Nexperia USA Inc. BC860BW,115

Overview

BC860BW,115 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 package, rated for −45 V V_CEO, −50 V V_CBO, and −100 mA I_C, with DC current gain (h_FE) of 220–475 at −2 mA I_C, used in low-noise audio preamplifier stages of hi-fi amplifiers and tape recorders.

For engineers reviewing the BC860BW,115 datasheet, BC860BW,115 pinout, BC860BW,115 application, or BC860BW,115 equivalent, key selection criteria include guaranteed h_FE range, low noise figure (4 dB at 1 kHz), V_CEsat ≤ −650 mV at −100 mA, thermal resistance (625 K/W), and SOT323 footprint compatibility with space-constrained analog signal paths.

Technical Context

This PNP BJT operates in linear active and saturation regions, optimized for low-current analog amplification with specified noise performance across 10 Hz–15.7 kHz bandwidth. Its h_FE variation is characterized over −10 μA to −100 mA I_C at fixed V_CE = −5 V, supporting predictable biasing in emitter-follower and common-emitter configurations.

Thermal design relies on FR4 PCB mounting with R_{th j-a} = 625 K/W; maximum junction temperature is 150 °C. Cut-off leakage (I_CBO ≤ −15 nA at −30 V, T_j = 25 °C) ensures stable operation in high-impedance input stages.

Key Specifications

Pinout & Package

SOT323 plastic surface-mounted package (3 leads), dimensions: 2.2 mm × 1.35 mm × 0.95 mm max height; JEDEC MO-203AA / EIAJ SC-70 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC860B,115, BC860BW,115 adds wafer-level traceability without electrical trade-offs; versus MMBT3906LT1G, it offers superior V_CEO and tighter h_FE but requires SOT323 layout-critical for space-constrained audio signal chains.

Availability

BC860BW,115 is available at Aetrix Electronics and suitable for low-noise audio preamplifiers, industrial level-shifting interfaces, and compact oscillator circuits requiring stable component supply and long-term obsolescence management.

Supply support for BC860BW,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BC860BW,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for reliability and consistency in analog signal conditioning and low-power switching applications.

FAQ

Is BC860BW,115 RoHS compliant and lead-free?

Yes. BC860BW,115 is manufactured in compliance with EU RoHS Directive 2011/65/EU and is lead-free, with homogeneous lead content below 0.1 wt%. The SOT323 package uses matte tin (Sn) termination, qualified for standard Pb-free reflow profiles (JEDEC J-STD-020).

What is the maximum allowable power dissipation at 70 °C ambient?

At T_amb = 70 °C, derated power dissipation is 120 mW, calculated using P_tot(T_amb) = P_tot(25 °C) × (1 − (T_amb − 25)/R_{th j-a} × ΔT). With R_{th j-a} = 625 K/W and T_j(max) = 150 °C, the linear derating yields 200 mW × (1 − 45/625) ≈ 120 mW.

Does BC860BW,115 have an AEC-Q101 qualification certificate?

No. BC860BW,115 is not AEC-Q101 qualified. It is rated for industrial temperature range (−65 °C to +150 °C) but lacks the stress test documentation required for automotive qualification. For AEC-Q101 applications, consider Nexperia's BC860BQ series or consult official Nexperia automotive-grade alternatives.

Can BC860BW,115 replace BC857BW in existing designs?

Yes, with verification. BC857BW has V_CEO = −45 V and h_FE = 220–475 - identical to BC860BW,115 - and shares the same SOT323 package and pinout. Electrical characteristics match within datasheet tolerances; no layout or bias changes are needed for direct substitution.