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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BCP56-10T3G

Name: BCP56-10T3G
Brand: onsemi
SKU: BCP56-10T3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCP56-10T3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BCP56-10T3G.pdf

Description:: TRANS NPN 80V 1A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCP56-10T3G from onsemi is an NPN silicon epitaxial transistor in SOT-223 package, rated for 80 V_CEO, 1.0 A continuous collector current, and 1.5 W power dissipation at T_A = 25°C. It delivers h_FE = 100–250 (at I_C = 150 mA), V_CE(sat) ≤ 0.5 V, and f_T = 130 MHz, and is used in medium-power audio amplifier stages and linear regulator pass elements.

For engineers reviewing the BCP56-10T3G datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain consistency across I_C = 5–500 mA, thermal resistance (R_θJA = 83.3°C/W), safe operating area at elevated junction temperatures, and Pb-free SOT-223 manufacturability with wave/reflow compatibility.

Technical Context

This device operates as a medium-power general-purpose NPN bipolar junction transistor optimized for linear amplification and switching in surface-mount applications. Its SOT-223 package integrates a thermally enhanced collector tab, enabling stable operation up to T_J = 150°C with defined derating above 25°C ambient.

The BCP56-10T3G exhibits specified h_FE bins (100–250) at I_C = 150 mA/V_CE = 2 V, low V_CE(sat) under forced β = 10, and switching times (t_r = 14 ns, t_s = 714 ns) suitable for audio-frequency and DC-DC control circuits-not RF or high-speed digital switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum collector-emitter voltage before breakdown; defines safe DC/peak swing in amplifier output or regulator pass stage.
I_C (continuous)	1.0 A - Continuous collector current rating; supports medium-power load driving without forced cooling.
P_D @ T_A = 25°C	1.5 W - Total power dissipation limit on FR-4 board; requires thermal pad design per 0.93 in² collector pad spec.
h_FE	100–250 - DC current gain range at I_C = 150 mA/V_CE = 2 V; enables predictable biasing in Class-A/B amplifier designs.
f_T	130 MHz - Current-gain bandwidth product; confirms usable gain up to ~10–20 MHz in small-signal amplifiers.
R_θJA	83.3°C/W - Junction-to-ambient thermal resistance (surface mounted); determines temperature rise per watt dissipated on standard PCB.

Pinout & Package

Package: SOT-223 (Case 318E, Style 1), surface-mount, thermally enhanced with exposed collector tab. Pin 1 = Base, Pin 2 & 4 = Collector (common), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased base-emitter junction; requires current-limited drive to achieve target I_C.
2, 4	Collector	High-current output node; electrically and thermally connected to exposed copper tab for heat transfer to PCB.
3	Emitter	Reference terminal for bias network; typically tied to ground or negative rail in common-emitter configurations.

Key Features

Feature	Design Value
High current capability	1.0 A continuous I_C enables use in power output stages without parallel devices.
SOT-223 thermal performance	Exposed collector tab and R_θJA = 83.3°C/W allow >1 W dissipation on standard FR-4 without heatsink.
Controlled h_FE binning	BCP56-10 variant guarantees h_FE ≥ 100 at I_C = 150 mA, improving gain predictability in production designs.
Pb-free, RoHS-compliant	Meets global environmental regulations; qualified to AEC-Q101 when ordered with NSV prefix.

Applications

Audio Power Amplifier Stage	Linear Voltage Regulator Pass Element
Use Scenario: Final output stage of 5–10 W Class-AB audio amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power transistor delivering amplified current to load with low V_CE(sat) and stable h_FE over temperature. Use Value: Enables compact SMT design with <0.5 V saturation drop at 500 mA, reducing heat generation and improving efficiency vs. TO-220 alternatives.	Use Scenario: Series pass element in adjustable 3–12 V, 0.5–1 A linear regulators (e.g., LM317-based). IC Role / Device Role / Timing Role: High-current, medium-voltage pass transistor regulating output by dissipating excess input-output differential. Use Value: Supports 1 A continuous load with 80 V V_CEO headroom, allowing wide input range while maintaining SOA integrity at T_J ≤ 150°C.
DC-DC Converter Control Switch	Industrial Sensor Signal Conditioning
Use Scenario: Low-frequency (<100 kHz) switching element in buck converter feedback loop or gate driver stage. IC Role / Device Role / Timing Role: Medium-speed switch controlling MOSFET gate or transformer primary with defined t_s/t_f timing. Use Value: Storage time t_s = 714 ns and fall time t_f = 58 ns enable reliable turn-off in non-resonant topologies without snubbers.	Use Scenario: Transimpedance or current-source stage for 4–20 mA industrial sensor interfaces. IC Role / Device Role / Timing Role: Precision current source/sink with stable h_FE and low leakage (I_CBO ≤ 100 nA). Use Value: Maintains accuracy across −55°C to +150°C with minimal gain drift, supporting harsh-environment analog front-ends.

Audio Power Amplifier Stage

Linear Voltage Regulator Pass Element

Use Scenario: Final output stage of 5–10 W Class-AB audio amplifier driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power transistor delivering amplified current to load with low V_CE(sat) and stable h_FE over temperature.

Use Value: Enables compact SMT design with <0.5 V saturation drop at 500 mA, reducing heat generation and improving efficiency vs. TO-220 alternatives.

Use Scenario: Series pass element in adjustable 3–12 V, 0.5–1 A linear regulators (e.g., LM317-based).

IC Role / Device Role / Timing Role: High-current, medium-voltage pass transistor regulating output by dissipating excess input-output differential.

Use Value: Supports 1 A continuous load with 80 V V_CEO headroom, allowing wide input range while maintaining SOA integrity at T_J ≤ 150°C.

DC-DC Converter Control Switch

Industrial Sensor Signal Conditioning

Use Scenario: Low-frequency (<100 kHz) switching element in buck converter feedback loop or gate driver stage.

IC Role / Device Role / Timing Role: Medium-speed switch controlling MOSFET gate or transformer primary with defined t_s/t_f timing.

Use Value: Storage time t_s = 714 ns and fall time t_f = 58 ns enable reliable turn-off in non-resonant topologies without snubbers.

Use Scenario: Transimpedance or current-source stage for 4–20 mA industrial sensor interfaces.

IC Role / Device Role / Timing Role: Precision current source/sink with stable h_FE and low leakage (I_CBO ≤ 100 nA).

Use Value: Maintains accuracy across −55°C to +150°C with minimal gain drift, supporting harsh-environment analog front-ends.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCP56-16T3G	Higher h_FE bin (160–250 at I_C = 150 mA); otherwise identical ratings and package.	Preferred where higher gain reduces base drive requirements; not interchangeable without circuit re-biasing.	Select BCP56-16T3G only if gain margin >2× is needed; verify stability in feedback loops.
MJD112T4G	Same SOT-223 package, but PNP polarity, 100 V_CEO, 2 A I_C, lower h_FE (20–100); complementary to BCP56 series.	Used in push-pull output stages or as PNP counterpart-not direct functional replacement.	Choose MJD112T4G only for complementary PNP roles; not a drop-in substitute for BCP56-10T3G.

Compared with BCP56-10T3G, the BCP56-16T3G offers higher guaranteed h_FE for reduced base drive loss, while MJD112T4G serves as its PNP complement-not a functional alternative-making the BCP56-10T3G optimal for NPN-specific linear and switching tasks requiring 100–250 gain consistency.

Availability

BCP56-10T3G is available at Aetrix Electronics and suitable for audio amplifier modules, linear regulator assemblies, and industrial sensor signal conditioning circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for BCP56-10T3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BCP56 series belongs to onsemi's general-purpose bipolar transistor portfolio, designed specifically for medium-power linear amplification and switching in surface-mount audio, power management, and industrial control applications.

FAQ

What is the maximum junction temperature specification for BCP56-10T3G?

The BCP56-10T3G has a maximum junction temperature (T_J) of 150°C, as confirmed in the Absolute Maximum Ratings table. This rating applies under continuous operation with proper PCB thermal design-specifically a 0.93 in² copper pad for the collector tab-and must be respected to maintain reliability and avoid parametric shift or failure.

Does BCP56-10T3G support wave soldering and reflow processes?

Yes, the BCP56-10T3G in SOT-223 package is qualified for both wave and reflow soldering. The datasheet explicitly states that its formed leads absorb thermal stress during soldering, preventing die damage. Peak solder temperature is rated at 260°C for 10 seconds, aligning with industry-standard lead-free reflow profiles.

What is the guaranteed h_FE range for BCP56-10T3G at I_C = 150 mA?

The BCP56-10T3G guarantees h_FE ≥ 100 at I_C = 150 mA and V_CE = 2.0 V, per the Electrical Characteristics table. This minimum value distinguishes it from the base BCP56 (≥25) and BCP56-16 (≥160) variants, ensuring predictable gain in production-biased amplifier and regulator circuits.

Is BCP56-10T3G pin-compatible with other SOT-223 NPN transistors like MMBT5551?

No, BCP56-10T3G is not pin-compatible with MMBT5551. While both use SOT-223, the BCP56-10T3G has Pins 2 & 4 as collector (dual-tab configuration), whereas MMBT5551 uses single-collector-pin layout. Substituting without verifying pinout risks incorrect biasing or short-circuit conditions in the BCP56-10T3G circuit.

What is the thermal resistance (R_θJA) of BCP56-10T3G when mounted on a standard FR-4 PCB?

The BCP56-10T3G has a specified R_θJA of 83.3°C/W when mounted on a 1.575 in × 1.575 in × 0.0625 in FR-4 board with a 0.93 in² collector pad. This value assumes surface-mount installation with no external heatsink and defines the temperature rise per watt dissipated under those exact mechanical conditions.

BCP56-10T3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 63 @ 150mA, 2V

Power - Max:: 1.5 W

Frequency - Transition:: 130MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223 (TO-261)

BCP56-10T3G FAQ

1.How can I place an order for BCP56-10T3G through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP56-10T3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP56-10T3G reliable?

The price and inventory of BCP56-10T3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP56-10T3G is usually 5 days.

3.What payment methods are accepted for BCP56-10T3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP56-10T3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP56-10T3G?

BCP56-10T3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP56-10T3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP56-10T3G?

For technical support, including BCP56-10T3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP56-10T3G requirements.

6.How does Aetrix verify that BCP56-10T3G is sourced from the original manufacturer or authorized distributors?

All BCP56-10T3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP56-10T3G meets industry standards.

7.What is the process for return or replacement of BCP56-10T3G?

All BCP56-10T3G units undergo pre-shipment inspection (PSI). If there is an issue with BCP56-10T3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP56-10T3G part is unused and in its original packaging.

Return procedure for BCP56-10T3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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