Infineon Technologies BCR166E6393HTSA1

Overview

BCR166E6393HTSA1 from Infineon Technologies is an NPN digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ), designed for low-power switching in logic interface circuits. It operates at V_CEO = 50 V, I_C = 100 mA, and features a DC current gain (h_FE) of 160–450 at I_C = 10 mA. It is commonly used in microcontroller GPIO driver stages for LED or relay control.

For engineers reviewing the BCR166E6393HTSA1 datasheet, BCR166E6393HTSA1 pinout, BCR166E6393HTSA1 application, or BCR166E6393HTSA1 equivalent, key selection criteria include integrated base resistors, guaranteed h_FE range, SOT-23 package thermal performance, and compatibility with 3.3 V/5 V logic-level drive.

Technical Context

This device integrates two precision 10 kΩ resistors to simplify external component count in saturated-switch configurations. Its emitter-grounded topology supports direct connection to microcontroller outputs without pull-up or base-current-limiting resistors.

The SOT-23 package enables high-density PCB layouts while maintaining thermal resistance (R_thJA) of 350 K/W under standard JEDEC conditions. Device behavior is characterized across -55 °C to +150 °C ambient, supporting industrial-grade operation.

Key Specifications

Pinout & Package

SOT-23 surface-mount package with gull-wing leads, 1.3 mm × 2.9 mm footprint, and 1.1 mm height. Standard pin assignment per JEDEC TO-236AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BC847B,115 and NSV12201T1G, BCR166E6393HTSA1 uniquely delivers fixed 10 kΩ biasing in an NPN emitter-grounded configuration-enabling drop-in replacement in existing logic-level switch designs without layout revision.

Availability

BCR166E6393HTSA1 is available at Aetrix Electronics and suitable for LED indicator systems, microcontroller interface expansion, and relay control circuits requiring stable component supply and long-term manufacturability.

Supply support for BCR166E6393HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.

BCR166E6393HTSA1 belongs to the BCR series of digital transistors, engineered specifically for reducing external component count in logic-level switching applications across consumer, industrial, and automotive domains.

FAQ

What is the maximum continuous collector current for BCR166E6393HTSA1?

The maximum continuous collector current is 100 mA at T_A = 25 °C. Derating applies above 25 °C ambient: current must be reduced linearly to 0 mA at 150 °C case temperature, per the device's thermal limits and SOA curve.

Can BCR166E6393HTSA1 replace a standard NPN transistor like BC547 in all circuits?

No-it cannot directly replace BC547 in amplifier or linear-mode applications due to its fixed internal bias network. It is optimized for saturated switching only, where the integrated 10 kΩ resistors define base current unconditionally.

Is the SOT-23 package of BCR166E6393HTSA1 lead-free and RoHS compliant?

Yes-BCR166E6393HTSA1 is manufactured in a lead-free, RoHS-compliant process per EU Directive 2011/65/EU, with halogen-free molding compound and matte-tin-plated terminals meeting J-STD-020 moisture sensitivity level 1.

What is the typical V_CE(sat) at I_C = 10 mA and I_B = 0.1 mA?

Typical V_CE(sat) is 0.13 V under those conditions. This low saturation voltage minimizes power loss and self-heating during switching, supporting efficient operation in battery-powered and thermally sensitive designs.