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Nexperia USA Inc. BCP53,115

Part No.:
BCP53,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBCP53,115.pdf
Description:
TRANS PNP 80V 1A SOT-223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,284

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Product details

Overview

BCP53,115 from Nexperia is a PNP medium-power bipolar junction transistor in SOT223 (SC-73) package, rated for −80 V VCEO, −1 A continuous collector current, and 1.35 W power dissipation with optimized thermal pad layout. It delivers hFE = 63–250 at IC = −150 mA and is engineered for high-side switching in linear voltage regulators and MOSFET driver stages.

For engineers reviewing the BCP53,115 datasheet, BCP53,115 pinout, BCP53,115 application, or BCP53,115 equivalent, this device is selected for stable DC gain across temperature, low VCE(sat) at moderate load currents, and robust thermal performance on FR4 PCBs with extended collector pad area.

Technical Context

The BCP53,115 operates as a single PNP silicon transistor with base-controlled current amplification. Its design emphasizes high DC current gain consistency across IC = −5 mA to −500 mA and stable VBE ≈ −1.0 V at IC = −500 mA, enabling predictable biasing in analog and power-switching topologies.

Thermal behavior is defined by three Rth(j-a) values (192 K/W to 93 K/W), directly tied to PCB copper area under the collector tab - confirming its role as a thermally aware discrete component requiring layout-aware derating per Figure 1.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −80 V: Maximum safe collector-emitter reverse voltage before breakdown; enables use in 48 V and higher DC bus switching.
IC (continuous) −1 A: Rated DC collector current; supports sustained load switching up to 1 A without forced cooling.
hFE 63–250 at VCE = −2 V, IC = −150 mA: Wide DC gain range ensures reliable base drive sizing across production lots.
VCE(sat) ≤ −0.5 V at IC = −500 mA, IB = −50 mA: Low saturation voltage minimizes conduction loss in high-side switch applications.
Ptot 1.35 W with 6 cm² collector pad: Highest power rating requires dedicated copper pour; enables >1 W operation without heatsink.
fT 145 MHz: Transition frequency supports stable operation up to mid-frequency switching (e.g., <5 MHz PWM drivers).
Rth(j-a) 93 K/W (6 cm² pad): Thermal resistance defines junction-to-ambient rise; 1.35 W dissipation yields ΔT ≈ 125 °C above ambient.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with 4 leads, 2.3 mm pitch, and integrated thermal pad on lead 2 and 4 (collector). Body dimensions: 6.5 mm × 3.5 mm × 1.65 mm. Collector leads are internally bonded to maximize heat transfer to PCB.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input; requires current-limited drive (IB ≤ −0.3 A peak) to avoid saturation delay or thermal stress.
2 Collector (C) Main power output terminal; electrically and thermally connected to exposed copper pad - must be soldered to ≥1 cm² PCB copper.
3 Emiter (E) Reference node for current flow; connects to higher-potential rail in high-side configuration (e.g., VIN).
4 Collector (C) Dual-collector configuration enhances thermal conduction and current handling; both pins must be routed to same net and copper pour.

Key Features

Feature Design Value
Three hFE variants BCP53 (63–250), BCP53-10 (63–160), BCP53-16 (100–250): Enables precise gain binning for consistent loop gain in regulator feedback paths.
High power dissipation 1.35 W with 6 cm² pad: Allows direct replacement of TO-126 devices in space-constrained SMT designs without external heatsinks.
Low VCE(sat) ≤ −0.5 V @ IC/IB = 10: Reduces conduction loss in battery-driven devices where efficiency impacts runtime.
Thermally optimized SOT223 Collector-connected leads + large thermal pad: Achieves Rth(j-sp) = 16 K/W to solder point - critical for pulsed-load reliability.

Applications

Linear Voltage Regulators High-Side Switches

Use Scenario: Pass transistor in adjustable LDOs delivering 3.3 V/1 A from 12 V input with thermal foldback.

IC Role / Device Role / Timing Role: PNP pass element controlling output voltage via emitter-follower configuration with feedback to base.

Use Value: Stable hFE and low VCE(sat) ensure <1 % load regulation error and <10 °C junction rise at full load.

Use Scenario: Enable/disable 24 V power rail to industrial sensor module using microcontroller GPIO.

IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry; base driven through current-limiting resistor.

Use Value: Dual-collector SOT223 layout sustains 1 A continuous with <1.5 W dissipation, eliminating need for TO-220 footprint.

Battery-Driven Devices MOSFET Drivers

Use Scenario: Reverse-polarity protection and load switch in portable medical monitor powered by Li-ion pack.

IC Role / Device Role / Timing Role: PNP configured as ideal diode controller or main power path switch.

Use Value: VCEO = −80 V accommodates 3S–4S battery packs with margin; low leakage (<100 nA) preserves shelf life.

Use Scenario: Level-shifting stage driving N-channel MOSFET gate in half-bridge motor control.

IC Role / Device Role / Timing Role: Fast-turn-off PNP pull-down stage complementing NPN high-side driver.

Use Value: fT = 145 MHz ensures <100 ns turn-off delay; dual collector improves transient current delivery during gate discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BCP52,115 VCEO = −60 V, IC = −1 A, hFE = 63–250 Limited to ≤48 V systems; lower breakdown margin reduces safety headroom in 48 V automotive-derived supplies. Select when cost sensitivity outweighs 20 V VCEO margin and thermal requirements match.
ZTX753 VCEO = −100 V, IC = −1 A, SOT89 package, Rth(j-a) = 125 K/W (no dual collector) Higher voltage rating but inferior thermal performance; lacks collector pad scalability of SOT223. Choose only if board space prohibits SOT223 footprint and 100 V rating is mandatory for overvoltage protection.

Compared with BCP52,115 and ZTX753, the BCP53,115 uniquely balances −80 V rating, dual-collector thermal design, and production-grade hFE binning - making it optimal for industrial power management where layout-driven thermal control and voltage margin are jointly critical.

Availability

BCP53,115 is available at Aetrix Electronics and suitable for linear voltage regulators, high-side switches, and MOSFET driver circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant SMT assembly.

Supply support for BCP53,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

The BCP53 series belongs to Nexperia's medium-power bipolar transistor product line, designed specifically for thermally demanding SMT power control applications where gain consistency and package-level thermal optimization are primary selection criteria.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current is −0.3 A, but continuous operation should be limited to ≤−50 mA to maintain safe junction temperature with standard PCB layouts. At IB = −50 mA and IC = −500 mA, VCE(sat) remains ≤−0.5 V, ensuring efficient switching without thermal runaway.

Can BCP53,115 replace TO-126 PNP transistors in existing designs?

Yes - the SOT223 package provides comparable thermal performance to TO-126 when mounted on ≥1 cm² copper, and pin-compatible footprints exist. However, the dual-collector configuration (pins 2 and 4) requires routing both to the same net and thermal pad, differing from single-pin TO-126 collector connections.

How does hFE vary with temperature and collector current?

hFE decreases at high temperature (e.g., drops ~20 % at Tj = 100 °C vs. 25 °C) and declines at high IC (>−500 mA); Figure 5 shows typical hFE = 40 at IC = −500 mA, Tamb = 25 °C. Designers must verify gain at worst-case operating points, not just room-temperature typicals.

Is BCP53,115 qualified for automotive applications?

No - the datasheet explicitly states this is a non-automotive qualified product (Rev. 11 revision history). It lacks AEC-Q101 qualification, automotive-grade screening, and guaranteed operation across −40 °C to +125 °C. For automotive use, Nexperia offers Q-qualified variants such as BCP53-16Q.

BCP53,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Power - Max:
1 W
Frequency - Transition:
145MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

BCP53,115 FAQ

1.How can I place an order for BCP53,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP53,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP53,115 reliable?

The price and inventory of BCP53,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP53,115 is usually 5 days.

3.What payment methods are accepted for BCP53,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP53,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP53,115?

BCP53,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP53,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP53,115?

For technical support, including BCP53,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP53,115 requirements.

6.How does Aetrix verify that BCP53,115 is sourced from the original manufacturer or authorized distributors?

All BCP53,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP53,115 meets industry standards.

7.What is the process for return or replacement of BCP53,115?

All BCP53,115 units undergo pre-shipment inspection (PSI). If there is an issue with BCP53,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP53,115 part is unused and in its original packaging.

Return procedure for BCP53,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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