Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi BC859BLT1G

Part No.:
BC859BLT1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC859BLT1G.pdf
Description:
TRANS PNP 30V 0.1A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,573

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC859BLT1G from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for VCEO = −30 V, IC = −100 mA continuous, and hFE = 220–475 (at IC = −2 mA, VCE = −5 V). It delivers low VCE(sat) of −0.3 V (IC = −10 mA, IB = −0.5 mA) and fT = 100 MHz, enabling use in compact DC amplification and switching circuits in power management subsystems.

For engineers reviewing the BC859BLT1G datasheet, pinout, applications, or equivalent options, key selection considerations include its −30 V VCEO, SOT-23 footprint compatibility, AEC-Q101 qualification for automotive-grade reliability, and verified noise figure of 4.0 dB at 1 kHz - critical for low-noise biasing and signal conditioning stages.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined safe operating area (SOA) limits up to −100 mA and −45 V under pulsed conditions. Its base-emitter junction exhibits a temperature coefficient of −2.2 mV/°C and VBE(on) = −0.75 V at IC = −10 mA, supporting stable bias design across −55°C to +150°C.

Small-signal behavior is characterized by Cob = 4.5 pF at VCB = −10 V and fT = 100 MHz, confirming suitability for audio-frequency amplification and moderate-speed switching (tr = 25 ns, tf = 40 ns). The device meets Pb-free, RoHS, and halogen-free requirements per onsemi's manufacturing standards.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO−30 V - Maximum collector-emitter voltage before breakdown; defines safe DC rail headroom in PNP switch or amplifier stages
IC Continuous−100 mA - Continuous collector current rating; sets upper limit for steady-state load driving capability
hFE220–475 - DC current gain range at IC = −2 mA; enables predictable base drive sizing for switching or linear operation
VCE(sat)−0.3 V (IC/IB = 20) - Low saturation voltage minimizes conduction loss in high-efficiency PNP switch applications
fT100 MHz - Unity-gain frequency confirms usable bandwidth for audio and low-MHz signal amplification
NF4.0 dB @ 1 kHz - Verified noise figure supports low-noise preamplifier and sensor interface designs
RJA556 °C/W (FR-5 board) - Thermal resistance informs heatsinking needs for sustained 100 mA operation

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 mm × 1.30 mm × 1.00 mm body, 1.90 mm lead pitch. RoHS-compliant, Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
1BaseControl terminal; requires current-limited drive to achieve specified hFE and switching speed
2EmitterCurrent source terminal; connected to higher potential rail in PNP configuration
3CollectorOutput terminal; sinks current to load when biased on; polarity must match PNP topology

Key Features

Feature Design Value
AEC-Q101 qualifiedValidated for automotive applications including engine control modules and body electronics requiring extended temperature and reliability compliance
VCEO = −30 VEnables direct replacement of legacy BC559 in 24 V industrial control systems without derating
Low VCE(sat)Reduces power dissipation below 3 mW at 10 mA load, improving thermal margin in dense PCB layouts
4.0 dB noise figureSupports precision analog front-ends in sensor signal chains where emitter-follower buffering is required
SOT-23 footprintEnsures drop-in compatibility with existing pick-and-place tooling and reflow profiles used for BC846–BC859 family

Applications

LED Driver Circuit Level-Shifting Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins in automotive dashboards.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to 5 V rail; base driven by inverted logic signal.

Use Value: VCE(sat) ≤ −0.3 V ensures <10 mW dissipation per LED channel, eliminating need for external heat sinking in space-constrained clusters.

Use Scenario: Translating 1.8 V logic outputs to 5 V domains in mixed-voltage MCU peripherals.

IC Role / Device Role / Timing Role: Emitter-follower level shifter with grounded emitter, base driven by low-VOH source.

Use Value: hFE ≥ 220 guarantees sufficient current sourcing into 10 kΩ pull-up loads while maintaining <100 ns propagation delay.

Low-Noise Sensor Bias Power Supply Enable Switch

Use Scenario: Providing stable bias current to piezoresistive pressure sensor bridges in medical instrumentation.

IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor; operates in active region with minimal thermal drift.

Use Value: NF = 4.0 dB and −2.2 mV/°C VBE TC enable sub-μV output drift over 0–50°C ambient range.

Use Scenario: Enabling/disabling 12 V auxiliary rails in industrial PLC I/O modules via microcontroller command.

IC Role / Device Role / Timing Role: High-side switch controlling PMOS gate drive or directly sourcing load current up to 100 mA.

Use Value: −30 V VCEO and −100 mA IC rating allow direct control of 12 V/100 mA loads without external driver staging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC859CLT1GHigher hFE (420–800), same VCEO/IC ratings and SOT-23 packageBetter suited for low-base-drive applications like battery-powered sensor nodesSelect when minimizing base current is critical and tighter hFE tolerance is acceptable
MMBT3906LT1GSame VCEO (−40 V), lower hFE (100–300), identical SOT-23 footprint and pinoutWidely available alternative with broader distributor stock but less gain consistencyChoose for cost-sensitive designs where gain variation ≤3× is tolerable and AEC-Q101 is not required

Compared with BC859BLT1G, BC859CLT1G offers higher gain for ultra-low-drive scenarios, while MMBT3906LT1G provides broader supply-chain availability at the expense of AEC-Q101 qualification and tighter hFE distribution - making BC859BLT1G optimal for automotive-qualified, gain-stable PNP switching.

Availability

BC859BLT1G is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor interfaces, and consumer power management systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BC859BLT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The BC859BLT1G belongs to onsemi's BC856ALT1G Series of general-purpose PNP transistors, designed specifically for high-reliability, space-constrained switching and amplification in automotive and industrial control applications.

FAQ

What is the maximum collector-emitter voltage rating for BC859BLT1G?

The BC859BLT1G has a maximum collector-emitter voltage (VCEO) rating of −30 V at TA = 25°C. This rating applies under standard test conditions with IC = −10 mA and defines the absolute maximum reverse-biased voltage the transistor can withstand before breakdown. Exceeding this value risks permanent damage and is not recommended in any design using BC859BLT1G.

Is BC859BLT1G suitable for automotive applications?

Yes, BC859BLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications including body electronics, lighting control, and power distribution modules. Its guaranteed operation from −55°C to +150°C, Pb-free/RoHS compliance, and validated reliability testing per AEC-Q101 ensure robust performance in vehicle environments where BC859BLT1G is deployed.

What is the DC current gain (hFE) range for BC859BLT1G?

The BC859BLT1G exhibits a DC current gain (hFE) range of 220 to 475 when tested at IC = −2.0 mA and VCE = −5.0 V. This gain bin ('B' suffix) is confirmed in the official onsemi datasheet and distinguishes BC859BLT1G from 'A' (125–250) and 'C' (420–800) variants within the same family.

Does BC859BLT1G have the same pinout as other SOT-23 PNP transistors?

Yes, BC859BLT1G uses Style 6 pinout per onsemi's mechanical drawings: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches industry-standard SOT-23 PNP configurations including MMBT3906LT1G and BC857BLT1G, enabling layout reuse and simplified PCB design when BC859BLT1G is substituted within compatible gain/voltage classes.

What is the thermal resistance (RJA) of BC859BLT1G on FR-5 board?

The BC859BLT1G has a junction-to-ambient thermal resistance (RJA) of 556°C/W when mounted on a standard FR-5 PCB (1.0 × 0.75 × 0.062 in) at TA = 25°C. This value is critical for calculating junction temperature rise under load and confirms that BC859BLT1G can dissipate up to 225 mW continuously before exceeding its 150°C maximum junction temperature limit.

BC859BLT1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Power - Max:
300 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)

BC859BLT1G FAQ

1.How can I place an order for BC859BLT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for BC859BLT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC859BLT1G reliable?

The price and inventory of BC859BLT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC859BLT1G is usually 5 days.

3.What payment methods are accepted for BC859BLT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC859BLT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC859BLT1G?

BC859BLT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC859BLT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC859BLT1G?

For technical support, including BC859BLT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC859BLT1G requirements.

6.How does Aetrix verify that BC859BLT1G is sourced from the original manufacturer or authorized distributors?

All BC859BLT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC859BLT1G meets industry standards.

7.What is the process for return or replacement of BC859BLT1G?

All BC859BLT1G units undergo pre-shipment inspection (PSI). If there is an issue with BC859BLT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC859BLT1G part is unused and in its original packaging.

Return procedure for BC859BLT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC859BLT1G Tags

  • BC859BLT1G
  • BC859BLT1G PDF
  • BC859BLT1G Datasheet
  • BC859BLT1G Specifications
  • BC859BLT1G Images
  • onsemi
  • onsemi BC859BLT1G
  • Buy BC859BLT1G
  • BC859BLT1G Price
  • BC859BLT1G Distributor
  • BC859BLT1G Supplier
  • BC859BLT1G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER