Infineon Technologies BCP5316E6433HTMA1

Overview

BCP5316E6433HTMA1 from Infineon Technologies is a PNP silicon bipolar junction transistor designed for audio frequency driver and output stages in linear and switching applications. It features 80 V V_CEO, 1 A continuous collector current, 0.5 V typical V_CE(sat) at I_C = 500 mA/I_B = 50 mA, h_FE of 100–250 (at I_C = 150 mA), and SOT-223 surface-mount package with four terminals (B-C-E-C).

For engineers reviewing the BCP5316E6433HTMA1 datasheet, BCP5316E6433HTMA1 pinout, BCP5316E6433HTMA1 application, or BCP5316E6433HTMA1 equivalent, key selection criteria include its high-voltage PNP capability, low saturation voltage for efficient switching, complementary pairing with BCP54–BCP56 NPN types, RoHS-compliant SOT-223 thermal performance, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device operates as a medium-power PNP BJT optimized for linear amplification and saturated switching in analog and power-control circuits. Its 80 V V_CEO rating supports operation in 24–48 V rail systems, while the dual-collector configuration (pins 2 and 4) enables enhanced thermal dissipation and current sharing in high-current output stages.

The transistor exhibits DC current gain (h_FE) ranging from 100 to 250 at I_C = 150 mA and V_CE = 2 V, with f_T = 125 MHz ensuring usable bandwidth in AF and low-MHz switching applications. Junction-to-soldering-point thermal resistance ≤15 K/W allows stable operation up to T_J = 150 °C under proper PCB copper layout.

Key Specifications

Pinout & Package

SOT-223 package with exposed thermal pad (pin 4), standardized footprint per Infineon outline drawing: 6.5 × 3.5 × 1.75 mm, 4-terminal configuration (B–C–E–C), lead-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching and amplification applications.

Compared with BCP5316E6433HTMA1, BCP53-16T offers identical performance in a different reel configuration, while MJD2955G trades off gain and thermal efficiency for higher voltage margin-making the Infineon part preferable for space-constrained, thermally sensitive 48 V automotive and industrial designs.

Availability

BCP5316E6433HTMA1 is available at Aetrix Electronics and suitable for automotive door modules, industrial 24 V relay interfaces, and LED string current sinks requiring stable component supply, AEC-Q101 compliance, and SOT-223 thermal performance.

Supply support for BCP5316E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This transistor belongs to the BCP5x family of high-voltage PNP BJTs engineered for robust, thermally efficient switching and linear amplification in automotive body electronics and industrial power interfaces.

FAQ

Is BCP5316E6433HTMA1 pin-compatible with BCP53-16?

Yes, BCP5316E6433HTMA1 uses the same SOT-223 package with identical pin 1 (base), pin 2 (collector), pin 3 (emitter), and pin 4 (collector) assignment as BCP53-16. The marking "E6433HTMA1" reflects Infineon's internal lot and packaging code, not a functional variant.

What is the maximum safe operating current at 85 °C ambient?

At T_A = 85 °C with 25 mm² 2-oz copper pad, derating yields ~750 mA continuous collector current. This follows from P_tot = 2 W, R_thJA ≈ 45 K/W (per AN077), and ΔT = (85 + 15) − 25 = 75 K, giving P_max = 75 / 45 ≈ 1.67 W → I_C ≈ √(1.67 / 0.5) ≈ 0.75 A assuming V_CE(sat) = 0.5 V.

Can this transistor be used in avalanche mode?

No-BCP5316E6433HTMA1 is not rated or characterized for controlled avalanche operation. Its V_CEO = 80 V is a DC breakdown limit; operation beyond this risks irreversible junction damage. Transient overvoltage protection must be implemented externally using TVS diodes or clamping networks.

Does it support PWM switching at 20 kHz?

Yes-its f_T = 125 MHz and typical turn-off time <1 µs enable clean 20 kHz PWM switching with minimal overlap loss. For optimal performance, limit base drive impedance to ≤1 kΩ and ensure emitter bypass capacitance ≥100 nF to suppress inductive kickback in inductive loads.