Infineon Technologies BCR 108L3 E6327

Overview

BCR 108L3 E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, and AEC-Q101 qualification.

For engineers reviewing the BCR 108L3 E6327 datasheet, BCR 108L3 E6327 pinout, BCR 108L3 E6327 application, or BCR 108L3 E6327 equivalent, this part supports reliable low-side switching in 12 V automotive logic interfaces, GPIO-level translation, and compact DC-DC converter enable control where built-in resistor ratio (R1/R2 ≈ 0.047) simplifies PCB layout and reduces component count.

Technical Context

This digital transistor integrates two precision bias resistors to form a single-input, single-output active switch with defined turn-on/off thresholds (V_i(on) = 0.5–1.1 V, V_i(off) = 0.4–0.8 V) and eliminates external base drive components. Its h_FE ≥ 70 at I_C = 5 mA ensures robust saturation under typical microcontroller output drive conditions.

The device operates across –65 °C to +150 °C junction temperature and delivers f_T = 170 MHz, enabling stable high-speed switching up to ~10 MHz in buffered gate-drive applications. Thermal resistance R_thJS ≤ 240 K/W (SOT23) supports continuous operation at P_tot = 200 mW with T_S ≤ 102 °C.

Key Specifications

Pinout & Package

BCR 108L3 E6327 is housed in a Pb-free, RoHS-compliant SOT23 package (JEDEC TO-236AB), with standardized 3-pin configuration and 1.3 mm pitch. Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor switching applications.

Compared with BCR108L3 E6327, BCR198E6327 offers greater voltage safety margin but lower h_FE (≥50), while NSVD120DP033T1G provides functional complementarity rather than drop-in replacement-requiring circuit topology revision for high-side use.

Availability

BCR 108L3 E6327 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and consumer appliance control panels requiring stable component supply and AEC-Q101 assurance.

Supply support for BCR 108L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

BCR108 belongs to Infineon's BCR family of digital transistors engineered for space-constrained, high-reliability switching in automotive and industrial environments where simplified drive architecture and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable base-emitter reverse voltage for BCR 108L3 E6327?

The datasheet specifies V_i(rev) = 5 V - this is the absolute maximum reverse voltage across the integrated input network (i.e., between Pin 1 and Pin 2). Exceeding this risks permanent damage to the internal R2 resistor or emitter-base junction. Designers must ensure no external circuit applies >5 V reverse bias during hot-swap or fault conditions.

Can BCR 108L3 E6327 drive a 100 mA relay coil directly from a 3.3 V MCU GPIO?

Yes - with V_i(on) ≤ 1.1 V and h_FE ≥ 70, a 3.3 V GPIO sourcing ≥2 mA can fully saturate the transistor. At I_C = 100 mA, required I_B is ≤1.43 mA, well within typical MCU output capability. Confirm V_CE(sat) stays ≤0.3 V using the actual relay coil resistance and supply voltage.

Is thermal pad exposure required for BCR 108L3 E6327 in SOT23 layout?

No thermal pad is present in the standard SOT23 outline for this part. The package uses only three perimeter leads; thermal dissipation relies on copper area connected to Pin 2 (Emitter) and Pin 3 (Collector). For 200 mW operation at 85 °C ambient, ≥25 mm² of 1 oz copper per pin is recommended per Infineon AN077 guidelines.

Does BCR 108L3 E6327 support PWM frequencies above 1 MHz?

While f_T = 170 MHz suggests high-frequency capability, practical PWM use is limited by stored charge and C_cb = 2 pF. At I_C = 50 mA, measured t_r/t_f is ~80 ns - supporting clean 1–5 MHz PWM in LED drivers or gate drives. Above 5 MHz, edge distortion increases due to RC time constant of R1/C_be; add external base resistor if precise timing is critical.