Infineon Technologies BCR 108F E6327

Overview

BCR 108F E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, and AEC-Q101 qualification.

For engineers reviewing the BCR 108F E6327 datasheet, BCR 108F E6327 pinout, BCR 108F E6327 application, or BCR 108F E6327 equivalent, key selection criteria include input threshold voltages (V_i(on) = 0.5–1.1 V, V_i(off) = 0.4–0.8 V), thermal resistance (R_thJS ≤ 240 K/W), and SOT23 package compatibility for space-constrained PCB layouts.

Technical Context

This digital transistor integrates two precision bias resistors to enable direct logic-level drive without external components-R1 provides base current path, while R2 ensures reliable turn-off by shunting leakage. Its h_FE ≥ 70 at I_C = 5 mA/V_CE = 5 V supports stable saturation in low-power switching nodes.

The device operates across −65 °C to +150 °C junction temperature range and delivers f_T = 170 MHz, enabling high-speed switching in signal conditioning and level-shifting applications where propagation delay and input impedance matching matter.

Key Specifications

Pinout & Package

BCR 108F E6327 uses the SOT23-3 surface-mount package (JEDEC TO-236AB), with 1.3 mm × 2.9 mm footprint and 1.15 mm height. Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BCR 108F E6327, BCR118F offers higher voltage headroom and reduced base loading, while NSVD112DXV6T1G enables high-side operation but requires inverted logic drive-neither is pin-compatible, and both require schematic review for bias network alignment.

Availability

BCR 108F E6327 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC I/O expansion, and consumer appliance motor drivers requiring stable component supply and AEC-Q101 compliance.

Supply support for BCR 108F E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification aligned to ISO/TS 16949.

BCR 108F E6327 belongs to Infineon's BCR family of digital transistors, engineered specifically for simplified logic-driven switching in cost-sensitive, high-reliability automotive and industrial control applications.

FAQ

What is the maximum allowable base drive current for reliable operation?

The BCR 108F E6327 does not specify a maximum base current limit, but design practice limits I_B to ≤ 5 mA to avoid exceeding the 200 mW total power dissipation at T_S ≤ 102 °C. At V_i(on) = 1.1 V and R1 = 2.2 kΩ, typical I_B is ~0.5 mA with 3.3 V drive-well within safe margins. Higher drive voltages require series limiting resistors.

Can this transistor replace a standard BJT like BC847 in existing designs?

No-BCR 108F E6327 is not a drop-in replacement for BC847 due to its integrated bias network. Removing external base resistors would cause uncontrolled conduction. To retrofit, remove the BC847's base resistor and verify that the logic high voltage exceeds V_i(on) (0.5–1.1 V) and that the logic low sinks below V_i(off) (0.4–0.8 V) reliably.

Is the SOT23 package lead-free and RoHS-compliant?

Yes-BCR 108F E6327 is explicitly marked Pb-free and RoHS compliant per EU Directive 2011/65/EU. The device uses matte tin (Sn) plating on copper leads, with no exemptions claimed. Full material declarations and test reports are available via Infineon's Eco Reports portal using order code BCR108FE6327.

How does thermal resistance change when mounted on a 2-layer versus 4-layer PCB?

R_thJS ≤ 240 K/W is measured from junction to soldering point under JEDEC-standard test board conditions (2S2P). On a 2-layer board with minimal copper, R_thJA may exceed 350 K/W; on a 4-layer board with internal ground/power planes and thermal vias, R_thJA can improve to ~200 K/W. Use AN077 for exact calculation based on your layout.