Infineon Technologies BCR 139F E6327

Overview

BCR 139F E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistor (R1 = 22 kΩ), designed for low-power switching, level-shifting, and interface driver functions in compact logic circuits. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, h_FE = 120–630, and operates up to T_j = 150 °C - used in microcontroller GPIO buffer stages and LED driver interfaces.

For engineers reviewing the BCR 139F E6327 datasheet, BCR 139F E6327 pinout, BCR 139F E6327 application, or BCR 139F E6327 equivalent, key selection criteria include built-in R1 value (22 kΩ), SC75 package thermal resistance (R_thJS ≤ 165 K/W), guaranteed V_CE(sat) under 0.3 V, input voltage thresholds (V_i(on) ≤ 1.1 V, V_i(off) ≥ 0.4 V), and f_T = 150 MHz for high-speed digital switching.

Technical Context

This digital transistor integrates a single 22 kΩ base-emitter pull-up resistor (R1) to enable direct TTL/CMOS logic-level drive without external bias components. Its common-emitter configuration supports saturated switching with fast turn-on/turn-off due to f_T = 150 MHz and low C_cb = 3 pF.

Designed for surface-mount logic interfacing, it operates within a 0.3 V saturation voltage window at I_C = 10 mA and maintains stable h_FE across I_C = 0.1–10 mA per gain vs. current curves, supporting predictable current gain in discrete gate drivers and signal inverters.

Key Specifications

Pinout & Package

BCR 139F E6327 is housed in the SC75 (SOT-416) plastic surface-mount package: 1.6 mm × 0.8 mm footprint, 0.45 mm height, 3-terminal leadless design with gull-wing leads. Thermal resistance R_thJS ≤ 165 K/W enables operation up to 109 °C case temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN digital transistor applications.

Compared with BCR 139F E6327, BCR 140F offers higher gain for weaker drive sources, while NSVD120DP033T1G trades voltage headroom and speed for cost - making the BCR 139F the balanced choice for general-purpose 3.3/5 V interface switching with thermal and transient resilience.

Availability

BCR 139F E6327 is available at Aetrix Electronics and suitable for microcontroller GPIO buffering, LED indicator driving, logic-level translation, and small-signal relay control requiring stable component supply and long-term manufacturability.

Supply support for BCR 139F E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification (IATF 16949, ISO 9001).

The BCR series targets cost-sensitive, space-constrained digital interface applications - delivering integrated bias transistors optimized for reliability, thermal performance, and ease of use in industrial and consumer control systems.

FAQ

Is BCR 139F E6327 pin-compatible with standard SOT-23 transistors?

No - BCR 139F E6327 uses the SC75 (SOT-416) package with 1.6 mm × 0.8 mm footprint and gull-wing leads, differing from SOT-23's 2.9 mm × 1.3 mm body and longer leads. Pin order (B-E-C) matches SOT-23 pinout numbering but mechanical fit requires dedicated land pattern per Infineon's SC75 outline drawing.

What is the maximum continuous collector current at 85 °C ambient?

At T_A = 85 °C, derated P_tot = 250 mW × (1 − (85 − 25)/125) ≈ 150 mW. With V_CE(sat) ≤ 0.3 V, max continuous I_C ≈ 150 mW / 0.3 V = 500 mA - but absolute maximum rating remains I_C = 100 mA per datasheet limits, so 100 mA is the hard ceiling regardless of temperature.

Can BCR 139F E6327 be used in linear amplifier mode?

No - it is characterized and qualified exclusively for switching operation. The datasheet provides no linearity specs (e.g., distortion, THD, or small-signal parameters beyond f_T), and its integrated R1 prevents stable DC biasing for analog amplification. Use discrete BJT or purpose-built amplifiers instead.

Does the built-in R1 resistor tolerate reverse voltage on the base terminal?

Yes - R1 connects between base and emitter, forming a resistive path rated for V_EBO = 5 V. Applying negative voltage ≤ −0.3 V to the base (relative to emitter) is permissible per datasheet V_i(off) test condition, but sustained reverse bias beyond −0.5 V risks forward-conducting the BE junction and exceeding I_E limits.