Infineon Technologies BCR 114F E6327

Overview

BCR 114F E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 4.7 kΩ, R2 = 10 kΩ), designed for low-power switching and interface applications. It supports 50 V V_CEO, 100 mA I_C, 250 mW P_tot at T_S ≤ 128 °C, and exhibits V_CE(sat) ≤ 0.3 V at I_C = 10 mA / I_B = 0.5 mA - used in logic-level signal translation and LED driver stages.

For engineers reviewing the BCR 114F E6327 datasheet, BCR 114F E6327 pinout, BCR 114F E6327 application, or BCR 114F E6327 equivalent, key selection criteria include input threshold compatibility (V_i(on) ≤ 1.4 V, V_i(off) ≥ 0.5 V), thermal resistance (R_thJS ≤ 90 K/W), and SC75 package footprint constraints in space-constrained PCB layouts.

Technical Context

This digital transistor integrates two on-chip base bias resistors to eliminate external components in saturated-switch configurations. Its fixed R1/R2 ratio (0.47 typ.) ensures stable turn-on/turn-off behavior under varying supply conditions and temperature drift.

Designed for common-emitter switching, it delivers h_FE ≥ 30 at I_C = 5 mA / V_CE = 5 V and f_T = 160 MHz, enabling reliable operation up to mid-frequency digital signal routing without external amplification.

Key Specifications

Pinout & Package

BCR 114F E6327 is housed in a SC75 (SOT-416) surface-mount package measuring 1.6 mm × 0.8 mm × 0.5 mm, optimized for high-density PCB assembly and automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BCR114T E6327 and NSVD112LT1G, the BCR 114F E6327 offers superior thermal resistance and lower input threshold - making it optimal for compact, low-voltage, high-duty-cycle digital switching where reliability at elevated case temperatures is critical.

Availability

BCR 114F E6327 is available at Aetrix Electronics and suitable for LED driver stages, microcontroller interfaces, relay driver circuits, and logic inverters requiring stable component supply and tight parametric consistency across production batches.

Supply support for BCR 114F E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification (IATF 16949, ISO 9001).

The BCR series belongs to Infineon's family of digital transistors engineered for simplified logic interfacing and low-power switching - targeting cost-sensitive, space-constrained applications in consumer, industrial, and automotive electronics.

FAQ

What is the maximum junction temperature for BCR 114F E6327?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in the Infineon datasheet. Operation above this value risks permanent device degradation. Derating begins at case temperature >128 °C, where P_tot linearly decreases to zero at 150 °C.

Can BCR 114F E6327 replace a standard NPN transistor like BC847 in switching applications?

No - BCR 114F E6327 has integrated base resistors and is not a direct replacement for discrete-base transistors. Using it without accounting for R1/R2 will cause incorrect biasing. It replaces BC847 + two external resistors, not the transistor alone.

Is the SC75 package of BCR 114F E6327 compatible with standard SOT-23 pick-and-place equipment?

Yes - SC75 (SOT-416) shares identical tape-and-reel dimensions (E6327: 180 mm reel, 3,000 pcs) and land pattern pitch (0.65 mm) with SOT-23, enabling use with standard feeders and vision alignment systems, though pad width differs slightly (0.4 mm vs. 0.5 mm).

Does BCR 114F E6327 support PWM-driven loads?

Yes - its 160 MHz f_T and ≤ 0.3 V V_CE(sat) support PWM frequencies up to 10 MHz with minimal switching loss. For 1–100 kHz LED dimming, thermal rise remains within limits due to R_thJS ≤ 90 K/W and low conduction loss.