Infineon Technologies BCR 183T E6327

Overview

BCR 183T E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for low-power switching, level translation, and interface driver functions in compact logic circuits. It supports 50 V V_CEO, 100 mA I_C, 0.3 V V_CE(sat) at 10 mA/0.5 mA drive, and operates up to 150 °C junction temperature - used in portable sensor interfaces and microcontroller GPIO expansion.

For engineers reviewing the BCR 183T E6327 datasheet, BCR 183T E6327 pinout, BCR 183T E6327 application, or BCR 183T E6327 equivalent, key selection criteria include built-in resistor matching, SOT-23 package thermal resistance (R_thJS ≤ 165 K/W), guaranteed V_i(on)/V_i(off) thresholds, and PNP digital switching behavior without external base biasing.

Technical Context

This device integrates two matched resistors (R1/R2 = 0.9–1.1) directly into a monolithic PNP transistor die, enabling single-resistor-input logic-level switching. Its V_i(on) (1–2.5 V) and V_i(off) (0.8–1.8 V) define clean TTL/CMOS-compatible thresholds under 5 V supply conditions.

The SOT-23 package delivers R_thJS ≤ 165 K/W and supports continuous 250 mW dissipation at T_S ≤ 109 °C, making it suitable for thermally constrained PCB layouts where discrete bias networks would increase footprint and component count.

Key Specifications

Pinout & Package

BCR 183T E6327 uses the standard SOT-23 (TSFP-3) plastic surface-mount package with gull-wing leads and a 1.3 mm × 2.9 mm footprint. Thermal pad is not present; soldering must follow JEDEC MS-012 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BCR 183T E6327, BCR193T E6327 offers complementary NPN functionality in identical packaging, while NSVD120DP03MX trades smaller size for higher voltage rating and different biasing - both require logic inversion or layout changes to substitute directly.

Availability

BCR 183T E6327 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface expansion, industrial sensor signal conditioning, and low-power logic inversion requiring stable component supply and long-term manufacturability.

Supply support for BCR 183T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BCR183 series belongs to Infineon's digital transistor product line, engineered specifically for eliminating discrete bias networks in cost-sensitive, space-constrained digital interface applications across consumer, industrial, and automotive domains.

FAQ

Is BCR 183T E6327 pin-compatible with standard SOT-23 transistors?

No - BCR 183T E6327 uses the SOT-23 (TSFP-3) outline but assigns Pin 1 to the base-input node of its internal resistor divider, not the base of a bare transistor. Standard PNP SOT-23 devices (e.g., BC807) have Pin 1 = emitter, so direct substitution will cause functional failure without circuit redesign.

What is the maximum ambient temperature for continuous operation?

At 109 °C case temperature (T_S), BCR 183T E6327 delivers its full 250 mW rated power. Derating begins above that point per the P_tot vs. T_S curve. For 50 °C ambient, typical PCB copper area allows ~75 °C case rise, supporting full-rated operation without forced cooling.

Can this device replace a standard BJT in linear amplifier configurations?

No - BCR 183T E6327 is optimized for digital switching only. Its integrated resistors fix the base bias point, preventing adjustable Q-point setting. The h_FE range (30 min) and lack of linear-region characterization make it unsuitable for analog amplification or active-load applications.

Does the built-in resistor network affect ESD robustness?

Yes - the on-chip 10 kΩ resistors limit peak ESD current during HBM events, contributing to the device's qualified 2 kV HBM rating. However, the resistors do not replace system-level TVS protection on exposed I/O lines; they only provide intrinsic device-level current limiting during transient discharge.