Infineon Technologies BCR 112L3 E6327

Overview

BCR 112L3 E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = R2 = 4.7 kΩ), designed for switching, inverting, interfacing, and driver circuits in compact consumer and industrial electronics. It features dual galvanically isolated transistors in one SOT-323 (SC-70) package, 50 V V_CEO, 100 mA I_C, and 250 mW P_tot at T_S ≤ 135 °C.

For engineers reviewing the BCR 112L3 E6327 datasheet, BCR 112L3 E6327 pinout, BCR 112L3 E6327 application, or BCR 112L3 E6327 equivalent, key selection criteria include built-in resistor matching, dual-transistor isolation, thermal derating behavior, and low-V_CE(sat) performance under 10 mA drive conditions.

Technical Context

This device integrates two matched NPN transistors with monolithically embedded base bias networks-each with 4.7 kΩ input resistors-enabling independent switching control without external bias components. Its dual-die structure supports push-pull or complementary logic-level translation in space-constrained PCB layouts.

Thermal design is defined by a junction-to-soldering-point resistance of ≤60 K/W and a maximum junction temperature of 150 °C, enabling stable operation up to 135 °C case temperature before power derating begins. Electrical behavior is characterized at 25 °C with guaranteed h_FE ≥ 20 at I_C = 5 mA and V_CE = 5 V.

Key Specifications

Pinout & Package

BCR 112L3 E6327 is housed in a SOT-323 (SC-70) surface-mount package with six terminals arranged in a single-row configuration. The package supports reflow soldering and provides galvanic isolation between the two internal transistors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN digital transistor applications.

Compared with BCR 112T E6327, the BCR 112L3 E6327 offers superior thermal performance (≤60 K/W vs. ≤165 K/W) for continuous operation, while NSVD2102PT3G trades integration for lower saturation voltage and simpler layout-making it preferable only in single-channel, high-efficiency cases.

Availability

BCR 112L3 E6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface modules, push-pull logic translators, and small-signal relay drivers requiring stable component supply across production lifecycles.

Supply support for BCR 112L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BCR 112L3 belongs to Infineon's BCR series of digital transistors-designed specifically for reducing bill-of-materials count and PCB area in cost-sensitive, high-volume consumer and industrial control applications.

FAQ

What is the maximum operating temperature for continuous use?

The BCR 112L3 E6327 supports continuous operation up to a case temperature (T_S) of 135 °C before power derating begins. Its maximum junction temperature is 150 °C, and thermal resistance from junction to soldering point is ≤60 K/W, enabling reliable performance in thermally constrained environments such as sealed enclosures or stacked PCB assemblies.

Can both transistors be used simultaneously without interference?

Yes-the two NPN transistors are galvanically isolated within the monolithic die, with separate emitter, base, and collector terminals. No shared current paths or substrate coupling exist between them, ensuring independent switching behavior and eliminating crosstalk even during simultaneous high-speed transitions.

Is external base resistor required for standard GPIO drive?

No-each transistor includes integrated 4.7 kΩ base resistors (R1 and R2), allowing direct connection to 3.3 V or 5 V logic outputs. For example, a 3.3 V MCU GPIO sourcing 0.5 mA drives the base fully into saturation without additional components, simplifying layout and improving reliability.

How does its V_CE(sat) compare to discrete transistor + resistor solutions?

At I_C = 10 mA and I_B = 0.5 mA, V_CE(sat) is guaranteed ≤ 0.3 V-comparable to well-biased discrete NPNs. The integrated resistors ensure consistent base current despite process variation, yielding tighter V_CE(sat) distribution across production lots than hand-selected discrete alternatives.