Infineon Technologies BCP5316H6327XTSA1

Overview

BCP5316H6327XTSA1 from Infineon Technologies is a PNP silicon bipolar junction transistor designed for audio-frequency driver and output stages. It features 80 V collector-emitter breakdown voltage (V_(BR)CEO), 1 A continuous collector current (I_C), 0.5 V collector-emitter saturation voltage (V_CE(sat)) at I_C = 500 mA / I_B = 50 mA, DC current gain (h_FE) of 100–250 at I_C = 150 mA, and operates in SOT223 package for high-power linear amplification in automotive amplifier modules.

For engineers reviewing the BCP5316H6327XTSA1 datasheet, BCP5316H6327XTSA1 pinout, BCP5316H6327XTSA1 application, or BCP5316H6327XTSA1 equivalent, key selection criteria include verified V_(BR)CEO = 80 V, guaranteed h_FE ≥ 100 at 150 mA, low V_CE(sat) ≤ 0.5 V under switching conditions, thermal resistance R_thJS ≤ 15 K/W, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This PNP transistor operates in linear and switching modes with fixed emitter-base and collector-base junction structures optimized for stable gain across 5 mA to 500 mA collector currents. Its V_(BR)EBO = 5 V and I_CBO ≤ 0.1 µA at 30 V ensure robust blocking capability in bias-critical amplifier stages.

The device delivers f_T = 125 MHz at I_C = 50 mA / V_CE = 10 V, supporting high-fidelity AF signal handling up to mid-audio band. Junction temperature rating of 150 °C and R_thJS ≤ 15 K/W enable reliable operation in thermally constrained PCB layouts without forced cooling.

Key Specifications

Pinout & Package

BCP5316H6327XTSA1 is housed in a surface-mount SOT223 package with four terminals: pins 1 (Base), 2 (Collector), 3 (Emitter), and 4 (Collector tab). The exposed collector tab provides low-inductance, high-current path and serves as primary thermal conduction interface to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with BCP53-16, this part offers identical performance in identical packaging-only tape-and-reel logistics differ. Versus MJD2955G, BCP5316H6327XTSA1 trades absolute voltage/current headroom for SMT compatibility, thermal efficiency, and automotive qualification-critical for volume automotive electronics.

Availability

BCP5316H6327XTSA1 is available at Aetrix Electronics and suitable for automotive audio systems, industrial linear power supplies, DC motor drivers, and LED constant-current drivers requiring stable component supply with AEC-Q101 assurance and SOT223 manufacturability.

Supply support for BCP5316H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BCP5316H6327XTSA1 belongs to Infineon's BCP5x family of AEC-Q101-qualified PNP transistors engineered specifically for high-reliability audio-frequency amplification and linear regulation in automotive and industrial environments.

FAQ

Is BCP5316H6327XTSA1 pin-compatible with BCP53-16?

Yes-both share identical SOT223 pinout (pin 1 = Base, pin 2 = Collector, pin 3 = Emitter, pin 4 = Collector tab), identical die, and identical electrical specifications. The suffix "H6327XTSA1" denotes Infineon's standard 1000-piece tape-and-reel packaging; "-16" indicates alternate packaging format. No layout or schematic changes are required for substitution.

What is the maximum allowable power dissipation at 85°C ambient?

At T_A = 85 °C, maximum power dissipation is limited by junction temperature: P_max = (T_j(max) − T_A) / R_thJA. With R_thJA ≈ 125 K/W (typical for SOT223 on 2-layer 1-in² copper), P_max ≈ (150 − 85) / 125 = 0.52 W. For higher dissipation, use PCB copper pour to achieve R_thJS ≤ 15 K/W and reference T_S instead of T_A.

Does this transistor support pulse operation beyond its DC ratings?

Yes-pulse testing data confirms permissible peak collector current I_CM = 1.5 A for t_p ≤ 10 ms with duty cycle D < 2%. Derating curves show P_tot(max)/P_tot(DC) reaches 3× at t_p = 100 µs. Ensure base drive supports transient I_B ≥ I_C/h_FE(min) during pulses to avoid second breakdown.

Can BCP5316H6327XTSA1 replace BC807 in a 24 V logic-level interface?

No-BC807 is an SOT23 PNP with V_(BR)CEO = 45 V and I_C = 500 mA. BCP5316H6327XTSA1 has higher voltage/current ratings but larger SOT223 footprint and different gain profile (h_FE 100–250 vs. BC807's 120–475). Layout redesign and bias recalculation are required; it is not a drop-in replacement.