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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BCP56-10T-QF

Name: BCP56-10T-QF
Brand: Nexperia USA Inc.
SKU: BCP56-10T-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCP56-10T-QF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BCP56-10T-QF.pdf

Description:: TRANS NPN 80V 1A SOT-223

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Product details

Overview

BCP56-10T-Q from Nexperia is an AEC-Q101-qualified NPN medium power transistor in SOT223 (SC-73) package, rated for 80 V V_CEO, 1 A continuous collector current, and 160 h_FE at V_CE = 2 V / I_C = 150 mA. It delivers high power dissipation (up to 1.8 W on 4-layer PCB), supports automotive-grade linear voltage regulators and high-side switches, and features dual collector terminals for enhanced thermal and current-handling capability.

For engineers reviewing the BCP56-10T-Q datasheet, BCP56-10T-Q pinout, BCP56-10T-Q application, or BCP56-10T-Q equivalent, this page provides verified pin functions, thermal derating curves, safe operating area (SOA) boundaries, h_FE binning details, and validated automotive qualification status - all critical for robust power stage design in automotive and industrial systems.

Technical Context

This transistor operates as a medium-power NPN switch or linear amplifier with dual-collector configuration (pins 2 and 4 both connected to collector), enabling improved heat spreading and current sharing in high-reliability applications. Its 80 V V_CEO rating and 150 °C maximum junction temperature support operation in 24 V and 48 V automotive subsystems under transient overvoltage conditions.

The device exhibits pulsed peak collector current capability of 2 A (t_p ≤ 1 ms), transition frequency f_T of 100–155 MHz at I_C = 50 mA, and low V_CE(sat) of ≤ 500 mV at I_C = 500 mA / I_B = 50 mA - confirming suitability for fast-switching and low-loss power control stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	80 V - Withstands 24 V/48 V system transients without breakdown in automotive power rails.
I_C (continuous)	1 A - Supports medium-power load switching up to ~12 W at 12 V with adequate heatsinking.
h_FE	63–160 - Bin-specific DC current gain ensures predictable base drive requirements for stable biasing.
P_tot (max)	1.8 W - Achievable only on 4-layer FR4 PCB with 1 cm² collector pad; enables compact thermal design.
R_th(j-a)	70 K/W - Thermal resistance on optimized 4-layer board allows ΔT_j-a ≈ 126 °C at full 1.8 W dissipation.
f_T	100–155 MHz - Enables use in audio amplifiers and low-MHz switching circuits with minimal gain roll-off.
V_CE(sat)	≤ 500 mV @ I_C/I_B = 10 - Low saturation voltage reduces conduction loss and self-heating during switching.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with integrated heatsink tab (pin 4), 4-terminal layout optimized for thermal performance and PCB copper area utilization. Dual collector terminals (pins 2 and 4) provide parallel current paths and enhanced thermal conduction to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~50 mA base drive for full 1 A collector conduction; low V_BE (~0.7–1.0 V) simplifies driver design.
2	Collector	Primary high-current output node; electrically identical to pin 4; used for signal routing and thermal anchoring.
3	Emiter	Reference terminal for emitter-follower or common-emitter configurations; tied to ground or load return path.
4	Collector	Secondary collector terminal bonded directly to heatsink tab; mandatory connection to large copper pour for thermal management.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications per stress test standard; supports PPAP documentation.
Dual collector terminals	Enables simultaneous current handling and thermal conduction via pins 2 and 4 - improves reliability vs. single-pin alternatives.
Three h_FE bins	BCP56-10T-Q (63–160) offers tighter gain control than standard BCP56T-Q (63–250), reducing base drive variance across production lots.
High P_tot scalability	Power dissipation increases from 0.6 W (standard footprint) to 1.8 W (4-layer + 1 cm² pad), enabling flexible thermal design trade-offs.
Low V_CE(sat)	≤ 500 mV at I_C = 500 mA ensures < 0.25 W conduction loss - critical for thermally constrained linear regulator pass elements.

Applications

Linear Voltage Regulators

MOSFET Drivers

Use Scenario: Pass transistor in adjustable 5–12 V linear regulators powering infotainment microcontrollers.

IC Role / Device Role / Timing Role: NPN series pass element controlling output voltage via base bias; no timing function.

Use Value: Low V_CE(sat) minimizes dropout voltage and thermal load; AEC-Q101 qualification ensures long-term stability in vehicle cabin environments.

Use Scenario: Level-shifting and current-boosting stage driving high-gate-charge automotive MOSFETs.

IC Role / Device Role / Timing Role: Medium-current NPN switch translating logic-level signals to 12 V gate drive with >100 mA peak sourcing.

Use Value: 2 A pulsed I_CM and 155 MHz f_T enable fast turn-on of 10 nF gate loads within < 100 ns.

High-Side Switches

Power Management

Use Scenario: Load switch controlling 12 V lighting or HVAC actuators in body control modules.

IC Role / Device Role / Timing Role: High-side NPN switch with emitter tied to load, collector to supply; requires base pull-up for activation.

Use Value: 80 V V_CEO withstands load-dump transients (ISO 7637-2 Pulse 5a); dual collector pins improve SOA margin during inductive kickback.

Use Scenario: Current-sense amplifier front-end or battery protection circuitry in 24 V commercial vehicle systems.

IC Role / Device Role / Timing Role: Precision current mirror or active load in analog power monitoring paths; operates in linear region.

Use Value: Tight h_FE bin (63–160) ensures consistent current mirroring ratio; low ICBO (<100 nA) preserves accuracy at elevated temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCP56-16T-Q	Higher h_FE bin (100–250) at same V_CE/I_C; otherwise identical ratings and package.	Better suited for low-base-drive designs (e.g., microcontroller GPIO direct drive) where gain consistency above 100 is required.	Select when base current budget is limited and higher gain tolerance is acceptable; not drop-in due to different h_FE distribution.
ZTX653	Same SOT223 package, but 100 V V_CEO, 2 A I_C, and higher P_tot (2 W); h_FE = 100–300 (unbinned).	Supports higher-voltage 48 V systems and heavier loads; lacks AEC-Q101 certification.	Choose for industrial 48 V power supplies where automotive qualification is unnecessary and higher voltage headroom is needed.

Compared with BCP56-10T-Q, BCP56-16T-Q offers higher guaranteed gain for reduced base drive, while ZTX653 trades automotive qualification for higher voltage/current capability - making each suitable for distinct design priorities: gain control, qualification assurance, or raw power handling.

Availability

BCP56-10T-Q is available at Aetrix Electronics and suitable for automotive body control modules, industrial linear regulators, and 24 V power management systems requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant discrete transistors.

Supply support for BCP56-10T-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BCP56T-Q series belongs to Nexperia's AEC-Q101-qualified medium-power transistor product line, engineered specifically for automotive power control applications demanding robustness, thermal resilience, and precise gain binning.

FAQ

What is the difference between BCP56-10T-Q and BCP56T-Q?

BCP56-10T-Q is a binned version of the BCP56T-Q family with guaranteed DC current gain (h_FE) of 63–160 at V_CE = 2 V and I_C = 150 mA, whereas the standard BCP56T-Q spans 63–250. This tighter bin reduces base drive variability in production designs and improves consistency in linear applications like voltage regulation.

Can BCP56-10T-Q be used in high-side switch configurations?

Yes - its 80 V V_CEO rating and dual-collector SOT223 package make it suitable for high-side switching in 24 V automotive systems. When used in emitter-follower configuration, it withstands load-dump transients per ISO 7637-2, and pin 4 must be soldered to a large copper area for thermal stability during inductive load switching.

What is the maximum allowable power dissipation on a standard FR4 PCB?

On a standard single-sided FR4 PCB with tin-plated copper and the manufacturer's recommended footprint, BCP56-10T-Q has a maximum total power dissipation (P_tot) of 0.6 W. Exceeding this requires enhanced thermal design - such as a 1 cm² collector pad (1.0 W), 6 cm² pad (1.3 W), or 4-layer board (1.8 W) - per Table 6 of the datasheet.

Is the SOT223 package lead-free and RoHS compliant?

Yes - BCP56-10T-Q is manufactured using lead-free (Pb-free) die attach and termination materials, and complies with EU RoHS Directive 2011/65/EU and REACH regulations. The device marking "P5610T" and packaging code confirm compliance, and full material declarations are available from Nexperia upon request.

BCP56-10T-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: BCP56T-Q

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 63 @ 150mA, 2V

Power - Max:: 600 mW

Frequency - Transition:: 155MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

BCP56-10T-QF FAQ

1.How can I place an order for BCP56-10T-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP56-10T-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP56-10T-QF reliable?

The price and inventory of BCP56-10T-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP56-10T-QF is usually 5 days.

3.What payment methods are accepted for BCP56-10T-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP56-10T-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP56-10T-QF?

BCP56-10T-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP56-10T-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP56-10T-QF?

For technical support, including BCP56-10T-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP56-10T-QF requirements.

6.How does Aetrix verify that BCP56-10T-QF is sourced from the original manufacturer or authorized distributors?

All BCP56-10T-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP56-10T-QF meets industry standards.

7.What is the process for return or replacement of BCP56-10T-QF?

All BCP56-10T-QF units undergo pre-shipment inspection (PSI). If there is an issue with BCP56-10T-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP56-10T-QF part is unused and in its original packaging.

Return procedure for BCP56-10T-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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