Infineon Technologies BCR 166L3 E6327

Overview

BCR 166L3 E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ), designed for low-power switching, level-shifting, and interface driver functions in compact logic circuits. It delivers V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA / I_B = 0.5 mA, and h_FE ≥ 70, enabling direct microcontroller GPIO drive in industrial sensor interfaces.

For engineers reviewing the BCR 166L3 E6327 datasheet, BCR 166L3 E6327 pinout, BCR 166L3 E6327 application, or BCR 166L3 E6327 equivalent, key selection criteria include built-in resistor ratio (R1/R2 = 0.1), thermal resistance (R_thJS ≤ 60 K/W), SOT-23-3 package compatibility, and guaranteed V_i(off) ≤ 0.8 V for reliable TTL/CMOS input interfacing.

Technical Context

This digital transistor integrates two precision thin-film resistors to form a monolithic PNP switch with fixed base biasing-eliminating external components in high-volume logic-level translation. Its R1/R2 ratio of 0.1 ensures stable saturation under varying temperature and supply conditions.

The device operates in common-emitter configuration with guaranteed h_FE ≥ 70 at I_C = 5 mA and V_CE = 5 V, and supports f_T = 160 MHz for fast edge response in pulse-width modulated control signals up to 10 MHz.

Key Specifications

Pinout & Package

BCR 166L3 E6327 uses the SOT-23-3 (TSFP-3) surface-mount package with standard lead frame geometry and JEDEC-compliant footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR 166L3 E6327, BCR169L3 E6327 offers complementary polarity but requires redesign of control logic, while NSVD120SN3T5G trades lower noise immunity for higher voltage tolerance-making the original optimal for 3.3 V industrial I/O where space and component count are critical.

Availability

BCR 166L3 E6327 is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller GPIO expansion, optocoupler input drivers, and low-power relay control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BCR 166L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BCR166 series belongs to Infineon's digital transistor product line, engineered specifically for cost-sensitive, high-reliability logic interface and switching applications in factory automation and building control systems.

FAQ

What is the maximum operating temperature for BCR 166L3 E6327?

The junction temperature (T_j) is rated to 150 °C, and the package supports total power dissipation of 250 mW up to a soldering point temperature (T_S) of 135 °C. Derating begins linearly above that point per the P_tot vs. T_S curve in the datasheet, with R_thJS ≤ 60 K/W confirming thermal performance on standard PCB layouts.

Can BCR 166L3 E6327 replace a standard PNP BJT like BC807?

No-it cannot directly replace a bare PNP BJT because it integrates base bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ). Using it in place of BC807 would require removing external base resistors and verifying logic thresholds; its V_i(on) (0.5–1.4 V) and V_i(off) (0.4–0.8 V) define a specific input window not present in discrete transistors.

Is BCR 166L3 E6327 RoHS compliant and halogen-free?

Yes-Infineon certifies BCR 166L3 E6327 as RoHS-compliant (2011/65/EU) and halogen-free per IEC 61249-2-21, with material declarations confirming <900 ppm bromine and <900 ppm chlorine in homogeneous materials, verified through supplier-controlled manufacturing and lot-level testing.

What is the typical transition frequency and how does it affect switching speed?

The typical transition frequency f_T is 160 MHz at I_C = 10 mA and V_CE = 5 V, indicating usable bandwidth for digital switching up to ~10 MHz. This enables sub-10 ns rise/fall times in properly terminated 5 V logic paths, making it suitable for PWM-driven LEDs or fast sensor signal conditioning without added gate drivers.