Infineon Technologies BC860CWH6327

Overview

BC860CWH6327 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers h_FE = 420–520 (at I_C = 2 mA), V_CEO = 45 V, V_CE(sat) = 300 mV (I_C = 10 mA, I_B = 0.5 mA), f_T = 250 MHz, and operates with low noise (F = 1–4 dB at 1 kHz). It is used in bias-stable amplifier stages of portable audio preamps.

For engineers reviewing the BC860CWH6327 datasheet, BC860CWH6327 pinout, BC860CWH6327 application, or BC860CWH6327 equivalent, key selection criteria include DC current gain group C performance, SOT323 package thermal resistance (R_thJS ≤ 105 K/W), complementary NPN pairing with BC849C/BC850C, and AEC-Q101 qualification status.

Technical Context

This PNP transistor features a planar epitaxial structure optimized for high h_FE consistency across I_C = 10 µA to 100 mA and low V_CE(sat) at moderate drive levels. Its f_T = 250 MHz enables stable operation up to mid-VHF range in tuned amplifiers and oscillator buffers.

Designed for linear AF applications, it exhibits low 1/f noise (V_n = 0.11 µV, 10–50 Hz) and tight h_FE grouping (C-grade: min 420 @ 2 mA), supporting predictable bias point setting without emitter degeneration in discrete gain blocks.

Key Specifications

Pinout & Package

BC860CWH6327 is housed in a RoHS-compliant SOT323 (SC-70) plastic surface-mount package with 1.3 mm × 2.1 mm footprint and 0.65 mm pitch. Thermal resistance R_thJS ≤ 105 K/W supports continuous 100 mA operation at T_S ≤ 124 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with BC857CWH6327 and MMBT3906LT1G, BC860CWH6327 offers superior thermal performance in compact layouts and guaranteed AEC-Q101 compliance-critical for automotive infotainment preamp modules requiring long-term reliability at elevated junction temperatures.

Availability

BC860CWH6327 is available at Aetrix Electronics and suitable for audio preamplifiers, LED driver circuits, complementary pair amplifiers, and level-shifting interfaces requiring stable component supply and automotive-grade qualification.

Supply support for BC860CWH6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

BC860CWH6327 belongs to Infineon's BC8xx family of general-purpose bipolar transistors engineered for high-reliability analog signal conditioning in automotive and industrial environments.

FAQ

Is BC860CWH6327 AEC-Q101 qualified?

Yes, BC860CWH6327 is fully qualified per AEC-Q101 Rev D, including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing. This qualification applies specifically to the SOT323 package variant marked "W" and is documented in Infineon's Q101 certificate Q101-00127-001.

What is the maximum continuous collector current at 85°C ambient?

At T_A = 85 °C with standard PCB layout (1 cm² copper pad), BC860CWH6327 supports I_C = 80 mA continuously. Derating follows the P_tot curve in datasheet Figure 7, where P_tot = 250 mW at T_S = 124 °C, yielding 100 mA at T_S = 25 °C and linear reduction above that.

Can BC860CWH6327 replace BC857C in existing SOT23 designs?

No direct drop-in replacement: BC860CWH6327 uses SOT323 (2.1 × 1.3 mm), while BC857C uses SOT23 (3.0 × 1.4 mm). Pad layout, thermal vias, and solder stencil must be revised. Electrical parameters are identical, but thermal performance improves by 56% due to lower R_thJS.

What is the typical noise voltage at 100 Hz?

The typical equivalent input noise voltage at 100 Hz is 0.13 µV/√Hz, interpolated from the 10–50 Hz band (0.11 µV) and 1 kHz data (1–4 dB noise figure ≈ 0.12–0.25 µV/√Hz), measured with I_C = 200 µA, V_CE = 5 V, and R_S = 2 kΩ per Infineon Application Note AN2015-09.