 equivalent, key selection criteria include its −30 V collector-emitter breakdown voltage, SOT323 thermal resistance (625 K/W), base-emitter saturation voltage (−850 mV max at I_C = −100 mA), and compatibility with reflow-soldered high-density PCB layouts.

Technical Context

The BC858W,135 operates as a silicon PNP BJT with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its h_FE range (125–800) supports both precision biasing and robust digital on/off control across temperature (−65 °C to 150 °C).

It features a maximum power dissipation of 200 mW at T_amb ≤ 25 °C on FR4 PCB, with V_CE(sat) ≤ −600 mV at I_C = −100 mA / I_B = −5 mA and f_T = 100 MHz - enabling use in audio preamps, level shifters, and low-speed logic interface stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum safe collector-emitter voltage with open base; defines upper rail limit in PNP switch designs.
I_C	−100 mA: Continuous DC collector current rating; sets load-driving capability in active or saturated mode.
h_FE	125–800 at V_CE = −5 V, I_C = −2 mA: Wide DC current gain range enables stable bias design across process variation.
V_CE(sat)	≤ −600 mV at I_C = −100 mA, I_B = −5 mA: Low saturation voltage minimizes power loss and heating in switching applications.
R_th(j-a)	625 K/W: Junction-to-ambient thermal resistance on standard FR4 PCB; informs derating above 25 °C ambient.
f_T	100 MHz: Transition frequency at V_CE = −5 V, I_C = −10 mA; supports audio-band amplification and low-MHz digital signal conditioning.

Pinout & Package

SOT323 (SC-70) surface-mount plastic package: 1.35 mm × 1.15 mm footprint, 0.95 mm height, 3-terminal configuration with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Current-controlled input node; requires external resistor bias network to set operating point in active or saturation region.
2	Emitter (E)	Common terminal for PNP current flow; typically tied to higher potential rail in switching configurations.
3	Collector (C)	Output current terminal; sinks current from load to emitter when biased on; connects to load return path in common-emitter topology.

Key Features

Feature	Design Value
Low-voltage PNP switching	Rated for −30 V V_CEO, suitable for 3.3 V/5 V rail-referenced logic-level interfaces and battery-powered signal routing.
High h_FE consistency	125–800 gain range ensures reliable DC bias stability across production lots without individual trimming.
Thermally efficient SMT package	SOT323 footprint delivers 625 K/W R_th(j-a) on standard FR4, supporting >150 °C junction operation in space-constrained layouts.
Low V_BE(sat)	≤ −850 mV at I_C = −100 mA enables fast turn-on with minimal base drive power in high-duty-cycle switches.

Applications

Audio Signal Amplifier

Logic-Level Translator

Use Scenario: Amplifying microphone or sensor output signals in portable audio devices before ADC sampling.

IC Role / Device Role / Timing Role: PNP common-emitter amplifier stage providing 20–40 dB voltage gain with low noise figure (2–10 dB at 1 kHz).

Use Value: High h_FE and low V_CE(sat) maintain linearity and efficiency at supply voltages down to 3.3 V while minimizing quiescent current draw.

Use Scenario: Converting 1.8 V CMOS logic outputs to 5 V TTL-compatible levels in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: Single-transistor level shifter using emitter-follower or common-base configuration for bidirectional voltage translation.

Use Value: −30 V V_CEO and 100 MHz f_T support clean edge integrity up to 10 MHz with sub-100 ns propagation delay.

LED Current Switch

Power Rail Monitor

Use Scenario: Driving indicator LEDs in wearables and IoT nodes where board area and power budget are constrained.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling LED anode current from a microcontroller GPIO pin.

Use Value: −600 mV V_CE(sat) limits conduction loss to <1 mW per LED at 20 mA, extending battery life in always-on status indicators.

Use Scenario: Detecting undervoltage conditions on 3.3 V or 5 V system rails to trigger reset or warning signals.

IC Role / Device Role / Timing Role: Discrete comparator front-end where BC858W,135 biases a reference zener and drives a latch or MCU interrupt pin.

Use Value: Tight V_(BR)CEO tolerance (−30 V ±0%) and low I_CBO (<4 µA at 150 °C) ensure stable trip-point accuracy over temperature and lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857W,135	V_CEO = −45 V; h_FE = 125–800; same SOT323 package and pinout	Higher voltage margin allows use in 12 V automotive body-control modules where BC858W,135 would be marginal	Select BC857W,135 when system rail exceeds 3.3 V/5 V and transient spikes approach −40 V.
MMBT3906LT1G	V_CEO = −40 V; h_FE = 100–300; SOT23 package (larger footprint, lower thermal resistance)	SOT23 offers better thermal performance (R_th(j-a) ≈ 450 K/W) but occupies ~2.5× more PCB area than SOT323	Choose MMBT3906LT1G for thermally demanding 100 mA continuous loads where board space permits larger package.

Compared with BC858W,135, BC857W,135 provides 15 V higher V_CEO headroom at identical gain and footprint, while MMBT3906LT1G trades miniaturization for thermal robustness and narrower h_FE spread - making BC858W,135 optimal for ultra-compact, cost-sensitive 3.3 V signal-path designs.

Availability

BC858W,135 is available at Aetrix Electronics and suitable for audio preamplifiers, logic-level translators, LED current switches, and power rail monitors requiring stable component supply in high-volume consumer and industrial production.

Supply support for BC858W,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial-standard components.

The BC858W,135 belongs to Nexperia's BC856W/BC857W/BC858W series of general-purpose PNP transistors designed specifically for space-constrained, low-power signal conditioning and switching in consumer, computing, and industrial electronics.

FAQ

What is the maximum allowable junction temperature for BC858W,135?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent parametric shift or failure. Derating is required above 25 °C ambient per the 625 K/W thermal resistance - e.g., maximum continuous I_C drops to ~60 mA at 70 °C ambient.

Can BC858W,135 replace BC857W,135 in existing designs?

No direct drop-in replacement: BC858W,135 has lower V_CEO (−30 V vs. −45 V) and identical h_FE range, but reduced voltage margin may cause premature breakdown in circuits exposed to >30 V transients. Verify worst-case V_CE stress under all operating and fault conditions before substitution.

What is the typical noise figure of BC858W,135 in small-signal amplification?

The noise figure is 2–10 dB at I_C = −200 µA, V_CE = −5 V, R_S = 2 kΩ, f = 1 kHz, and bandwidth = 200 Hz. This makes it suitable for low-frequency sensor amplification where sub-10 dB NF is acceptable, but not for RF or high-fidelity audio front-ends requiring <1 dB NF.

Does BC858W,135 have automotive qualification?

No. BC858W,135 is not AEC-Q101 qualified and lacks automotive-specific testing, screening, or reliability data. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use only in consumer, industrial, or computing applications unless independently validated for automotive environments.

BC858W,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 125 @ 2mA, 5V

Power - Max:: 200 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

BC858W,135 FAQ

1.How can I place an order for BC858W,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC858W,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC858W,135 reliable?

The price and inventory of BC858W,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858W,135 is usually 5 days.

3.What payment methods are accepted for BC858W,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858W,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC858W,135?

BC858W,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC858W,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC858W,135?

For technical support, including BC858W,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858W,135 requirements.

6.How does Aetrix verify that BC858W,135 is sourced from the original manufacturer or authorized distributors?

All BC858W,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858W,135 meets industry standards.

7.What is the process for return or replacement of BC858W,135?

All BC858W,135 units undergo pre-shipment inspection (PSI). If there is an issue with BC858W,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC858W,135 part is unused and in its original packaging.

Return procedure for BC858W,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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