Infineon Technologies BCR 139L3 E6327

Overview

BCR 139L3 E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistor (R1 = 22 kΩ), designed for low-power switching, interface, and driver circuits in compact consumer and industrial electronics. It features V_CEO = 50 V, I_C = 100 mA, P_tot = 250 mW at T_S ≤ 135°C, and h_FE = 120–630, enabling reliable logic-level signal translation in space-constrained PCBs.

For engineers reviewing the BCR 139L3 E6327 datasheet, BCR 139L3 E6327 pinout, BCR 139L3 E6327 application, or BCR 139L3 E6327 equivalent, key selection criteria include its SC75 package footprint, guaranteed V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, input voltage thresholds (V_i(on) = 0.5–1.1 V, V_i(off) = 0.4–0.8 V), and thermal resistance R_thJS ≤ 60 K/W.

Technical Context

This digital transistor integrates a precision 22 kΩ base bias resistor (R1) to eliminate external components in simple on/off control paths. Its common-emitter configuration supports direct microcontroller GPIO interfacing without level-shifting or current-limiting resistors.

It operates with guaranteed DC current gain (h_FE) across I_C = 5 mA at V_CE = 5 V, and delivers f_T = 150 MHz for moderate-speed switching up to ~10 MHz. C_cb = 3 pF ensures minimal capacitive loading in high-impedance node applications.

Key Specifications

Pinout & Package

The BCR 139L3 E6327 is housed in the SC75 (SOT-416) surface-mount package: 1.6 mm × 0.8 mm × 0.5 mm, with gull-wing leads and moisture sensitivity level (MSL) 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN digital transistor applications.

Compared with BCR139F and BCR139T, the BCR139L3 E6327 offers optimal thermal resistance (R_thJS ≤ 60 K/W) in the SC75 package-enabling higher sustained current or operation in tighter thermal envelopes without sacrificing footprint size.

Availability

BCR 139L3 E6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface expansion, level translation interfaces, and power supply enable control requiring stable component supply and consistent parametric performance.

Supply support for BCR 139L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification (ISO/TS 16949, IATF 16949).

The BCR139 series belongs to Infineon's digital transistor product line, engineered for cost-sensitive, space-constrained digital switching applications where integration of bias resistors reduces design complexity and improves assembly yield.

FAQ

What is the maximum operating temperature for BCR 139L3 E6327?

The junction temperature (T_j) must not exceed 150°C. The device is rated for total power dissipation of 250 mW at a soldering point temperature (T_S) ≤ 135°C. Derating is required above this temperature per the P_tot vs. T_S curve in the datasheet.

Can BCR 139L3 E6327 replace a standard NPN transistor like BC847?

Yes-but only in saturated-switch applications where the integrated 22 kΩ base resistor matches the required drive conditions. Unlike BC847, it lacks external base control flexibility and is not suitable for linear amplification or variable bias configurations.

Is the 22 kΩ bias resistor tolerance specified?

Yes-the R1 value is specified as 15–29 kΩ (min–max) at 25°C, corresponding to a nominal 22 kΩ with ±25% tolerance. This range is validated across production lots and accounts for process variation and temperature drift.

Does BCR 139L3 E6327 support PWM switching?

Yes-it supports PWM frequencies up to ~10 MHz, limited by f_T = 150 MHz and C_cb = 3 pF. For 100 kHz–1 MHz PWM, V_CE(sat) remains stable ≤0.3 V, and switching losses are minimized due to low stored charge and fast turn-off characteristics.