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Infineon Technologies BCP69E6327

Part No.:
BCP69E6327
Manufacturer:
Infineon Technologies
Category:
Single Bipolar Transistors
Package:
-
Datasheet:
AetrixBCP69E6327.pdf
Description:
POWER BIPOLAR TRANSISTOR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,693

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Product details

Overview

BCP69E6327 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor in SOT223 package, rated for 20 V VCEO, 1 A DC collector current, and 1.5 W total power dissipation at TS = 124 °C, used in low-voltage switching and linear amplification stages of consumer audio amplifiers and power supply control circuits.

For engineers reviewing the BCP69E6327 datasheet, BCP69E6327 pinout, BCP69E6327 application, or BCP69E6327 equivalent, key selection criteria include verified VCE(sat) ≤ 0.5 V at IC = 1 A / IB = 100 mA, hFE ≥ 85 at IC = 500 mA, and thermal resistance RthJS ≤ 17 K/W for board-level thermal design.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined breakdown limits: V(BR)CES = 25 V (IC = 10 µA), V(BR)EBO = 5 V (IE = 10 µA), and ICBO ≤ 100 nA at 25 °C. Its fT = 100 MHz at IC = 100 mA enables stable operation up to mid-VHF band.

The device features pulse-tested AC characteristics (t ≤ 300 µs, D = 2%) and exhibits hFE variation from 60 (IC = 1 A) to 375 (IC = 500 mA, BCP69-25 variant), confirming gain optimization across operating current ranges for both switching and analog use cases.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO20 V - Maximum safe collector-emitter voltage under open-base condition; defines upper rail limit in low-voltage switch designs.
IC (DC)1 A - Continuous collector current rating; supports load switching up to ~12 W at 12 V with adequate heatsinking.
VCE(sat)≤ 0.5 V @ IC = 1 A, IB = 100 mA - Low saturation voltage reduces conduction loss in high-current switching paths.
hFE85–375 - Current gain range across IC = 500 mA variants; enables predictable base drive sizing in amplifier bias networks.
fT100 MHz @ IC = 100 mA, VCE = 5 V - Transition frequency confirms suitability for AF and low-MHz signal amplification without instability.
RthJS≤17 K/W - Junction-to-soldering-point thermal resistance; allows direct thermal modeling from die to PCB copper pour.
Ptot1.5 W @ TS = 124 °C - Total power dissipation limit at specified solder point temperature; sets maximum steady-state power handling.

Pinout & Package

SOT223 package with 4-pin configuration: three functional terminals (B, C, E) plus an exposed collector tab (Pin 4) serving as both electrical connection and primary thermal path to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Base (B)Control input for forward-active and saturation bias; requires current-limited drive due to hFE-dependent base current demand.
Pin 2Collector (C)Main current sink node; electrically and thermally connected to Pin 4 (exposed tab) for enhanced power handling.
Pin 3Emitter (E)Reference terminal for bias network; tied to system ground or negative rail in common-emitter configurations.
Pin 4Collector Tab (C)Exposed metal pad soldered to PCB copper; provides dominant thermal conduction path and low-inductance collector return.

Key Features

FeatureDesign Value
Complementary NPN pairingMatched performance with BCP68 - enables balanced push-pull output stages in Class-B audio amplifiers.
Low VCE(sat)≤ 0.5 V at full 1 A load - minimizes voltage drop and heat generation in saturated-switch applications like relay drivers.
High hFE at mid-current≥ 100 at IC = 500 mA - reduces required base drive current and simplifies bias resistor selection in linear amplifiers.
Thermally robust SOT223RthJS ≤ 17 K/W - supports reliable 1.5 W operation with standard 2-layer PCB copper area (≥ 250 mm²).
Extended temperature rangeTj = –65 to +150 °C - qualified for industrial ambient environments where passive cooling dominates thermal management.

Applications

Audio Amplifier Output StageDC-DC Converter Switch Driver

Use Scenario: Final push-pull stage in battery-powered portable audio amplifiers delivering 1–2 W into 8 Ω loads.

IC Role / Device Role / Timing Role: PNP half of complementary pair providing current sinking capability during negative half-cycle of audio waveform.

Use Value: VCE(sat) ≤ 0.5 V ensures <100 mW conduction loss per device at 1 A peak, preserving battery runtime and minimizing thermal stress.

Use Scenario: High-side switch driver in non-isolated buck converter feedback loop controlling MOSFET gate voltage.

IC Role / Device Role / Timing Role: Linear pass element regulating reference voltage for error amplifier bias; operates in active region for precise voltage tracking.

Use Value: hFE ≥ 85 at 500 mA enables stable 10 mA base current sourcing with <5% gain variation across production lot.

Relay Control InterfaceLinear Voltage Regulator Pass Element

Use Scenario: Solid-state replacement for mechanical relay coils in HVAC control panels requiring 12 V/500 mA actuation.

IC Role / Device Role / Timing Role: Saturated switch interfacing microcontroller GPIO to inductive relay coil; driven with 100 mA base current.

Use Value: Verified VCE(sat) ≤ 0.5 V prevents >500 mW self-heating during continuous 100% duty cycle operation.

Use Scenario: Series pass transistor in adjustable 3-terminal linear regulator supplying 5 V/1 A to FPGA core logic.

IC Role / Device Role / Timing Role: Main current-handling element dissipating up to 1.2 W when input is 12 V; biased in active region for regulation.

Use Value: RthJS ≤ 17 K/W allows safe operation at Tj = 135 °C with 200 mm² copper pour, meeting industrial reliability targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BCP69-16Same die, tighter hFE bin (100–250 @ IC = 500 mA); identical pinout and ratings.No functional difference; optimized for designs requiring guaranteed minimum gain stability across temperature.Select when hFE consistency matters more than cost - e.g., precision bias networks in instrumentation amps.
MJD127GTO-252 package; higher VCEO = 80 V, lower fT = 3 MHz; hFE = 30–120 @ IC = 1 A.Not suitable for high-frequency AF amplification; better for high-voltage, low-speed switching (e.g., motor control).Choose only if board layout requires TO-252 footprint or system voltage exceeds 25 V - not a drop-in replacement.

Compared with BCP69-16, BCP69E6327 offers broader hFE tolerance (85–375) at lower cost, while MJD127G trades frequency response and thermal efficiency for higher voltage capability - making BCP69E6327 optimal for compact, thermally constrained AF and switching applications below 25 V.

Availability

BCP69E6327 is available at Aetrix Electronics and suitable for audio amplifier output stages, relay interface circuits, and linear voltage regulator pass elements requiring stable component supply with consistent SOT223 packaging and reel-based logistics.

Supply support for BCP69E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949.

BCP69E6327 belongs to Infineon's legacy bipolar transistor product line designed for cost-sensitive, high-reliability general-purpose analog and switching applications in consumer, industrial, and automotive auxiliary systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature Tj is 150 °C, as specified in the Infineon datasheet. Operation above this value risks permanent degradation of hFE and increased leakage. Derating is required above TS = 124 °C, where Ptot decreases linearly to zero at 150 °C junction temperature.

Can BCP69E6327 be used as a direct replacement for BCP69-25?

Yes - BCP69E6327 uses the same die as BCP69-25 and shares identical electrical specifications including hFE = 160–375 at IC = 500 mA. The "E6327" suffix denotes tape-and-reel packaging (1,000 pcs/reel, ø180 mm), not a parametric variant.

Is the exposed collector tab (Pin 4) electrically isolated from other pins?

No - Pin 4 is internally bonded to Pin 2 (collector) and forms a single low-impedance collector node. It must be soldered to a PCB copper area designated as collector potential and cannot serve as a heatsink ground unless the collector circuit is referenced to system ground.

Does BCP69E6327 meet RoHS and REACH compliance requirements?

Yes - Infineon certifies BCP69E6327 as RoHS-compliant (2011/65/EU) and REACH-conformant (EC 1907/2006), with lead-free terminations and halogen-free molding compound, as documented in Infineon's material declarations dated 2022 and later.

BCP69E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

BCP69E6327 FAQ

1.How can I place an order for BCP69E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCP69E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCP69E6327 reliable?

The price and inventory of BCP69E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCP69E6327 is usually 5 days.

3.What payment methods are accepted for BCP69E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCP69E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCP69E6327?

BCP69E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCP69E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCP69E6327?

For technical support, including BCP69E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCP69E6327 requirements.

6.How does Aetrix verify that BCP69E6327 is sourced from the original manufacturer or authorized distributors?

All BCP69E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCP69E6327 meets industry standards.

7.What is the process for return or replacement of BCP69E6327?

All BCP69E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BCP69E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCP69E6327 part is unused and in its original packaging.

Return procedure for BCP69E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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