Diodes Incorporated BCP5416TA

Overview

BCP5416TA from Diodes Incorporated is an NPN medium-power transistor in SOT223 package, rated for 45 V V_CEO, 1 A continuous collector current, and 2 W power dissipation. It features low saturation voltage (V_CE(sat) ≤ 500 mV @ 500 mA/50 mA), h_FE gain group 16 (100–250 @ 150 mA), and f_T = 150 MHz - used in automotive audio output stages and industrial relay drivers where robust switching and thermal stability are required.

For engineers reviewing the BCP5416TA datasheet, BCP5416TA pinout, BCP5416TA application, or BCP5416TA equivalent, key selection criteria include verified V_CEO/I_C derating at +125°C, SOT223 thermal resistance (R_θJL = 19.4°C/W), gain consistency across 150 mA bias, and RoHS-3/halogen-free compliance for automotive PPAP programs.

Technical Context

This NPN bipolar junction transistor operates in linear amplification and saturated switching modes, with guaranteed h_FE ≥100 at I_C = 150 mA and V_CE = 2 V. Its 150 MHz f_T supports mid-frequency signal amplification up to ~50 MHz with stable gain.

The device uses a planar epitaxial die structure with emitter ballasting for current uniformity. Thermal performance is defined for mounting on 50 mm × 50 mm 1 oz copper PCBs, delivering R_θJA = 62°C/W under still-air conditions and R_θJL = 19.4°C/W to solder point - enabling reliable operation up to T_J = +150°C.

Key Specifications

Pinout & Package

Package: SOT223 - surface-mount plastic case with exposed collector tab for thermal and electrical connection; UL 94V-0 rated, 0.112 g mass, matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with BCP5410TA and MMBT5401, BCP5416TA provides higher guaranteed h_FE and SOT223 thermal capability - making it optimal for 1 A switching where gain stability and junction temperature control are critical.

Availability

BCP5416TA is available at Aetrix Electronics and suitable for automotive audio output stages, industrial relay drivers, DC motor speed control, and LED constant-current drivers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BCP5416TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The BCP54/55/56 series was developed for medium-power linear and switching applications in automotive, industrial, and consumer systems - emphasizing thermal reliability, gain consistency, and green compliance without performance trade-offs.

FAQ

What is the maximum junction temperature for continuous operation?

The BCP5416TA is rated for continuous operation from −55°C to +150°C junction temperature. At T_A = +85°C, derated power dissipation is 1.2 W based on R_θJA = 62°C/W and the 2 W absolute maximum rating - confirmed by thermal curves in DS35367 Rev. 7-2, page 3.

Is BCP5416TA qualified to AEC-Q101?

BCP5416TA is manufactured in IATF 16949-certified facilities and supports PPAP documentation, but it is not pre-qualified to AEC-Q101. Customers requiring formal qualification must initiate a specific AEC-Q101 test program through Diodes Incorporated's automotive team.

Can BCP5416TA be used in parallel configurations?

No - BCP5416TA lacks built-in emitter ballast resistors for current sharing. Parallel operation risks thermal runaway due to h_FE and V_BE mismatches. For higher current, use a single larger device like DXT13003K or implement external emitter resistors per leg.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a minimum 50 mm × 50 mm 1 oz copper area connected directly to the collector tab. The SOT223 suggested pad layout (DS35367 Rev. 7-2, page 7) includes 6.5 mm × 3.5 mm thermal pad with 0.25 mm solder mask opening and thermal vias to inner layers - achieving R_θJA ≤ 62°C/W.