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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCP55-QX

Name: BCP55-QX
Brand: Nexperia USA Inc.
SKU: BCP55-QX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCP55-QX

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BCP55-QX.pdf

Description:: TRANS NPN 60V 1A SOT-223

Quantity:: RFQ Add To RFQ list

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Inventory:2,665

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Product details

Overview

BCP55-Q from Nexperia is a 60 V, 1 A NPN medium power transistor in SOT223 (SC-73) package, designed for linear voltage regulation, low-side switching, and MOSFET driver stages in automotive and industrial power management circuits. It delivers h_FE = 63–250 at I_C = 150 mA, V_CE = 2 V, with P_tot = 1.35 W (with 6 cm² copper pad), and is AEC-Q101 qualified.

For engineers reviewing the BCP55-Q datasheet, BCP55-Q pinout, BCP55-Q application, or BCP55-Q equivalent, this page provides verified pin functions, thermal derating curves, DC current gain variants (BCP55-Q / -10-Q / -16-Q), junction-to-ambient thermal resistance (93 K/W max), and automotive-grade reliability data - all critical for high-reliability power stage design.

Technical Context

The BCP55-Q operates as a medium-power NPN bipolar junction transistor optimized for continuous linear-mode operation and pulsed switching up to 2 A peak. Its base-emitter breakdown voltage is 5 V, collector-emitter breakdown is 60 V, and saturation voltage is ≤0.5 V at I_C = 500 mA / I_B = 50 mA.

Thermal performance depends on PCB mounting: R_th(j-a) ranges from 192 K/W (standard footprint) to 93 K/W (6 cm² collector pad), enabling scalable power handling across ambient temperatures from −55 °C to +150 °C. Junction temperature is rated to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum safe collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in linear regulators and switch drivers.
I_C	1 A continuous - Rated DC collector current; supports sustained load switching in battery-powered devices and power management blocks.
h_FE	63–250 - Current gain range at V_CE = 2 V, I_C = 150 mA; enables predictable base drive sizing for low-side switches and amplifier biasing.
P_tot	1.35 W - Max total power dissipation with 6 cm² copper pad; determines thermal margin in enclosed automotive ECUs or industrial controllers.
R_th(j-a)	93 K/W - Junction-to-ambient thermal resistance with optimized 6 cm² collector pad; directly impacts required heatsinking and board layout area.
f_T	100–180 MHz - Transition frequency at V_CE = 5 V, I_C = 50 mA; supports stable operation in fast-switching MOSFET gate drivers up to ~10 MHz effective edge rates.
V_CE(sat)	≤0.5 V - Collector-emitter saturation voltage at I_C = 500 mA / I_B = 50 mA; minimizes conduction loss in low-side switch applications.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with 4 leads: pins 1 and 4 are internally connected to the collector for enhanced thermal and current handling; pin 2 is collector (alternate), pin 3 is emitter, and pin 1 is base - standard configuration for medium-power NPN transistors requiring dual-collector routing.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input for transistor turn-on; requires current-limited drive to achieve target h_FE-based collector current.
2	Collector	Main high-current output node; electrically tied to pin 4 for parallel current path and improved thermal conduction to PCB.
3	Emiter	Reference terminal for emitter-follower or common-emitter configurations; connects to ground or low-side return path.
4	Collector	Second collector terminal; used with pin 2 to distribute current and reduce thermal resistance via larger copper area.

Key Features

Feature	Design Value
AEC-Q101 qualification	Qualified for automotive applications per Stress Test Qualification for Discrete Semiconductors - ensures reliability in engine control, body electronics, and ADAS modules.
Three h_FE variants	BCP55-Q (63–250), BCP55-10-Q (63–160), BCP55-16-Q (100–250) - enables precise base drive optimization across production batches and operating conditions.
Dual-collector SOT223 package	Pins 2 and 4 both connect to collector - reduces effective thermal resistance and increases current-carrying capacity without changing footprint.
High P_tot scalability	1.35 W max with 6 cm² copper pad - allows use in space-constrained industrial power supplies where discrete heatsinks are impractical.
Low V_CE(sat)	≤0.5 V at I_C/I_B = 10 - minimizes power loss and self-heating in battery-driven devices operating at 3.3 V–24 V rails.

Applications

Linear Voltage Regulators

Power Management

Use Scenario: Pass transistor in adjustable LDOs delivering 1–3 A at 5–12 V output from higher-input rails.

IC Role / Device Role / Timing Role: NPN pass element controlling output voltage via base bias; handles continuous dissipation up to 1.35 W.

Use Value: Enables compact, low-cost linear regulation without external Darlington pairs or integrated regulators - ideal for noise-sensitive analog subsystems.

Use Scenario: Load switch or enable circuit in multi-rail industrial power distribution units.

IC Role / Device Role / Timing Role: Low-side switch controlling 12 V/1 A loads such as sensors, fans, or actuators.

Use Value: Delivers <0.5 V dropout at full load and supports rapid on/off cycling due to f_T > 100 MHz - reduces system standby power and improves response time.

MOSFET Drivers

Battery-Driven Devices

Use Scenario: Gate driver stage for N-channel power MOSFETs in motor control or DC-DC converter half-bridges.

IC Role / Device Role / Timing Role: High-current NPN buffer amplifying microcontroller GPIO signals to deliver ≥50 mA peak gate charge current.

Use Value: Ensures fast MOSFET turn-on with minimal Miller plateau delay, leveraging h_FE ≥ 63 and low V_BE (~0.8 V typical).

Use Scenario: Power switch in portable medical monitors, handheld test equipment, or wireless sensor nodes.

IC Role / Device Role / Timing Role: Main power path switch isolating battery from downstream circuitry during sleep mode.

Use Value: AEC-Q101 qualification and −55 °C to +150 °C operation ensure robustness across field deployments and extended shelf life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCP54-Q	PNP complement; same V_CEO = 60 V, I_C = 1 A, SOT223 package, but inverted polarity and lower h_FE range (40–250).	Used in high-side switch or complementary push-pull stages - not interchangeable without circuit redesign.	Select when sourcing matched NPN/PNP pairs for symmetrical output stages or level-shifting interfaces.
ZTX653	Higher V_CEO = 100 V, similar I_C = 1 A, TO-92 package; h_FE = 100–800 but lower P_tot (0.8 W) and no AEC-Q101 rating.	Suitable for non-automotive 100 V rail applications; lacks thermal performance and automotive qualification of BCP55-Q.	Choose only for cost-sensitive, non-automotive designs where voltage headroom >60 V is mandatory and board space permits TO-92.

Compared with BCP54-Q and ZTX653, the BCP55-Q uniquely combines AEC-Q101 qualification, dual-collector SOT223 thermal enhancement, and three factory-sorted h_FE grades - making it the preferred choice for automotive power management and industrial linear regulation where reliability and thermal predictability are critical.

Availability

BCP55-Q is available at Aetrix Electronics and suitable for linear voltage regulators, low-side switches, and MOSFET drivers requiring stable component supply in automotive ECU, industrial control, and battery-powered instrumentation programs.

Supply support for BCP55-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.

The BCP55-Q belongs to Nexperia's AEC-Q101-qualified medium-power bipolar transistor family, engineered specifically for robust linear and switching power control in harsh-environment automotive and industrial systems.

FAQ

What is the maximum allowable junction temperature for BCP55-Q?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent degradation. Derating is required above 25 °C ambient - for example, at 100 °C ambient, maximum usable P_tot drops to ~0.7 W with a 6 cm² pad (per Fig. 1).

Can BCP55-Q replace BC817 in SOT23 packages?

No - BCP55-Q uses SOT223 with dual collector pins and 1.35 W power capability, while BC817 is a 0.5 W SOT23 device rated for 0.5 A. The pinouts, thermal behavior, and current handling differ fundamentally; substitution would require PCB redesign and thermal validation.

How does the BCP55-Q h_FE grading affect base resistor selection?

BCP55-Q (63–250), BCP55-10-Q (63–160), and BCP55-16-Q (100–250) define minimum h_FE at I_C = 150 mA. For worst-case base drive, size R_B using the lowest h_FE in each grade - e.g., 63 for BCP55-Q - to guarantee saturation across process and temperature variation.

Is the SOT223 footprint compatible with wave soldering?

Yes - Nexperia provides dedicated wave soldering footprints (Fig. 11) with 1.9 mm solder land spacing and defined transport direction. The 4-pin layout supports automated wave soldering, but thermal pad connection to large copper areas remains essential to achieve rated P_tot and R_th(j-a).

BCP55-QX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: BCP55-Q

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 63 @ 150mA, 2V

Power - Max:: 650 mW

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

BCP55-QX FAQ

1.How can I place an order for BCP55-QX through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP55-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP55-QX reliable?

The price and inventory of BCP55-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP55-QX is usually 5 days.

3.What payment methods are accepted for BCP55-QX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP55-QX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP55-QX?

BCP55-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP55-QX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP55-QX?

For technical support, including BCP55-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP55-QX requirements.

6.How does Aetrix verify that BCP55-QX is sourced from the original manufacturer or authorized distributors?

All BCP55-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP55-QX meets industry standards.

7.What is the process for return or replacement of BCP55-QX?

All BCP55-QX units undergo pre-shipment inspection (PSI). If there is an issue with BCP55-QX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP55-QX part is unused and in its original packaging.

Return procedure for BCP55-QX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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