Infineon Technologies BCR 108T E6327

Overview

BCR 108T E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control modules. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA / I_B = 0.5 mA, h_FE ≥ 70, and AEC-Q101 qualification.

For engineers reviewing the BCR 108T E6327 datasheet, BCR 108T E6327 pinout, BCR 108T E6327 application, or BCR 108T E6327 equivalent, this part supports reliable low-side switching in 12 V automotive body electronics, logic-level interfacing between MCU GPIOs and relay/LED loads, and space-constrained PCB designs requiring built-in biasing.

Technical Context

This digital transistor integrates two precision resistors to enable single-pin base drive-eliminating external bias components while maintaining predictable turn-on/off thresholds (V_i(on) = 0.5–1.1 V, V_i(off) = 0.4–0.8 V). Its SOT23 package supports surface-mount assembly and thermal dissipation up to 200 mW at T_S ≤ 102 °C.

The device operates across −65 °C to +150 °C junction temperature range, with C_cb = 2 pF and f_T = 170 MHz, enabling stable performance in high-speed digital switching and noise-immune signal conditioning applications where discrete resistor-transistor networks would otherwise increase layout complexity and variance.

Key Specifications

Pinout & Package

SOT23-3 package: compact, thermally efficient, JEDEC-standard surface-mount outline with gull-wing leads; footprint compatible with automated pick-and-place and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor switching applications.

Compared with BCR108T E6327, BCR198T offers extended voltage capability but reduced input sensitivity, while NSVD120DP033T1G enables high-side configurations but demands logic inversion-neither is pin-compatible, and all require schematic review for bias network alignment.

Availability

BCR 108T E6327 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, USB-C power delivery interfaces, and smart home sensor hubs requiring stable component supply with AEC-Q101 assurance.

Supply support for BCR 108T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification aligned to ISO/TS 16949.

The BCR series belongs to Infineon's automotive-qualified digital transistor product line, engineered specifically for simplified, robust, and space-efficient switching in safety-critical and thermally demanding environments.

FAQ

What is the maximum continuous collector current for BCR 108T E6327?

The absolute maximum continuous collector current is 100 mA at T_S ≤ 102 °C. Derating applies above this temperature: total power dissipation drops linearly to zero at 150 °C junction temperature. Pulse operation allows higher peak currents if duty cycle and pulse width remain within limits defined by R_thJS ≤ 240 K/W.

Does BCR 108T E6327 require an external base resistor?

No. It integrates R1 = 2.2 kΩ and R2 = 47 kΩ internally, enabling direct connection of a microcontroller GPIO to the base pin. This eliminates external bias components, reduces PCB area, and improves consistency across production units without resistor tolerance stacking.

Is BCR 108T E6327 suitable for 24 V automotive applications?

Yes. With V_CEO = 50 V and AEC-Q101 qualification, it supports 24 V nominal systems including load dump transients (up to ~40 V). Thermal design must ensure T_J stays below 150 °C, especially under sustained 100 mA load at elevated ambient temperatures.

How does the input on voltage (V_i(on)) vary with temperature?

V_i(on) ranges from 0.5 V to 1.1 V at 25 °C, and decreases slightly at higher temperatures-typically by ~1.5 mV/°C-due to base-emitter junction behavior. Full characterization across −40 °C to +125 °C is provided in Figure 4 of the datasheet, confirming reliable turn-on down to 0.4 V at 125 °C.