Infineon Technologies BC860CWH6327XTSA1

Overview

BC860CWH6327XTSA1 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers high DC current gain (h_FE = 420–520 at I_C = 2 mA), low V_CE(sat) (≤300 mV at I_C = 10 mA, I_B = 0.5 mA), and low noise (F = 1–4 dB at 1 kHz) - enabling clean amplification in low-level analog signal paths such as microphone preamps and line drivers.

For engineers reviewing the BC860CWH6327XTSA1 datasheet, BC860CWH6327XTSA1 pinout, BC860CWH6327XTSA1 application, or BC860CWH6327XTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, SOT323 package thermal resistance (R_thJS ≤ 105 K/W), complementary NPN pairing with BC849C/BC850C, and guaranteed h_FE group C performance across temperature.

Technical Context

This transistor operates in linear active and saturation regions for analog amplification and switching functions. Its h_FE group C specification ensures minimum DC gain of 420 at I_C = 10 µA and 480 at I_C = 2 mA, supporting stable biasing in emitter-follower and common-emitter configurations. The device's f_T of 250 MHz enables reliable operation up to mid-VHF frequencies despite being optimized for AF use.

Thermal design is constrained by its SOT323 package, which provides R_thJS ≤ 105 K/W and P_tot = 250 mW at T_S ≤ 124 °C. Electrical robustness includes V_CEO = 30 V, V_CBO = 30 V, and V_EBO = 5 V - suitable for rail-to-rail signal handling in 3.3 V and 5 V systems with margin.

Key Specifications

Pinout & Package

BC860CWH6327XTSA1 is housed in a RoHS-compliant SOT323 plastic surface-mount package (3-pin, 1.3 mm × 2.1 mm footprint), optimized for automated assembly and thermal dissipation on standard FR-4 boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with BC850CTA and MMBT3906LT1G, BC860CWH6327XTSA1 offers superior low-noise performance and tighter h_FE control in the same SOT323 footprint - making it optimal for gain-critical, thermally constrained AF signal paths where PNP polarity is required.

Availability

BC860CWH6327XTSA1 is available at Aetrix Electronics and suitable for automotive infotainment modules, industrial sensor interfaces, and portable audio equipment requiring stable component supply and AEC-Q101 compliance.

Supply support for BC860CWH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BC860CWH6327XTSA1 belongs to Infineon's BC8xx family of general-purpose bipolar transistors - engineered for high-reliability analog signal conditioning and switching in automotive, industrial, and consumer applications where AEC-Q101 validation and consistent parametric performance are mandatory.

FAQ

Is BC860CWH6327XTSA1 pin-compatible with BC857C or BC858C?

No - BC860CWH6327XTSA1 uses the SOT323 package with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector. BC857C and BC858C variants are offered in SOT23 (same pinout) and TSFP-3/TSLP-3-1 (different pin mapping). Mechanical and thermal characteristics differ significantly between packages, so direct substitution requires layout revision and thermal revalidation.

What is the maximum continuous collector current at 100 °C ambient?

At T_A = 100 °C, derating applies: P_tot = 250 mW at T_S ≤ 124 °C implies usable I_C drops to approximately 60 mA (assuming V_CE ≈ 3 V and junction-to-ambient thermal path limits). Full 100 mA rating is only valid at T_A ≤ 55 °C with adequate PCB copper area.

Does this transistor support pulsed operation beyond its DC ratings?

Yes - pulse testing (t < 300 µs, duty cycle < 2%) permits peak I_C up to 200 mA. The permissible pulse load curve shows P_tot(max)/P_tot(DC) reaches 5× at t_p = 10 µs, enabling short-duration surge handling in protection or trigger circuits.

How does the noise performance compare between h_FE groups A, B, and C?

Noise figure is not binned by h_FE group; all BC860 variants specify F = 1–4 dB at 1 kHz. However, group C devices exhibit lower V_BE(sat) variation and tighter h_FE distribution - reducing gain-dependent noise modulation in cascaded stages and improving consistency across production lots.