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Infineon Technologies BCR108WH6433XTMA1
- Part No.:
- BCR108WH6433XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BCR108WH6433XTMA1.pdf
- Description:
- TRANS PREBIAS NPN 50V SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:3,218
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Product details
Overview
BCR108WH6433XTMA1 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, and AEC-Q101 qualification.
For engineers reviewing the BCR108WH6433XTMA1 datasheet, BCR108WH6433XTMA1 pinout, BCR108WH6433XTMA1 application, or BCR108WH6433XTMA1 equivalent, this part serves as a pre-biased switch optimized for low-power logic-level interfacing, ECU input conditioning, and LED/relay driver stages where board space and external resistor count must be minimized.
Technical Context
This device integrates two matched NPN transistors in a single SOT363 (SC-88) package - confirmed by pin configuration diagrams showing six terminals (B1, E1, C1, C2, B2, E2) and marking "BCR108S" in documentation. Its internal resistor network enables direct TTL/CMOS-level drive without external base resistors.
The BCR108W variant operates up to TS = 124°C with Ptot = 250 mW and RthJS ≤ 105 K/W, supporting high-reliability automotive ambient conditions. Electrical characteristics are specified at TA = 25°C with pulse testing (t < 300 µs, D < 2%) for saturation and gain parameters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports 24 V automotive supply rails with margin against load-dump transients |
| IC | 100 mA - sufficient for driving small relays, LEDs, or logic inputs without external amplification |
| VCE(sat) | ≤ 0.3 V @ IC/IB = 20 - minimizes power loss and self-heating in saturated switching mode |
| R1 / R2 | 2.2 kΩ / 47 kΩ - sets reliable turn-on threshold (~0.5–1.1 Vi(on)) for 3.3 V/5 V logic compatibility |
| fT | 170 MHz typ. - enables stable operation in PWM frequencies up to ~10 MHz with adequate gain margin |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronics including temperature cycling and HTRB |
| Ptot | 250 mW @ TS ≤ 124°C - enables use in compact PCB layouts with limited copper area for thermal dissipation |
Pinout & Package
BCR108WH6433XTMA1 is housed in a RoHS-compliant SOT363 (SC-88) surface-mount package measuring 2.13 × 1.35 × 1.0 mm, with gull-wing leads and moisture sensitivity level MSL3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B1) | Base of TR1 | Input node for first transistor; connected internally to R1/R2 divider network |
| 2 (E1) | Emiter of TR1 | Common emitter reference for TR1; tied to PCB ground plane in typical switch configuration |
| 3 (C1) | Collector of TR1 | Output node for TR1; drives load between VCC and C1 when TR1 is active |
| 4 (C2) | Collector of TR2 | Independent output node for second transistor; enables dual-channel switching in same footprint |
| 5 (B2) | Base of TR2 | Second input node; electrically isolated from B1 but matched in gain and VBE per datasheet |
| 6 (E2) | Emiter of TR2 | Common emitter for TR2; may be tied separately or shared with E1 depending on circuit topology |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched NPN transistors | Single SOT363 package contains two thermally coupled, process-matched transistors for precise current mirroring or differential switching |
| Integrated bias network | R1 = 2.2 kΩ and R2 = 47 kΩ eliminate need for two external resistors per channel, reducing BOM count and layout area |
| AEC-Q101 qualification | Validated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces |
| Low VCE(sat) | ≤ 0.3 V ensures <10 mW conduction loss at 10 mA load, critical for battery-powered or thermally constrained modules |
| High fT | 170 MHz typical transition frequency supports clean edge integrity in 1–5 MHz PWM-driven loads like solenoids or status indicators |
Applications
| Automotive Door Module Input Conditioning | Industrial PLC Digital Input Stage |
|---|---|
Use Scenario: Detecting door ajar switch closure in 12 V vehicle systems with noise immunity and ESD protection. IC Role / Device Role / Timing Role: Acts as a pre-biased level translator and current limiter between mechanical switch and microcontroller GPIO. Use Value: Eliminates external pull-up and series resistor; withstands ±8 kV contact ESD per IEC 61000-4-2 due to integrated R1/R2 current limiting. | Use Scenario: Converting 24 V DC field signals (e.g., proximity sensors) to 3.3 V logic levels for FPGA or ARM-based controllers. IC Role / Device Role / Timing Role: Functions as a robust, resistor-isolated input buffer with defined VIH/VIL thresholds. Use Value: R1/R2 ratio ensures reliable turn-on at ≥0.5 V and turn-off at ≤0.4 V, rejecting common-mode noise up to 2 Vpp. |
| LED Status Indicator Driver | Relay Coil Interface Circuit |
Use Scenario: Driving multiple panel-mounted LEDs from low-current MCU outputs in medical or test equipment. IC Role / Device Role / Timing Role: Provides current gain and voltage translation while limiting peak base current to protect GPIO pins. Use Value: Enables direct connection to 3.3 V GPIO without risk of overcurrent; VCE(sat) ≤ 0.3 V keeps LED forward voltage drop predictable. | Use Scenario: Switching 12 V/24 V relay coils in HVAC control panels with minimal PCB real estate. IC Role / Device Role / Timing Role: Serves as a saturated switch with flyback diode integration support via collector-emitter path. Use Value: 100 mA IC rating covers standard 10–50 mA relay coils; low RthJS (≤105 K/W) prevents thermal shutdown during continuous duty. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR198WH6433XTMA1 | Higher hFE (min 160 vs. 70), same R1/R2, identical SOT363 package | Better suited for low-drive-strength MCUs (e.g., ultra-low-power ARM Cortex-M0+) requiring higher current gain | Select when base drive current is limited to <0.1 mA and load current remains ≤100 mA |
| NSVD2101PT3G | Single NPN digital transistor (SOT-23), R1 = 4.7 kΩ, R2 = 47 kΩ, no dual-transistor option | Lacks dual-channel capability; lower Ptot (200 mW) and no AEC-Q101 qualification | Choose only for cost-sensitive non-automotive applications where single-channel operation suffices |
Compared with BCR108WH6433XTMA1, BCR198WH6433XTMA1 offers higher gain for marginal drive conditions, while NSVD2101PT3G trades dual functionality and automotive qualification for lower unit cost in consumer-grade designs.
Availability
BCR108WH6433XTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial programmable logic controller (PLC) input stages, and medical device LED driver circuits requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BCR108WH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.
The BCR108 family belongs to Infineon's automotive-qualified digital transistor product line, engineered specifically for robust, space-efficient signal interfacing in harsh-environment electronic control units.
FAQ
What is the maximum continuous collector current for BCR108WH6433XTMA1?
The absolute maximum continuous collector current is 100 mA per transistor, as specified in the "Maximum Ratings" table under IC. This rating applies at TS ≤ 124°C for the BCR108W variant. Derating is required above that case temperature, following the Ptot vs. TS curve in datasheet Figure 5.
Can BCR108WH6433XTMA1 replace a standard BJT like BC847 in a switching application?
Yes, but only if the circuit design accounts for its built-in bias resistors. Unlike BC847, BCR108WH6433XTMA1 requires no external base resistor - connecting the input signal directly to Pin 1 (B1) activates TR1. Using it as a drop-in replacement without adjusting drive voltage or removing external resistors will cause incorrect biasing or saturation failure.
Is the dual-transistor structure internally isolated or electrically shared?
The two transistors (TR1 and TR2) are electrically isolated - their bases, emitters, and collectors are fully separate terminals (Pins 1–3 and 4–6). The datasheet confirms "two internally isolated transistors with good matching," and the pinout diagram shows no shared nodes. Thermal coupling exists due to monolithic die placement, but electrical paths remain independent.
Does BCR108WH6433XTMA1 support PWM switching at 100 kHz?
Yes - with fT = 170 MHz typical and VCE(sat) stable up to 100 mA, it supports clean 100 kHz PWM switching of resistive or moderately inductive loads (e.g., LEDs, small solenoids). For highly inductive loads like relay coils, ensure external flyback protection is used, as the device itself does not integrate clamp diodes.
BCR108WH6433XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- 170 MHz
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BCR108WH6433XTMA1 FAQ
1.How can I place an order for BCR108WH6433XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR108WH6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR108WH6433XTMA1 reliable?
The price and inventory of BCR108WH6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR108WH6433XTMA1 is usually 5 days.
3.What payment methods are accepted for BCR108WH6433XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR108WH6433XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR108WH6433XTMA1?
BCR108WH6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR108WH6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR108WH6433XTMA1?
For technical support, including BCR108WH6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR108WH6433XTMA1 requirements.
6.How does Aetrix verify that BCR108WH6433XTMA1 is sourced from the original manufacturer or authorized distributors?
All BCR108WH6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR108WH6433XTMA1 meets industry standards.
7.What is the process for return or replacement of BCR108WH6433XTMA1?
All BCR108WH6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR108WH6433XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR108WH6433XTMA1 part is unused and in its original packaging.
Return procedure for BCR108WH6433XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR108WH6433XTMA1 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
Nexperia USA Inc.
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