Infineon Technologies BCR 146T E6327

Overview

BCR 146T E6327 from Infineon Technologies is an NPN silicon digital transistor with integrated bias resistors (R1 = 47 kΩ, R2 = 22 kΩ), designed for switching, inverting, interfacing, and driver circuits in compact logic-level signal control applications. It features V_CEO = 50 V, I_C = 70 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, and f_T = 150 MHz.

For engineers reviewing the BCR 146T E6327 datasheet, BCR 146T E6327 pinout, BCR 146T E6327 application, or BCR 146T E6327 equivalent, key selection criteria include built-in resistor ratio (R1/R2 = 2.14 typ), thermal resistance (R_thJS ≤ 165 K/W), SOT-23 package compatibility, and guaranteed V_i(off) (1.2–2.6 V) and V_i(on) (1.5–4 V) thresholds for reliable TTL/CMOS interface operation.

Technical Context

This digital transistor integrates two precision bias resistors to eliminate external components in saturated-switch configurations. Its common-emitter DC current gain (h_FE) is specified at 50 min (I_C = 5 mA, V_CE = 5 V), and it maintains low saturation voltage under defined drive conditions.

The device operates with a maximum junction temperature of 150 °C and exhibits a collector-base capacitance of 3 pF at V_CB = 10 V, supporting high-speed switching up to 150 MHz while maintaining stable input threshold behavior across temperature and current ranges.

Key Specifications

Pinout & Package

BCR 146T E6327 is housed in a standard SOT-23 (SC-59) plastic surface-mount package with gull-wing leads, optimized for automated assembly and thermal performance on FR-4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN digital transistor applications.

Compared with BC847B,115 and NSVDARF030DZT6G, BCR 146T E6327 offers optimized R1/R2 asymmetry (2.14) for tighter V_i(on)/V_i(off) separation, enabling more reliable operation at marginal logic voltages without sacrificing speed or thermal performance.

Availability

BCR 146T E6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, level translation interfaces, and power supply enable switches requiring stable component supply and long-term industrial availability.

Supply support for BCR 146T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

BCR 146T E6327 belongs to Infineon's BCR series of digital transistors, engineered specifically for space-constrained logic interface and switching applications where integration, reliability, and repeatable threshold behavior are essential.

FAQ

Is BCR 146T E6327 RoHS compliant and halogen-free?

Yes, BCR 146T E6327 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The SOT-23 package uses lead-free matte tin plating, and material declarations confirm absence of brominated flame retardants and chlorine-based compounds.

What is the maximum operating temperature for continuous use?

The device supports continuous operation up to T_j = 150 °C. At ambient temperatures ≤ 85 °C and with proper PCB copper pour (≥ 100 mm² per pad), it sustains full 70 mA current with P_tot = 250 mW derated per the published P_tot vs. T_S curve for BCR146T.

Can BCR 146T E6327 replace a standard BJT like BC847 in existing designs?

It can replace BC847 only if the circuit relies on fixed base biasing and does not require adjustable gain or variable switching thresholds. Direct substitution requires removing the external base resistor and verifying V_i(on)/V_i(off) compatibility with the driving source's voltage levels and noise margins.

Does the internal resistor network affect switching speed in PWM applications?

No - the R1/R2 network is optimized for stable DC biasing and does not degrade f_T. Measured turn-on/turn-off times remain <15 ns at I_C = 10 mA, supporting PWM frequencies up to 10 MHz with minimal duty-cycle distortion in properly terminated layouts.