Infineon Technologies BCR 158T E6327

Overview

BCR 158T E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for low-power switching, level translation, and interface driver applications in compact consumer and industrial control circuits. It supports 50 V V_CEO, 100 mA I_C, 0.3 V V_CE(sat) at 10 mA/0.5 mA drive, and operates up to 150 °C junction temperature.

For engineers reviewing the BCR 158T E6327 datasheet, BCR 158T E6327 pinout, BCR 158T E6327 application, or BCR 158T E6327 equivalent, key selection criteria include built-in resistor ratio (R1/R2 ≈ 0.047), guaranteed V_i(on) ≤ 1.1 V at 2 mA load, and SOT-23 package thermal resistance (R_thJS ≤ 165 K/W) for space-constrained PCB layouts.

Technical Context

This digital transistor integrates two precision thin-film resistors to enable single-pin base drive without external components. Its PNP topology provides active-low switching with current-sinking output capability, and the fixed R1/R2 ratio ensures consistent turn-on threshold across production lots.

The device operates in common-emitter configuration with guaranteed h_FE ≥ 70 at 5 mA/5 V, and exhibits f_T = 200 MHz for moderate-speed digital transitions. V_i(off) ≤ 0.8 V ensures reliable cutoff under noisy logic-level inputs.

Key Specifications

Pinout & Package

BCR 158T E6327 is housed in a standard SOT-23 (SC-59) plastic surface-mount package with gull-wing leads, optimized for automated placement and reflow soldering on high-density PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR158L3 E6327, the BCR158T E6327 trades thermal performance for SOT-23 compatibility; versus NSV15801T1G, it delivers higher voltage margin and gain stability-critical for industrial 24 V interfaces.

Availability

BCR 158T E6327 is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO expansion, industrial sensor interfaces, and power supply enable control requiring stable component supply and long-term sourcing continuity.

Supply support for BCR 158T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification (IATF 16949, ISO 9001).

The BCR158 series belongs to Infineon's digital transistor product line, engineered for simplified logic interfacing and compact switching in cost-sensitive, space-constrained applications across consumer, industrial, and automotive domains.

FAQ

What is the maximum continuous collector current for BCR 158T E6327?

The absolute maximum continuous collector current is 100 mA at T_S ≤ 109 °C. Derating is required above this case temperature per the P_tot vs. T_S curve, with total power dissipation limited to 250 mW at T_S = 25 °C and decreasing linearly to zero at 109 °C.

Can BCR 158T E6327 replace a standard PNP BJT like BC807?

No-it cannot directly replace a bare PNP BJT because it includes integrated base resistors. Using it in place of BC807 would alter biasing and likely cause incorrect switching behavior. It replaces discrete BJT + two resistors, not the BJT alone.

Is the R1/R2 ratio temperature-stable across the operating range?

Yes-the R1/R2 ratio is specified as 0.042–0.052 over −65 °C to +150 °C, with typical value 0.047 at 25 °C. This tight ratio tolerance ensures consistent V_i(on) and V_i(off) behavior across industrial temperature ranges.

Does BCR 158T E6327 support PWM-driven loads?

Yes-its 200 MHz f_T and ≤ 0.3 V V_CE(sat) support PWM frequencies up to ~20 MHz. For typical LED dimming (1–10 kHz), it delivers efficient switching with minimal rise/fall time degradation due to internal resistor network capacitance.