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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC859C,215

Name: BC859C,215
Brand: Nexperia USA Inc.
SKU: BC859C,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC859C,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BC859C,215.pdf

Description:: TRANS PNP 30V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC859C,215 from Nexperia is a PNP general-purpose bipolar junction transistor (BJT) in SOT23 package, rated for −45 V V_CEO, −100 mA I_C, and 250 mW P_tot, with DC current gain (h_FE) of 420–800 at −2 mA I_C/−5 V V_CE. It serves as an amplifying or switching device in low-noise audio input stages and signal conditioning circuits.

For engineers reviewing the BC859C,215 datasheet, BC859C,215 pinout, BC859C,215 application, or BC859C,215 equivalent, key selection criteria include guaranteed h_FE binning (C-grade), low V_CEsat (≤−300 mV @ −10 mA/−0.5 mA), noise figure ≤4 dB at 1 kHz, SOT23 thermal resistance (500 K/W), and PNP complementarity to BC849/BC850.

Technical Context

This transistor operates in active or saturation mode with fixed-emitter biasing topology. Its h_FE variation is tightly controlled across temperature (−2 mV/K V_BE drift) and collector current (420–800 over −0.1 to −100 mA range), enabling stable DC biasing in discrete amplifier chains.

The device exhibits low parasitic capacitance (C_c = 4.5 pF, C_e = 10 pF) and f_T ≥100 MHz, supporting audio-frequency amplification up to ~100 kHz with minimal phase shift and distortion in common-emitter configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V: Maximum safe collector-emitter voltage before breakdown in open-base configuration.
I_C (DC)	−100 mA: Continuous collector current rating defining linear/saturation operating envelope.
h_FE	420–800 @ −2 mA/−5 V: Guaranteed DC current gain range enabling predictable bias point design.
V_CEsat	≤−300 mV @ −10 mA/−0.5 mA: Low saturation voltage ensures minimal power loss in switching applications.
P_tot	250 mW @ T_amb ≤25 °C: Power dissipation limit dictating heatsinking requirements on FR4 PCB.
f_T	≥100 MHz: Transition frequency confirming suitability for audio-band amplification without gain roll-off.
Noise Figure	≤4 dB @ 1 kHz, 200 μA, 2 kΩ source: Quantified low-noise performance critical for preamplifier input stages.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with gull-wing leads; 1.3 mm × 2.9 mm footprint, 1.1 mm height, 0.95 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input terminal; requires series resistor to limit I_B and set operating point.
2	Emitter	Common reference terminal in common-emitter configuration; connected to higher potential in PNP operation.
3	Collector	Output current terminal; sinks current when base is forward-biased relative to emitter.

Key Features

Feature	Design Value
Guaranteed h_FE binning (C-grade)	420–800 ensures consistent gain matching across production lots for multi-stage amplifier designs.
Low V_CEsat	≤−300 mV at −10 mA enables efficient switching with <0.3 mW conduction loss in low-power logic interfaces.
Low noise figure	≤4 dB at 1 kHz supports high-fidelity audio signal amplification without audible hiss in microphone preamps.
SOT23 thermal resistance	R_th(j-a) = 500 K/W allows direct mounting on standard FR4 without thermal vias in ambient ≤70 °C environments.

Applications

Audio Input Amplifier

Level Shifting Interface

Use Scenario: First-stage amplification of electret microphone output signals in portable audio recorders.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology to provide 20–40 dB voltage gain with DC bias stabilization.

Use Value: 420–800 h_FE binning ensures repeatable gain across units; ≤4 dB noise figure preserves signal-to-noise ratio below 60 dB SPL.

Use Scenario: Converting 3.3 V logic outputs to −5 V control signals for analog switch enable inputs.

IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from −5 V rail to ground upon base activation.

Use Value: ≤−300 mV V_CEsat limits power dissipation to <3 mW at 10 mA, eliminating need for external heat management.

Current Mirror Reference

Discrete Logic Inverter

Use Scenario: Building matched current sources in analog sensor signal conditioning ICs with discrete front-ends.

IC Role / Device Role / Timing Role: One half of a PNP current mirror pair, biased at −2 mA to replicate reference current.

Use Value: Tight h_FE tolerance (±20%) and −2 mV/K V_BE drift ensure <2% current mismatch over −40 to +85 °C.

Use Scenario: Implementing non-inverting digital logic in legacy industrial controllers where CMOS inputs require pull-up compatibility.

IC Role / Device Role / Timing Role: PNP-based emitter-follower buffer driving 10 kΩ loads with rail-to-rail swing.

Use Value: 100 MHz f_T supports >100 kHz switching with <10 ns propagation delay, meeting TTL-compatible timing budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857C,215	V_CEO = −45 V (same), but h_FE = 420–800 at −10 mA (not −2 mA); slightly higher V_CEsat (−350 mV typical).	Optimized for higher-current switching (>10 mA), less ideal for low-I_C audio preamp biasing.	Select when operating above −5 mA collector current and lower V_CEsat is not critical.
MMBT3906LT1G	V_CEO = −40 V, h_FE = 100–300 (wider spread), R_th(j-a) = 400 K/W (better thermal performance).	Higher gain variation reduces predictability in precision bias networks; better for cost-sensitive switching.	Choose for non-critical switching where gain tolerance >±50% is acceptable and thermal margin is constrained.

Compared with BC859C,215, BC857C,215 trades tighter low-current h_FE control for higher-current optimization, while MMBT3906LT1G offers improved thermal resistance but sacrifices gain consistency-making BC859C,215 optimal for low-noise, low-I_C analog signal paths requiring repeatable DC bias.

Availability

BC859C,215 is available at Aetrix Electronics and suitable for audio input amplifiers, level-shifting interfaces, current mirror references, and discrete logic inverters requiring stable component supply and consistent h_FE binning.

Supply support for BC859C,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, formed in 2017 from the former NXP Standard Products division, specializing in high-volume, high-reliability components for automotive, industrial, and consumer markets.

The BC859C,215 belongs to Nexperia's BC85x PNP transistor family, engineered for low-noise, general-purpose amplification and switching in space-constrained PCB layouts where SOT23 footprint and guaranteed h_FE are critical.

FAQ

What is the maximum continuous collector current for BC859C,215?

The absolute maximum DC collector current (I_C) is −100 mA, as defined in the Limiting Values table under IEC 60134. Operation beyond this value risks permanent damage. Derating is required above 25 °C ambient per the 500 K/W thermal resistance specification.

Is BC859C,215 pin-compatible with BC849 or BC850?

No-BC859C,215 is a PNP transistor while BC849 and BC850 are NPN complements. They share identical SOT23 pinout (base/emitter/collector on pins 1/2/3), but polarity reversal means direct substitution requires circuit topology changes, including supply rail and bias network inversion.

Does BC859C,215 have a specified transition frequency (f_T)?

Yes-f_T is specified as ≥100 MHz at I_C = −10 mA and V_CE = −5 V. This confirms usable gain up to audio frequencies and limited RF capability, though it is not characterized for RF switching or oscillator use beyond 10 MHz.

What does the 'C' suffix indicate in BC859C,215?

The 'C' denotes the h_FE gain bin: 420–800 at −2 mA I_C and −5 V V_CE. This is distinct from 'B' grade (220–475). The '215' is Nexperia's internal package code for SOT23 tape-and-reel packaging with 3000 units per reel.

BC859C,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 420 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BC859C,215 FAQ

1.How can I place an order for BC859C,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC859C,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC859C,215 reliable?

The price and inventory of BC859C,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC859C,215 is usually 5 days.

3.What payment methods are accepted for BC859C,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC859C,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC859C,215?

BC859C,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC859C,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC859C,215?

For technical support, including BC859C,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC859C,215 requirements.

6.How does Aetrix verify that BC859C,215 is sourced from the original manufacturer or authorized distributors?

All BC859C,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC859C,215 meets industry standards.

7.What is the process for return or replacement of BC859C,215?

All BC859C,215 units undergo pre-shipment inspection (PSI). If there is an issue with BC859C,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC859C,215 part is unused and in its original packaging.

Return procedure for BC859C,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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