Nexperia USA Inc. BCP55TF
- Part No.:
- BCP55TF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BCP55TF.pdf
- Description:
- TRANS NPN 60V 1A SOT-223
- Quantity:
- Payment:

- Shipping:

Inventory:3,022
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Product details
Overview
BCP55TF from Nexperia is an AEC-Q101-qualified NPN medium power transistor in SOT223 (SC-73) package, rated for 60 V VCEO, 1 A continuous collector current, and 1.8 W total power dissipation on 4-layer PCB with 1 cm² collector pad. It delivers hFE = 63–250 at VCE = 2 V / IC = 150 mA and supports linear voltage regulators, MOSFET drivers, and high-side switch circuits in automotive and industrial power management.
For engineers reviewing the BCP55TF datasheet, BCP55TF pinout, BCP55TF application, or BCP55TF equivalent, key selection criteria include its 60 V breakdown rating, thermal performance under FR4 PCB mounting variants, pulsed SOA compliance up to 2 A, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
The BCP55TF operates as a silicon NPN bipolar junction transistor optimized for medium-power linear and switching applications. Its structure supports DC current gain ranging from 63 to 250 depending on bias conditions, with guaranteed minimum hFE of 63 at IC = 5 mA and VCE = 2 V.
It features low VCE(sat) ≤ 500 mV at IC = 500 mA / IB = 50 mA and fT = 100–155 MHz, enabling stable operation in audio amplifiers and fast-switching driver stages. Thermal resistance Rth(j-a) varies from 70 K/W (4-layer PCB, 1 cm² pad) to 209 K/W (standard single-sided FR4), directly impacting safe operating area derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Maximum collector-emitter voltage before breakdown; defines upper rail limit in high-side switches and linear regulators. |
| IC | 1 A - Continuous DC collector current rating; supports load currents up to 1 A in steady-state power stage designs. |
| hFE | 63–250 - DC current gain range at VCE = 2 V / IC = 150 mA; enables predictable base drive sizing across production lots. |
| VCE(sat) | ≤ 500 mV - Collector-emitter saturation voltage at IC = 500 mA / IB = 50 mA; minimizes conduction loss in switching applications. |
| Ptot | 1.8 W - Max power dissipation on 4-layer FR4 PCB with 1 cm² collector pad; determines heatsinking requirements in compact layouts. |
| fT | 100–155 MHz - Transition frequency at VCE = 5 V / IC = 50 mA; supports stable small-signal amplification up to ~100 MHz. |
| Rth(j-a) | 70–209 K/W - Junction-to-ambient thermal resistance across PCB mounting configurations; critical for thermal design margining. |
Pinout & Package
SOT223 (SC-73) surface-mount plastic package with integrated heatsink tab (pin 4), designed for enhanced thermal performance on FR4 PCBs. Four-terminal layout provides dual collector connections for improved current handling and thermal path efficiency.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control terminal for forward-biased junction; requires current-limited drive to ensure hFE-based gain stability. |
| 2 | Collector (C) | Main current-carrying terminal; electrically connected to pin 4 for parallel current path and lower thermal resistance. |
| 3 | Emitter (E) | Reference terminal for bias network; tied to ground or low-impedance return in common-emitter configurations. |
| 4 | Collector (C) | Dedicated thermal and electrical connection to collector; must be soldered to copper pour for rated Ptot and Rth(j-a). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications per stress test standard; ensures reliability in engine control, body electronics, and ADAS subsystems. |
| High power dissipation | 1.8 W max on optimized 4-layer PCB - enables higher output current without external heatsink in space-constrained modules. |
| Three hFE variants | BCP55T (63–250), BCP55-10T (63–160), BCP55-16T (100–250) - allows precise gain matching for feedback loop stability and drive strength tuning. |
| Peak current capability | 2 A single-pulse (tp ≤ 1 ms) - supports inrush current handling in power-up sequencing and motor driver precharge circuits. |
| Low VBE | ≤ 1 V at IC = 500 mA - reduces base drive power loss and eases compatibility with 3.3 V/5 V logic-level controllers. |
Applications
| Linear Voltage Regulators | MOSFET Drivers |
|---|---|
|
Use Scenario: Pass transistor in adjustable LDO or series regulator supplying 5–12 V to microcontrollers and sensors. IC Role / Device Role / Timing Role: NPN pass element controlling output voltage via emitter-follower configuration with feedback to base. Use Value: 60 V rating accommodates wide input ranges; low VCE(sat) minimizes dropout voltage and thermal load at 1 A output. |
Use Scenario: Gate driver stage for N-channel power MOSFETs in DC-DC converters and motor H-bridges. IC Role / Device Role / Timing Role: Medium-current switch sourcing/sinking gate charge during turn-on/turn-off transitions. Use Value: 2 A peak current capability handles fast gate charging; fT > 100 MHz ensures clean edge fidelity up to 500 kHz switching. |
| High-Side Switches | Power Management Amplifiers |
|
Use Scenario: Load switch controlling 12–24 V battery-fed subsystems (e.g., lighting, HVAC actuators) in automotive ECUs. IC Role / Device Role / Timing Role: High-side NPN switch with base resistor network and flyback protection diode. Use Value: AEC-Q101 qualification ensures robustness against load dump transients; 60 V VCEO withstands ISO 7637-2 pulse 5a. |
Use Scenario: Output stage in Class-A/B audio amplifiers or signal conditioning circuits for industrial sensors. IC Role / Device Role / Timing Role: Linear amplifier transistor biased in active region for analog signal reproduction. Use Value: hFE consistency across temperature (−55 °C to 150 °C) maintains gain stability; low Cc = 4.5 pF limits high-frequency distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN medium power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCP56TF | Complementary PNP device with identical SOT223 package, −60 V VCEO, −1 A IC, and matched hFE range. | Used in complementary push-pull output stages or dual-rail regulators where PNP symmetry is required. | Select when building balanced output pairs or needing polarity inversion without changing footprint or thermal layout. |
| ZTX653 | Higher VCEO = 100 V, same SOT223 package, but lower hFE min = 40 and no AEC-Q101 qualification. | Suitable for industrial SMPS primary-side snubbers or non-automotive high-voltage linear regulators. | Choose only if 100 V rating is mandatory and automotive qualification is not required; verify SOA derating at elevated ambient. |
Compared with BCP55TF, BCP56TF enables complementary circuit topologies without layout change, while ZTX653 trades automotive qualification and tighter hFE for higher voltage headroom-making BCP55TF optimal for AEC-compliant 60 V systems requiring predictable gain and thermal behavior.
Availability
BCP55TF is available at Aetrix Electronics and suitable for automotive power management, industrial linear regulators, and MOSFET driver circuits requiring stable component supply and AEC-Q101 assurance.
Supply support for BCP55TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer applications.
The BCP55T series belongs to Nexperia's AEC-Q101-qualified discrete transistor portfolio, engineered specifically for robust medium-power switching and linear regulation in harsh automotive environments.
FAQ
What is the maximum allowable junction temperature for BCP55TF?
The absolute maximum junction temperature (Tj) is 150 °C per IEC 60134 limiting values. Operation above this threshold risks permanent parametric shift or failure. Derating curves in Figure 1 show power dissipation must be reduced linearly above 25 °C ambient, with full derating applied beyond 125 °C ambient on standard FR4 layouts.
Does BCP55TF require a heatsink in typical applications?
No dedicated heatsink is required if mounted per Nexperia's recommended footprint: 4-layer FR4 PCB with ≥1 cm² copper pour connected to pin 4 (collector tab). Under those conditions, Rth(j-a) = 70 K/W enables 1.8 W dissipation at ΔT = 126 K. On single-layer boards, thermal relief vias and larger pads are mandatory to avoid exceeding Tj limits.
How does the dual-collector pin configuration improve performance?
Pins 2 and 4 are internally connected to the same collector node, providing parallel current paths and doubling the effective solder joint area for heat transfer. This reduces thermal resistance by up to 35% versus single-pin collectors and lowers inductance in high-di/dt switching, improving SOA margin and transient response in driver applications.
Can BCP55TF replace BC817 in SOT23 packages?
No-BCP55TF is not a drop-in replacement for BC817 due to different package (SOT223 vs. SOT23), higher power rating (1.8 W vs. 0.25 W), and pinout mismatch (4-pin vs. 3-pin). While both are NPN transistors, substituting them requires PCB redesign, thermal validation, and requalification of SOA margins under load transients.
BCP55TF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 63 @ 150mA, 2V
- Power - Max:
- 1.3 W
- Frequency - Transition:
- 155MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
BCP55TF FAQ
1.How can I place an order for BCP55TF through Aetrix?
Please submit a Request for Quotation (RFQ) for BCP55TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCP55TF reliable?
The price and inventory of BCP55TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP55TF is usually 5 days.
3.What payment methods are accepted for BCP55TF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP55TF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCP55TF?
BCP55TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCP55TF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCP55TF?
For technical support, including BCP55TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP55TF requirements.
6.How does Aetrix verify that BCP55TF is sourced from the original manufacturer or authorized distributors?
All BCP55TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP55TF meets industry standards.
7.What is the process for return or replacement of BCP55TF?
All BCP55TF units undergo pre-shipment inspection (PSI). If there is an issue with BCP55TF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCP55TF part is unused and in its original packaging.
Return procedure for BCP55TF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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