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Nexperia USA Inc. BCP68-25,135

Part No.:
BCP68-25,135
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBCP68-25,135.pdf
Description:
TRANS NPN 20V 2A SOT-223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,990

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Product details

Overview

BCP68-25,135 from Nexperia is a medium-power NPN bipolar junction transistor in SOT223 (SC-73) package, rated for 20 V VCEO, 2 A continuous collector current, and 1.35 W power dissipation on 6 cm² copper pad. It delivers hFE = 160–375 at VCE = 1 V and IC = 500 mA, with low VCE(sat) ≤ 0.6 V at IC = 2 A / IB = 200 mA - used in MOSFET gate driving and linear voltage regulation circuits.

For engineers reviewing the BCP68-25,135 datasheet, BCP68-25,135 pinout, BCP68-25,135 application, or BCP68-25,135 equivalent, key selection criteria include verified DC current gain binning (hFE ≥ 160), thermal resistance Rth(j-a) = 93 K/W under optimized PCB layout, and dual-collector pin configuration enabling high-current switching in compact SMT designs.

Technical Context

The BCP68-25,135 operates as a medium-power NPN switch with open-base VCEO = 20 V and pulsed ICM = 3 A, supporting robust low-side switching in battery-powered systems. Its hFE binning (160–375) ensures predictable base drive requirements across production lots.

Thermal performance is defined by three mounting conditions: standard footprint (Rth(j-a) = 192 K/W), 1 cm² collector pad (125 K/W), and 6 cm² pad (93 K/W). The device exhibits fT = 40–170 MHz and Cc = 22 pF, confirming suitability for moderate-speed switching up to ~100 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 20 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in low-side switch applications.
IC 2 A - Continuous DC collector current rating; supports sustained load switching in power management blocks.
hFE 160–375 at VCE = 1 V, IC = 500 mA - Confirmed current gain bin ensuring stable base drive design for MOSFET drivers.
VCE(sat) ≤ 0.6 V at IC = 2 A, IB = 200 mA - Low saturation voltage minimizes conduction loss in linear regulators and switching nodes.
Ptot 1.35 W at Tamb ≤ 25 °C with 6 cm² copper pad - Enables higher power handling than standard SOT223 without heatsink.
fT 40–170 MHz - Transition frequency confirms usable bandwidth for PWM gate driving up to ~100 kHz with margin.
Rth(j-a) 93 K/W - Thermal resistance with 6 cm² collector pad; enables thermal design for 1.35 W dissipation at ΔT = 125 °C.

Pinout & Package

SOT223 (SC-73) surface-mount plastic package with four leads: two collector terminals (pins 2 and 4), one base (pin 1), and one emitter (pin 3); integrated heatsink tab connected to collector for enhanced thermal transfer.

Pin/Terminal Circuit Role Design Meaning
1 Base Control input requiring IB ≤ 0.4 A; drives transistor into saturation with IC/IB ≤ 10.
2 Collector Main current-carrying terminal; electrically tied to pin 4 and thermal pad for parallel current path and heat sinking.
3 Emitter Reference node for output stage; connects to ground or low-side return path in switching configurations.
4 Collector Second collector terminal; shares internal connection with pin 2 to reduce bond wire inductance and improve current sharing.

Key Features

Feature Design Value
Dual-collector configuration Reduces effective on-resistance and thermal impedance by paralleling internal collector paths in SOT223 footprint.
High hFE bin (160–375) Enables lower base drive current in MOSFET driver stages, reducing MCU GPIO loading and PCB trace losses.
1.35 W power dissipation Supports higher continuous current in linear regulator pass elements without external heatsink when using 6 cm² copper area.
Low VCE(sat) ≤ 0.6 V Minimizes voltage drop and power loss in low-side switch applications operating near 2 A load currents.
FR4-compatible reflow footprint Standardized 7.3 mm × 6.7 mm land pattern (Fig. 10) ensures manufacturable solder joint reliability in high-volume SMT assembly.

Applications

Linear Voltage Regulators MOSFET Drivers

Use Scenario: Used as pass transistor in adjustable LDOs delivering up to 2 A output current with <1 % line/load regulation.

IC Role / Device Role / Timing Role: NPN pass element controlling output voltage via base bias network; operates in linear region with controlled VCE.

Use Value: Delivers 1.35 W dissipation capability at ambient ≤ 25 °C, enabling compact regulator designs without heatsinks.

Use Scenario: Drives N-channel MOSFET gates in motor control H-bridges and DC-DC synchronous rectifiers.

IC Role / Device Role / Timing Role: Low-side NPN switch rapidly charging/discharging gate capacitance with IC = 2 A peak capability.

Use Value: Achieves fast turn-on with hFE ≥ 160 and VCE(sat) ≤ 0.6 V, minimizing gate drive energy loss per switching cycle.

Low-Side Switches Battery-Driven Devices

Use Scenario: Controls 12 V/2 A loads such as solenoids, relays, and LED arrays in industrial control modules.

IC Role / Device Role / Timing Role: Saturated NPN switch turning on/off load current between emitter (GND) and collector (load).

Use Value: Dual-collector pins reduce thermal stress during 2 A continuous operation, extending reliability in unventilated enclosures.

Use Scenario: Powers auxiliary rails in portable medical monitors and handheld test equipment powered by Li-ion batteries.

IC Role / Device Role / Timing Role: Medium-power switch managing battery discharge paths and load isolation with low quiescent current.

Use Value: VCEO = 20 V accommodates 3S Li-ion packs (12.6 V max), while ICM = 3 A supports surge loads like display backlight ignition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BCP56-16,115 VCEO = 80 V, IC = 1 A, hFE = 100–250, SOT223 package Higher voltage rating but lower current capacity; unsuitable for 2 A continuous loads Select only if system requires >20 V blocking with reduced current demand.
ZTX653STZ VCEO = 60 V, IC = 3 A, hFE = 100–300, SOT89 package Higher current and voltage ratings but different thermal pad layout and pinout (3-pin) Choose when board space allows SOT89 and higher VCEO/IC margins are required.

Compared with BCP68-25,135, BCP56-16,115 trades current capability for higher voltage headroom, while ZTX653STZ offers greater current and voltage ratings but requires PCB redesign due to SOT89 footprint and single-collector configuration.

Availability

BCP68-25,135 is available at Aetrix Electronics and suitable for linear voltage regulators, MOSFET drivers, and low-side switches requiring stable component supply in industrial automation, battery-powered instrumentation, and embedded power management systems.

Supply support for BCP68-25,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, and consumer applications.

The BCP68 series belongs to Nexperia's medium-power bipolar transistor product line, engineered for robust switching and linear operation in space-constrained SMT power stages where thermal efficiency and gain consistency are critical.

FAQ

What is the guaranteed hFE range for BCP68-25,135 at IC = 500 mA?

The BCP68-25,135 is binned to guarantee hFE = 160–375 when measured at VCE = 1 V and IC = 500 mA under pulsed conditions (tp ≤ 300 μs, duty cycle ≤ 0.02). This bin ensures predictable base current requirements for gate-driving and regulator applications without gain variation fallback.

Can BCP68-25,135 replace BCP68-16 in existing designs?

No - BCP68-25,135 and BCP68-16 differ in hFE binning: BCP68-25 guarantees minimum hFE = 160, while BCP68-16 guarantees minimum hFE = 85. Substituting may increase required base drive current by up to 2×, risking insufficient saturation in high-current switching nodes.

What is the maximum allowable PCB copper area for thermal optimization?

The 1.35 W power dissipation rating assumes a 6 cm² copper pad connected to the collector terminals (pins 2 and 4) on a single-sided FR4 board. Increasing pad area beyond 6 cm² yields diminishing thermal returns; no derating data is provided for larger pads in the official datasheet Rev. 9.

Does BCP68-25,135 support wave soldering?

Yes - Nexperia provides a dedicated wave soldering footprint (Fig. 11) for SOT223, specifying 1.9 mm lead spacing, 6.2 mm body length, and preferred transport direction aligned with pin 1–3 axis. Thermal profiling must respect peak temperature ≤ 260 °C for ≤ 5 seconds per IPC-J-STD-020.

BCP68-25,135 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 500mA, 1V
Power - Max:
650 mW
Frequency - Transition:
170MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

BCP68-25,135 FAQ

1.How can I place an order for BCP68-25,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP68-25,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP68-25,135 reliable?

The price and inventory of BCP68-25,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP68-25,135 is usually 5 days.

3.What payment methods are accepted for BCP68-25,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP68-25,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP68-25,135?

BCP68-25,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP68-25,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP68-25,135?

For technical support, including BCP68-25,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP68-25,135 requirements.

6.How does Aetrix verify that BCP68-25,135 is sourced from the original manufacturer or authorized distributors?

All BCP68-25,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP68-25,135 meets industry standards.

7.What is the process for return or replacement of BCP68-25,135?

All BCP68-25,135 units undergo pre-shipment inspection (PSI). If there is an issue with BCP68-25,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP68-25,135 part is unused and in its original packaging.

Return procedure for BCP68-25,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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