Infineon Technologies BCR 112T E6327

Overview

BCR 112T E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = R2 = 4.7 kΩ), designed for switching, inverting, interfacing, and driver circuits in compact consumer and industrial electronics. It features dual galvanically isolated transistors in one SOT-23 package, 50 V V_CEO, 100 mA I_C, and 250 mW P_tot at T_S ≤ 109 °C.

For engineers reviewing the BCR 112T E6327 datasheet, BCR 112T E6327 pinout, BCR 112T E6327 application, or BCR 112T E6327 equivalent, key selection criteria include input threshold voltage (V_i(on) = 1–2.5 V), saturation performance (V_CE(sat) ≤ 0.3 V @ I_C = 10 mA), resistor matching (R1/R2 = 0.9–1.1), and thermal resistance (R_thJS ≤ 165 K/W).

Technical Context

This dual-digital-transistor device integrates two matched NPN transistors with monolithically embedded base bias networks-each with 4.7 kΩ input resistors-enabling direct logic-level drive without external components. Its SOT-23 package supports high-density PCB layouts while maintaining galvanic isolation between channels.

The device operates as a current-controlled switch with defined turn-on/off thresholds (V_i(on) ≤ 2.5 V, V_i(off) ≥ 0.8 V), h_FE ≥ 20 at I_C = 5 mA, and f_T = 140 MHz, making it suitable for medium-speed digital signal routing and level translation up to ~10 MHz.

Key Specifications

Pinout & Package

BCR 112T E6327 is housed in a standard SOT-23 (TSFP-3) plastic surface-mount package with 3 terminals per transistor channel, configured as a dual isolated unit. Pin 1 = Base of first transistor (B1), Pin 2 = Emitter of first transistor (E1), Pin 3 = Collector of first transistor (C1); no connection to pins 4–6 (not present in SOT-23).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BCR 112T E6327, the BCR 112 E6327 trades thermal efficiency for legacy compatibility, while the BCR 112U E6327 offers better heat dissipation in a slightly larger package-making BCR 112T the optimal balance of size, power, and thermal resistance for space-constrained consumer electronics.

Availability

BCR 112T E6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, industrial sensor interfaces, and power supply enable control requiring stable component supply and long-term production continuity.

Supply support for BCR 112T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BCR112 series belongs to Infineon's digital transistor product line, engineered specifically for replacing discrete BJT + resistor combinations in cost-sensitive, high-volume digital interface applications.

FAQ

Is BCR 112T E6327 pin-compatible with standard SOT-23 NPN transistors?

No-it uses a proprietary dual-transistor pinout (B1/E1/C1) distinct from single-transistor SOT-23 devices like BC847 or MMBT3904. Pin 1 is Base of TR1, not Collector; substituting without schematic review risks incorrect biasing or damage.

What is the maximum operating frequency for switching applications?

The device supports reliable digital switching up to 10 MHz, based on its 140 MHz f_T, measured V_CE(sat) stability, and documented pulse-load behavior. For >5 MHz operation, ensure layout minimizes parasitic capacitance and maintains V_i(on)/V_i(off) margins.

Can BCR 112T E6327 drive a 24 V relay coil directly?

Yes-if the relay coil draws ≤100 mA and has DC resistance ≥240 Ω. With V_CE(sat) ≤ 0.3 V, power dissipation stays below 250 mW at T_S ≤ 109 °C. Add a flyback diode across the coil to suppress inductive kickback.

Does the internal resistor network support PWM dimming of LEDs?

Yes-the matched R1/R2 values and fast V_CE transition (confirmed by f_T and pulse-load graphs) allow clean 1–10 kHz PWM operation. Avoid duty cycles <1% or >99% to prevent thermal imbalance between channels due to differing conduction time.