Infineon Technologies BCR166E6433HTMA1

Overview

BCR166E6433HTMA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control modules. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, and AEC-Q101 qualification.

For engineers reviewing the BCR166E6433HTMA1 datasheet, BCR166E6433HTMA1 pinout, BCR166E6433HTMA1 application, or BCR166E6433HTMA1 equivalent, this part supports robust low-side switching in 12 V automotive body electronics, offers predictable turn-on/off thresholds (V_i(on) = 0.5–1.4 V, V_i(off) = 0.4–0.8 V), and delivers stable h_FE ≥ 70 at I_C = 5 mA.

Technical Context

This digital transistor integrates two on-chip resistors to enable direct logic-level drive without external biasing. Its PNP topology allows active-low switching control in high-impedance input stages, with guaranteed V_CE(sat) ≤ 0.3 V ensuring minimal power loss during conduction.

The device operates across –65 °C to 150 °C junction temperature, supports pulse loads up to P_tot(max)/P_tot(DC) = 10 at t_p = 10 µs (D = 0), and exhibits f_T = 160 MHz for moderate-speed switching applications such as LED drivers and sensor interface buffers.

Key Specifications

Pinout & Package

BCR166E6433HTMA1 is housed in a RoHS-compliant SOT-23 plastic package (JEDEC TO-236AB), with standard 3-pin configuration and 1.3 mm pitch. Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR166E6433HTMA1, BCR198E6327HTMA1 trades faster switching for lower base current draw, while NSV11201MT1G matches electrical behavior but offers superior thermal management in smaller footprint-neither is pin-compatible due to differing package outlines.

Availability

BCR166E6433HTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input conditioning, and smart sensor power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for BCR166E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

BCR166E6433HTMA1 belongs to Infineon's BCR-series digital transistors, engineered specifically for simplified, reliable switching in automotive and industrial interface applications where board space and design cycle time are constrained.

FAQ

What is the maximum allowable base-emitter reverse voltage for BCR166E6433HTMA1?

The maximum input reverse voltage (V_i(rev)) is specified as 5 V. This rating applies to the base-emitter junction when the internal R1–R2 network is reverse-biased, such as during negative transient events on the input pin. Exceeding 5 V may cause irreversible damage to the integrated resistors or junction.

Can BCR166E6433HTMA1 be used in linear amplifier configurations?

No. BCR166E6433HTMA1 is optimized for digital switching operation only. Its integrated bias resistors fix the base operating point, and its h_FE is characterized only under switching conditions (I_C = 5 mA, V_CE = 5 V). Linear amplification requires externally adjustable bias and is not supported by this digital transistor architecture.

Is the SOT-23 package of BCR166E6433HTMA1 compatible with standard reflow profiles?

Yes. The RoHS-compliant SOT-23 package supports standard lead-free reflow soldering per IPC/JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤ 30 seconds, and thermal profile must respect the device's maximum junction temperature of 150 °C during assembly.

How does the built-in R1/R2 ratio affect switching speed?

The R1/R2 ratio of 0.1 determines the effective base drive strength and discharge path. A lower ratio (e.g., 0.1 vs. 0.2) provides stronger turn-off capability, reducing storage time and improving maximum switching frequency. For BCR166E6433HTMA1, this enables reliable operation up to ~5 MHz in practical PCB layouts with minimal parasitic inductance.