Infineon Technologies BCR 158L3 E6327

Overview

BCR 158L3 E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, and h_FE ≥ 70 at I_C = 5 mA/V_CE = 5 V. Used in low-voltage logic-level interfacing and microcontroller GPIO load driving.

For engineers reviewing the BCR 158L3 E6327 datasheet, BCR 158L3 E6327 pinout, BCR 158L3 E6327 application, or BCR 158L3 E6327 equivalent, key selection criteria include built-in resistor ratio (R1/R2 ≈ 0.047), thermal resistance R_thJS = 60 K/W, SOT-23 package compatibility, and guaranteed V_i(off) ≤ 0.8 V for reliable TTL/CMOS input level detection.

Technical Context

This digital transistor integrates two precision on-chip resistors to enable single-pin base drive without external components. Its PNP topology supports high-side switching and active-low signal inversion in 3.3 V/5 V systems.

The device operates with guaranteed DC current gain (h_FE ≥ 70) and low saturation voltage (V_CE(sat) ≤ 0.3 V), ensuring minimal power loss during conduction. Thermal performance is optimized for surface-mount operation with R_thJS = 60 K/W and T_j up to 150 °C.

Key Specifications

Pinout & Package

BCR 158L3 E6327 is housed in a standard SOT-23 (TSFP-3) plastic package, 3-pin, surface-mount, lead-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR158L3 E6327, the BCR158T offers reduced thermal performance but identical electrical specs, while BCR158F provides intermediate thermal resistance in a non-SOT-23 footprint-neither matches the L3's optimal 60 K/W R_thJS in standard SOT-23.

Availability

BCR 158L3 E6327 is available at Aetrix Electronics and suitable for industrial sensor interface, microcontroller GPIO driver, and automotive body control applications requiring stable component supply and long-term production continuity.

Supply support for BCR 158L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification (IATF 16949, ISO 9001).

The BCR158L3 E6327 belongs to Infineon's digital transistor product line, engineered for simplified logic-level interfacing and space-constrained switching in industrial and automotive control modules.

FAQ

What is the maximum continuous collector current for BCR 158L3 E6327?

The absolute maximum continuous collector current is 100 mA at T_S ≤ 135 °C. Derating applies above this temperature; at 150 °C junction temperature, the safe operating current drops to approximately 65 mA based on the P_tot vs. T_S curve. Pulse operation allows higher peak currents with duty cycle constraints.

Can BCR 158L3 E6327 replace a standard PNP BJT like BC807?

No-it cannot serve as a drop-in replacement for discrete BJTs like BC807 because it integrates base bias resistors and lacks independent base access. It functions as a complete switching unit, not a raw transistor. Use only where its digital-input behavior (Vi(on)/Vi(off)) and fixed R1/R2 ratio match system requirements.

Is BCR 158L3 E6327 RoHS and REACH compliant?

Yes-BCR 158L3 E6327 is manufactured in accordance with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The SOT-23 package uses lead-free terminations, and material declarations confirm absence of SVHC substances above threshold limits.

What is the typical transition frequency (f_T) and how does it affect switching speed?

The typical transition frequency is 200 MHz at I_C = 10 mA, V_CE = 5 V, f = 100 MHz. This enables rise/fall times under 2 ns in optimized layouts, supporting clean switching in PWM dimming and digital signal buffering up to ~50 MHz clock rates.