Infineon Technologies BCR 164T E6327

Overview

BCR 164T E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 4.7 kΩ, R2 = 10 kΩ), rated for 50 V V_CEO, 100 mA I_C, and 250 mW P_tot at T_S ≤ 109°C in SC75 package. It functions as a single-chip switch in low-power interface and driver circuits, eliminating external base resistors in microcontroller GPIO-driven loads.

For engineers reviewing the BCR 164T E6327 datasheet, BCR 164T E6327 pinout, BCR 164T E6327 application, or BCR 164T E6327 equivalent, key selection criteria include verified R1/R2 ratio (0.47), V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, f_T = 160 MHz, and SC75 thermal resistance R_thJS ≤ 165 K/W - critical for space-constrained logic-level switching designs.

Technical Context

This device integrates two precision thin-film resistors (R1 = 4.7 kΩ ±23%, R2 = 10 kΩ) directly on the die to form a monolithic PNP transistor with fixed base bias network. Its common-emitter configuration supports direct TTL/CMOS logic-level drive without external components.

Designed for DC switching rather than linear amplification, it exhibits guaranteed V_i(on) ≤ 1.4 V at I_C = 2 mA/V_CE = 0.3 V and V_i(off) ≥ 0.5 V at I_C = 100 µA/V_CE = 5 V, enabling robust noise margin in digital control paths.

Key Specifications

Pinout & Package

BCR 164T E6327 uses the SC75 (SOT-416) surface-mount package: 1.6 mm × 0.8 mm footprint, 0.45 mm height, single-row 3-pin layout with gull-wing leads. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR164L3 and BCR164F, the BCR164T E6327 trades higher thermal resistance (R_thJS ≤ 165 K/W) for the smallest SC75 footprint - optimal where board area is constrained and ambient temperature stays below 70°C.

Availability

BCR 164T E6327 is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO expanders, small relay drivers, and level-shifter interfaces requiring stable component supply and consistent digital switching behavior.

Supply support for BCR 164T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices with global manufacturing and quality certification to ISO/TS 16949.

The BCR164 series belongs to Infineon's digital transistor product line, designed specifically for replacing discrete BJT + resistor combinations in cost-sensitive, space-constrained digital switching applications.

FAQ

What is the exact pin configuration of BCR 164T E6327?

BCR 164T E6327 uses SC75 (SOT-416) package with Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches the marking layout shown in Infineon's official package drawing, confirmed by top-side laser marking "BCR164T" with orientation dot adjacent to Pin 1.

Does BCR 164T E6327 require an external pull-down resistor?

No. The internal R2 resistor connects base to collector, providing active pull-up, while R1 pulls base toward emitter. This built-in network ensures defined logic states without external components - verified by V_i(off) ≥ 0.5 V and V_i(on) ≤ 1.4 V test conditions in the datasheet.

Can BCR 164T E6327 replace a standard PNP BJT like BC807?

Only in switching applications where the internal R1/R2 network is acceptable. Unlike BC807, BCR 164T E6327 cannot operate as a linear amplifier or in configurations requiring adjustable base bias - its fixed resistor values constrain bias point flexibility per the datasheet's guaranteed V_i(on)/V_i(off) specs.

What is the maximum allowable pulse current for BCR 164T E6327?

Permissible pulsed collector current depends on duty cycle and pulse width. At D = 0.02 and t_p = 100 µs, P_tot(max)/P_tot(DC) reaches 10×, allowing up to ~316 mA peak for short durations - derived from the "Permissible Pulse Load" curves on page 6 of the official Infineon datasheet.