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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCP56-10TF

Name: BCP56-10TF
Brand: Nexperia USA Inc.
SKU: BCP56-10TF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCP56-10TF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BCP56-10TF.pdf

Description:: TRANS NPN 80V 1A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCP56-10TF from Nexperia is an NPN medium power transistor in SOT223 (SC-73) package, rated for 80 V V_CEO, 1 A continuous collector current, and DC current gain (h_FE) of 63–160 at V_CE = 2 V and I_C = 150 mA. It serves as a high-side switch or MOSFET driver in linear voltage regulators and power management circuits.

For engineers reviewing the BCP56-10TF datasheet, BCP56-10TF pinout, BCP56-10TF application, or BCP56-10TF equivalent, key selection criteria include its 80 V breakdown rating, thermal resistance down to 70 K/W on 4-layer PCBs, peak pulse current capability of 2 A, and suitability for medium-power switching and amplification where robust SOA and stable h_FE across temperature are required.

Technical Context

This transistor operates in active and saturation regions with defined safe operating area (SOA) up to 1 s pulses and continuous DC operation at ambient temperatures from –55 °C to 150 °C. Its junction-to-ambient thermal resistance varies from 70 K/W (4-layer PCB, 1 cm² collector pad) to 209 K/W (standard FR4 single-sided copper), directly impacting power handling in real layouts.

The device exhibits pulsed h_FE of 63–160 at I_C = 150 mA, V_CE = 2 V, with V_CE(sat) ≤ 500 mV at I_C = 500 mA / I_B = 50 mA, and transition frequency f_T = 100–155 MHz at V_CE = 5 V, I_C = 50 mA - confirming suitability for medium-speed switching and analog amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines maximum supply rail compatibility.
I_C	1 A - Continuous DC collector current rating; sets steady-state load drive capability.
h_FE	63–160 - DC current gain range at V_CE = 2 V, I_C = 150 mA; determines required base drive for saturation.
V_CE(sat)	≤ 500 mV - Collector-emitter saturation voltage at I_C = 500 mA / I_B = 50 mA; governs conduction loss and heat generation in switching mode.
P_tot	1.8 W - Maximum total power dissipation on 4-layer FR4 PCB with 1 cm² collector pad; defines thermal design margin.
f_T	100–155 MHz - Transition frequency at V_CE = 5 V, I_C = 50 mA; indicates usable bandwidth for small-signal amplification.
R_th(j-a)	70 K/W - Minimum thermal resistance (junction-to-ambient) achievable with optimized 4-layer PCB layout; critical for thermal derating.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with four leads: pins 1 and 4 are electrically connected to the collector (integrated heatsink tab), pin 2 is collector (alternate connection), pin 3 is emitter, and pin 1 is base - enabling high-current routing and efficient thermal transfer via the exposed collector pad.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires current-limited drive to bias transistor into active or saturation region.
2	Collector	Main high-current output node; electrically tied to pin 4 and internal heatsink tab for thermal and current path integrity.
3	Emiter	Reference/return path for collector current; common node for emitter-follower or grounded-emitter configurations.
4	Collector	Secondary collector connection; shares same node as pin 2 and internal metal tab - used for enhanced thermal coupling and current sharing.

Key Features

Feature	Design Value
High collector current capability	1 A continuous and 2 A peak pulse (t_p ≤ 1 ms) enable driving moderate loads without external current boosting.
Three h_FE selections	BCP56-10TF offers mid-range gain (63–160), balancing drive sensitivity and stability versus higher-gain variants.
High power dissipation	Up to 1.8 W on optimized 4-layer PCB supports sustained operation in compact power stages without forced cooling.
Robust SOA	Defined safe operating area extends to 100 V / 1 A DC and higher pulse limits - suitable for linear regulator pass elements and inductive load switching.
Thermal performance	R_th(j-a) as low as 70 K/W enables reliable operation at elevated ambient temperatures when properly mounted.

Applications

Linear Voltage Regulators

MOSFET Drivers

Use Scenario: Used as the series pass transistor in adjustable linear regulators delivering up to 1 A output current.

IC Role / Device Role / Timing Role: NPN pass element controlling output voltage via base voltage modulation; operates in active region for regulation.

Use Value: 80 V V_CEO allows wide input range (e.g., 12–72 V), while 1.8 W P_tot supports >1 W dissipation at typical dropout voltages.

Use Scenario: Driving the gate of N-channel power MOSFETs in half-bridge or high-side configurations.

IC Role / Device Role / Timing Role: Medium-speed level-shifting switch providing fast turn-on/turn-off current to charge/discharge MOSFET gate capacitance.

Use Value: f_T ≥ 100 MHz and 2 A I_CM ensure sub-microsecond switching transitions for MOSFETs up to ~10 nF gate charge.

High-Side Switches

Power Management

Use Scenario: Controlling positive-rail loads (e.g., sensors, actuators) directly from microcontroller GPIOs via base resistor.

IC Role / Device Role / Timing Role: High-side NPN switch with emitter-follower configuration; base driven, collector tied to supply, emitter to load.

Use Value: V_CEO = 80 V and I_C = 1 A support industrial 24 V/48 V systems; integrated collector tab simplifies heatsinking.

Use Scenario: Enabling/disabling subsystems (e.g., USB ports, display backlights) in battery-powered or multi-rail embedded systems.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on slew rate; operated in saturation for minimal conduction loss.

Use Value: V_CE(sat) ≤ 500 mV at 500 mA ensures < 250 mW loss per switch, extending battery life and reducing thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCP56-16TF	Higher h_FE (100–250) at same test conditions; otherwise identical ratings and package.	Better suited for low-base-drive applications (e.g., direct MCU GPIO drive), but less stable gain vs. temperature than -10T.	Select when base current is constrained and gain consistency over temperature is secondary to drive efficiency.
BCP56-10TA	Same electrical specs, but in leaded SOT-89 package (TO-243AA); no exposed collector pad, higher R_th(j-a).	Limited to lower-power applications due to reduced thermal performance (R_th(j-a) ≈ 125–200 K/W).	Choose only if through-hole assembly or legacy footprint compatibility is required; avoid for >0.5 W continuous dissipation.

Compared with BCP56-10TF, the -16TF variant trades gain stability for higher h_FE sensitivity, while the -10TA sacrifices thermal performance for leaded mounting - making the -10TF the optimal balance of drive margin, thermal headroom, and manufacturability in SMT power designs.

Availability

BCP56-10TF is available at Aetrix Electronics and suitable for linear voltage regulators, MOSFET drivers, and high-side switches requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for BCP56-10TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET components, with leadership in automotive and industrial standard products.

The BCP56T series belongs to Nexperia's medium-power bipolar transistor product line, designed specifically for cost-sensitive, thermally demanding applications such as power conversion, load switching, and interface buffering in industrial and consumer equipment.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current (I_B) is 0.2 A per datasheet limiting values. For reliable long-term operation, design base drive to stay below 100 mA continuous, especially when ambient temperature exceeds 75 °C, to avoid thermal runaway and ensure h_FE stability.

Can BCP56-10TF be used in avalanche mode?

No - BCP56-10TF is not rated or characterized for avalanche energy handling. Its V_CEO = 80 V and V_CBO = 100 V are absolute maximum ratings, not avalanche breakdown specifications. Inductive switching must include clamping (e.g., flyback diode) to prevent destructive voltage overshoot.

How does the dual-collector pin configuration affect PCB layout?

Pins 2 and 4 are internally shorted to the collector and heatsink tab. Layout must connect both pins to the same large copper pour (≥1 cm²) for optimal thermal performance. Separating them or routing only one degrades R_th(j-a) by up to 50 K/W and risks localized overheating.

Is BCP56-10TF qualified for automotive applications?

No - per Nexperia revision history (Rev. 3, July 2022), the BCP56T series is explicitly non-automotive qualified. Automotive alternatives (e.g., BCP56-10Q) are separately qualified to AEC-Q101 and require distinct part numbering and documentation.

BCP56-10TF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: BCP56T

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 63 @ 150mA, 2V

Power - Max:: 600 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

BCP56-10TF FAQ

1.How can I place an order for BCP56-10TF through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP56-10TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP56-10TF reliable?

The price and inventory of BCP56-10TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP56-10TF is usually 5 days.

3.What payment methods are accepted for BCP56-10TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP56-10TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP56-10TF?

BCP56-10TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP56-10TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP56-10TF?

For technical support, including BCP56-10TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP56-10TF requirements.

6.How does Aetrix verify that BCP56-10TF is sourced from the original manufacturer or authorized distributors?

All BCP56-10TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP56-10TF meets industry standards.

7.What is the process for return or replacement of BCP56-10TF?

All BCP56-10TF units undergo pre-shipment inspection (PSI). If there is an issue with BCP56-10TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP56-10TF part is unused and in its original packaging.

Return procedure for BCP56-10TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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