Infineon Technologies BCP49E6327HTSA1

Overview

BCP49E6327HTSA1 from Infineon Technologies is an NPN silicon Darlington transistor in SOT-223 package, designed for general-purpose audio-frequency switching and amplification. It delivers 500 mA DC collector current, minimum h_FE of 2000 at 100 µA, V_CEO = 60 V, and operates up to 150 °C junction temperature-used in automotive lighting control and industrial relay drivers.

For engineers reviewing the BCP49E6327HTSA1 datasheet, BCP49E6327HTSA1 pinout, BCP49E6327HTSA1 application, or BCP49E6327HTSA1 equivalent, key selection criteria include guaranteed high-current gain across 100 µA–500 mA, AEC-Q101 qualification, thermal resistance ≤17 K/W, and RoHS-compliant SOT-223 packaging with exposed emitter-collector tab for heatsinking.

Technical Context

This Darlington pair integrates two NPN transistors in cascade to achieve ultra-high DC current gain (up to 10,000 at 100 mA), enabling low-base-drive control of moderate-power loads. Its V_CE(sat) ≤1 V at I_C = 100 mA / I_B = 0.1 mA ensures efficient switching with minimal conduction loss.

The device features a thermally optimized SOT-223 package with direct die-to-tab thermal path, supporting P_tot = 1.5 W at T_S = 124 °C. Electrical characteristics are fully specified from –65 °C to +150 °C, meeting AEC-Q101 stress test requirements for automotive under-hood applications.

Key Specifications

Pinout & Package

SOT-223 package with integrated heatsink tab (pin 3), standardized footprint (7.55 × 6.8 mm), and RoHS-compliant matte-tin plating. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter (tab), Pin 4 = Collector (dual-collector configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with BCP56-10T1G and ZTX951, BCP49E6327HTSA1 uniquely balances ultra-high gain (≥2000), dual-collector thermal robustness, and AEC-Q101 qualification-making it optimal for automotive-grade, low-base-drive, medium-power switching where reliability and thermal margin are critical.

Availability

BCP49E6327HTSA1 is available at Aetrix Electronics and suitable for automotive interior lighting control, industrial relay driver stages, DC motor speed regulators, and thermal cut-off protection circuits requiring stable component supply and long-term lifecycle support.

Supply support for BCP49E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BCP49 belongs to Infineon's high-reliability bipolar transistor family targeting automotive and industrial applications requiring AEC-Q101 qualification, extended temperature operation, and thermally robust packaging.

FAQ

Is BCP49E6327HTSA1 pin-compatible with BCP52 or BCP56?

Yes-BCP49E6327HTSA1 shares identical SOT-223 pinout (Base–Collector–Emitter–Collector) with BCP52 and BCP56 series. Pin 1 is Base, Pins 2 and 4 are Collector, and Pin 3 is Emitter tab. Mechanical footprint and solder pad layout match exactly per Infineon's package drawings.

What is the maximum allowable continuous power dissipation at 85°C ambient?

At T_A = 85 °C with standard 2-layer PCB (1 in² copper pour), P_tot is derated to ≈950 mW based on R_thJA ≈ 68 K/W. Full 1.5 W rating applies only when case temperature (T_S) is maintained at 124 °C via heatsink or large copper area.

Does BCP49E6327HTSA1 support pulse operation above 500 mA?

Yes-peak collector current I_CM is rated at 800 mA for pulse widths ≤300 µs with duty cycle ≤2%. This supports relay coil energization, solenoid actuation, and short-duration motor startup without thermal runaway.

Can this Darlington transistor replace a MOSFET in low-side switching applications?

No-it is an NPN Darlington intended for high-side or emitter-follower configurations. For low-side switching, its emitter-referenced output requires level-shifting base drive. A logic-level N-channel MOSFET (e.g., BSC010N04LS) is more appropriate for direct MCU-ground-switching use cases.