Infineon Technologies BCR108WH6327XTSA1

Overview

BCR108WH6327XTSA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, h_FE ≥ 70, and AEC-Q101 qualification.

For engineers reviewing the BCR108WH6327XTSA1 datasheet, BCR108WH6327XTSA1 pinout, BCR108WH6327XTSA1 application, or BCR108WH6327XTSA1 equivalent, this part serves as a pre-biased NPN switch optimized for low-power logic-level interfacing, microcontroller GPIO load driving, and automotive body electronics where space-constrained SOT323 packaging and guaranteed turn-on/off thresholds are critical.

Technical Context

This device integrates two matched resistors to form a single-transistor inverter with defined input threshold behavior: Vi(on) = 0.5–1.1 V and Vi(off) = 0.4–0.8 V at specified test conditions. Its internal R1/R2 ratio of 0.047 enables predictable base current sourcing without external components.

The SOT323 package delivers R_thJS ≤ 105 K/W and supports continuous operation up to T_J = 150 °C, with P_tot = 250 mW at T_S ≤ 124 °C - enabling reliable use in thermally constrained PCB layouts typical of automotive door modules and sensor signal conditioning circuits.

Key Specifications

Pinout & Package

SOT323 package: 3-pin surface-mount plastic case with gull-wing leads, footprint compatible with standard pick-and-place equipment and reflow profiles. Dimensions per Infineon outline EHA07174.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN digital transistor applications.

Compared with BCR108WH6327XTSA1, BCR118WH6327XTSA1 extends voltage headroom for next-gen 48 V architectures, while NSV10800T1G trades automotive qualification for broader h_FE tolerance - making the original optimal for AEC-Q101–mandated 12/24 V switching where thermal and threshold stability are prioritized.

Availability

BCR108WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, HVAC status indication, and microcontroller GPIO buffering requiring stable component supply and long-term lifecycle support.

Supply support for BCR108WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality systems certified to ISO/TS 16949.

This part belongs to Infineon's BCR series of digital transistors - engineered specifically for automotive and industrial signal switching applications where integrated biasing, AEC-Q101 compliance, and thermal resilience are mandatory design requirements.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature T_J is 150 °C. Operation must remain within this limit under all conditions, including ambient temperature, board thermal resistance, and power dissipation. Derating curves in the datasheet define permissible P_tot versus solder point temperature (T_S ≤ 124 °C for BCR108W).

Can BCR108WH6327XTSA1 be used in linear amplification mode?

No - this device is optimized for switching operation only. Its integrated bias resistors and specified h_FE range are characterized for saturated and cutoff states, not active-region linearity. For analog amplification, discrete transistors without built-in resistors (e.g., BC847) are recommended.

Is the SOT323 package lead-free and RoHS compliant?

Yes - BCR108WH6327XTSA1 uses a Pb-free (RoHS-compliant) package with matte tin-plated leads. The device meets EU RoHS Directive 2011/65/EU and is marked accordingly on reel packaging and die surface.

How does the internal R1/R2 network affect input current requirements?

The R1/R2 network draws approximately 1.1 mA at V_i = 2.5 V (calculated as V_i/R1), enabling direct connection to 3.3 V or 5 V logic outputs without external current limiting. This simplifies design and guarantees consistent base drive across process and temperature variations.