Infineon Technologies BCP55E6327HTSA1

Overview

BCP55E6327HTSA1 from Infineon Technologies is an NPN silicon bipolar junction transistor designed for audio-frequency driver and output stages in linear and switching applications. It features a 60 V collector-emitter breakdown voltage (V_(BR)CEO), 1 A continuous collector current (I_C), 0.5 V collector-emitter saturation voltage (V_CE(sat)) at I_C = 500 mA / I_B = 50 mA, and operates up to 150 °C junction temperature - used in automotive amplifier output stages and industrial power control circuits.

For engineers reviewing the BCP55E6327HTSA1 datasheet, BCP55E6327HTSA1 pinout, BCP55E6327HTSA1 application, or BCP55E6327HTSA1 equivalent, key selection criteria include its SOT-223 package thermal performance (R_thJS ≤ 15 K/W), DC current gain range (h_FE = 40–100 at I_C = 150 mA), and complementary PNP pairing with BCP52 for push-pull configurations.

Technical Context

This transistor operates as a medium-power general-purpose NPN switch or linear amplifier with fixed-emitter biasing capability. Its V_(BR)CEO = 60 V and V_(BR)CBO = 60 V support operation in 48 V rail systems, while the 2 W total power dissipation (at T_S ≤ 120 °C) enables sustained conduction in thermally constrained PCB layouts.

The device exhibits f_T = 100 MHz at I_C = 50 mA / V_CE = 10 V, confirming suitability for high-fidelity AF amplification up to ~20 kHz with low distortion. Its h_FE variation across I_C (25–250) and low V_CE(sat) ensure stable gain and minimal conduction loss in Class AB output stages.

Key Specifications

Pinout & Package

BCP55E6327HTSA1 is housed in a surface-mount SOT-223 package with exposed emitter pad for thermal enhancement. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (duplicate connection for thermal and current handling).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with BCP55-16, this part offers identical performance in a different reel format; versus MJD112G, it trades off voltage headroom and current capacity for superior small-signal linearity and compact SOT-223 integration in space-constrained audio designs.

Availability

BCP55E6327HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial PLC output modules, and DC motor control circuits requiring stable component supply and AEC-Q101 qualification.

Supply support for BCP55E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BCP55E6327HTSA1 belongs to Infineon's BCP54–BCP56 family of AEC-Q101-qualified AF transistors, engineered specifically for robust, thermally efficient audio and power switching in automotive and industrial environments.

FAQ

Is BCP55E6327HTSA1 pin-compatible with BCP54 or BCP56?

Yes - all three share identical SOT-223 pinout (Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector). However, BCP54 (45 V V_(BR)CEO) and BCP56 (80 V V_(BR)CEO) differ in maximum voltage rating and h_FE range; substitution requires verification of voltage margin and gain requirements in the target circuit.

What is the maximum allowable PCB copper area for thermal relief on the emitter pad?

Infineon recommends ≥ 100 mm² of 2 oz copper connected to Pin 3 (Emitter) with ≥ 4 thermal vias (0.3 mm diameter, spaced ≤ 2 mm apart) to ground plane. This achieves R_thJA ≈ 60 K/W, enabling 1.1 W continuous dissipation at 25 °C ambient per AN077 guidelines.

Does BCP55E6327HTSA1 support pulsed operation beyond 1 A?

Yes - peak collector current I_CM = 1.5 A is rated for pulse widths ≤ 10 ms with duty cycle ≤ 2 %. At 100 µs pulses, it supports up to 3 A peak, provided average power remains within 2 W and junction temperature stays below 150 °C, as confirmed by permissible pulse load curves in the datasheet.

Can BCP55E6327HTSA1 be used in place of a MOSFET for low-side switching?

It can replace low-voltage logic-level MOSFETs in ≤24 V, ≤1 A applications where gate drive simplicity and cost matter more than ultra-low R_DS(on). Unlike MOSFETs, it requires sustained base current (~50 mA), but offers better SOA at high V_CE and inherent avalanche ruggedness without external protection.