Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BCR158WE6327HTSA1

Part No.:
BCR158WE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
AetrixBCR158WE6327HTSA1.pdf
Description:
TRANS PREBIAS PNP 50V SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,657

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCR158WE6327HTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, and AEC-Q101 qualification.

For engineers reviewing the BCR158WE6327HTSA1 datasheet, BCR158WE6327HTSA1 pinout, BCR158WE6327HTSA1 application, or BCR158WE6327HTSA1 equivalent, this part serves as a ready-to-use logic-level PNP switch with built-in base biasing-eliminating external resistor networks in microcontroller-driven load control, LED drivers, and level-shifting interfaces.

Technical Context

This digital transistor integrates two precision on-chip resistors to configure a fixed-current base drive topology, enabling direct connection to CMOS/TTL logic outputs without external components. Its PNP structure supports high-side switching with active-low input control, and its SOT323 package delivers enhanced thermal resistance (RthJS ≤ 105 K/W) versus SOT23 variants.

The device operates across −40 °C to +125 °C junction temperature, with guaranteed hFE ≥ 70 at IC = 5 mA/VCE = 5 V and fT = 200 MHz, supporting fast edge transitions in pulse-width modulated (PWM) and digital signal routing applications.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive and industrial supply rails.
IC100 mA - Continuous collector current rating; suitable for driving relays, small solenoids, and indicator LEDs.
VCE(sat)≤ 0.3 V at IC = 10 mA/IB = 0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching mode.
R1 / R22.2 kΩ / 47 kΩ - Fixed internal bias network provides stable turn-on/turn-off thresholds for logic-compatible operation.
fT200 MHz - Transition frequency confirms suitability for high-speed digital switching up to ~10–20 MHz square waves.
AEC-Q101Qualified - Meets stress test requirements for automotive electronics, including temperature cycling and HTRB.
Ptot (TS ≤ 124 °C)250 mW - Total power dissipation limit at specified heatsink temperature; defines safe continuous operating envelope.

Pinout & Package

BCR158WE6327HTSA1 is housed in a RoHS-compliant SOT323 (SC-70) surface-mount package, measuring 2.1 mm × 1.25 mm × 0.9 mm, optimized for space-constrained PCB layouts and automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)EEmitter terminal - connected to positive rail in high-side switch configuration; referenced to logic ground via load.
2 (Base)BBase input node - internally biased through R1/R2 network; accepts TTL/CMOS logic low (≤0.4 V) to activate conduction.
3 (Collector)CCollector output - sinks current from load to ground when active; used for driving LEDs, optocouplers, or gate inputs.

Key Features

FeatureDesign Value
Integrated bias resistorsR1 = 2.2 kΩ, R2 = 47 kΩ - eliminates need for external base resistors, reducing BOM count and layout area.
Logic-compatible input thresholdVi(off) ≤ 0.8 V, Vi(on) ≥ 0.5 V - ensures reliable switching with standard 3.3 V and 5 V digital outputs.
Low VCE(sat)≤ 0.3 V - reduces conduction loss and improves efficiency in battery-powered and thermally sensitive designs.
AEC-Q101 qualificationQualified per Rev. G - validated for automotive under-hood and body-control module environments.
Thermal performanceRthJS ≤ 105 K/W - enables higher sustained current capability in compact SOT323 footprint versus SOT23 alternatives.

Applications

Automotive Body Control ModuleIndustrial PLC Output Stage

Use Scenario: Driving door lock actuators and interior lighting loads from MCU GPIO pins in 12 V vehicle systems.

IC Role / Device Role / Timing Role: High-side PNP switch providing logic-level controlled current sink to ground for resistive and inductive loads.

Use Value: Eliminates discrete base resistor network, reduces PCB area by >30%, and ensures robust turn-off under EMI-rich vehicle environments.

Use Scenario: Isolating and amplifying 24 V DC digital outputs from programmable logic controllers to field devices.

IC Role / Device Role / Timing Role: Level-shifting interface transistor converting 3.3 V/5 V controller logic to 24 V load drive capability.

Use Value: Delivers consistent VCE(sat) < 0.3 V across −40 °C to +125 °C, ensuring deterministic timing in real-time control loops.

LED Driver for Smart SensorsMicrocontroller GPIO Expander

Use Scenario: Driving status LEDs on environmental sensor nodes powered by coin-cell or energy-harvesting sources.

IC Role / Device Role / Timing Role: Low-quiescent-current PNP switch enabling precise on/off control with minimal standby leakage (IEBO ≤ 164 µA).

Use Value: Built-in R2 resistor limits base current during off-state, reducing total system sleep current below 1 µA.

Use Scenario: Extending limited GPIO count of ARM Cortex-M0+ MCUs to drive multiple peripheral enable lines.

IC Role / Device Role / Timing Role: Digital buffer with gain and polarity inversion, accepting active-low logic to drive active-high peripherals.

Use Value: hFE ≥ 70 at 5 mA ensures full saturation even with weak MCU drive strength, avoiding partial turn-on failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BCR158E6327HTSA1SOT23 package; RthJS ≤ 240 K/W; Ptot = 200 mW at TS ≤ 102 °CLower power handling and higher thermal resistance - suited for lower-duty-cycle or ambient-temperature-limited designs.Select when board space allows larger SOT23 and thermal budget permits reduced continuous current.
NSV15800T1GPNP digital transistor (R1 = 2.2 kΩ, R2 = 47 kΩ); SOT323; AEC-Q101 qualified; VCEO = 50 V, IC = 100 mAIdentical electrical specs and qualification; different marking and traceability - drop-in replacement with alternate sourcing.Choose for dual-sourcing flexibility while maintaining identical thermal, switching, and reliability behavior.

Compared with BCR158WE6327HTSA1, the SOT23-based BCR158E6327HTSA1 trades thermal performance for legacy footprint compatibility, while NSV15800T1G offers identical functional and mechanical specifications with alternate logistics chain support.

Availability

BCR158WE6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, smart sensor LED indicators, and microcontroller GPIO expansion requiring stable component supply and AEC-Q101 compliance.

Supply support for BCR158WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global R&D and manufacturing infrastructure.

BCR158WE6327HTSA1 belongs to Infineon's BCR family of digital transistors, engineered specifically for simplified, high-reliability switching in automotive and industrial control applications where space, BOM count, and qualification are critical.

FAQ

What is the maximum allowable base-emitter reverse voltage for BCR158WE6327HTSA1?

The maximum input reverse voltage (Vi(rev)) is 5 V, defined as the peak reverse voltage that may be applied between base and emitter terminals without risking junction damage or parametric shift. This rating supports safe operation when interfacing with open-drain or actively pulled-up logic buses, and must not be exceeded even transiently in system design.

Does BCR158WE6327HTSA1 require an external pull-down resistor on the base pin?

No. The internal R2 resistor (47 kΩ) provides a defined path from base to emitter, ensuring reliable turn-off when the input is left floating or driven high-impedance. External pull-down is unnecessary and may degrade noise immunity or increase standby current if improperly sized.

Can BCR158WE6327HTSA1 be used in linear amplifier configurations?

No. This device is optimized and characterized exclusively for switching operation. Its hFE variation over IC, lack of linearity data, and absence of small-signal parameters (e.g., rπ, gm) in the datasheet confirm it is not intended for analog amplification. Use dedicated general-purpose PNP transistors like BC807 for such roles.

How does the SOT323 package affect thermal derating compared to SOT23?

The SOT323 package achieves lower junction-to-solder-point thermal resistance (RthJS ≤ 105 K/W vs. ≤ 240 K/W for SOT23), allowing 25% higher continuous power dissipation (250 mW vs. 200 mW) at the same heatsink temperature. This directly extends usable current range in thermally constrained layouts without forced cooling.

BCR158WE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
200 MHz
Power - Max:
250 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT323

BCR158WE6327HTSA1 FAQ

1.How can I place an order for BCR158WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCR158WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCR158WE6327HTSA1 reliable?

The price and inventory of BCR158WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR158WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BCR158WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR158WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCR158WE6327HTSA1?

BCR158WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCR158WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCR158WE6327HTSA1?

For technical support, including BCR158WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR158WE6327HTSA1 requirements.

6.How does Aetrix verify that BCR158WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BCR158WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR158WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BCR158WE6327HTSA1?

All BCR158WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR158WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCR158WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BCR158WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCR158WE6327HTSA1 Tags

  • BCR158WE6327HTSA1
  • BCR158WE6327HTSA1 PDF
  • BCR158WE6327HTSA1 Datasheet
  • BCR158WE6327HTSA1 Specifications
  • BCR158WE6327HTSA1 Images
  • Infineon Technologies
  • Infineon Technologies BCR158WE6327HTSA1
  • Buy BCR158WE6327HTSA1
  • BCR158WE6327HTSA1 Price
  • BCR158WE6327HTSA1 Distributor
  • BCR158WE6327HTSA1 Supplier
  • BCR158WE6327HTSA1 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER