Infineon Technologies BCR 192L3 E6327

Overview

BCR 192L3 E6327 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = 22 kΩ, R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits. It features dual galvanically isolated transistors in one SOT-323 (SC-70) package, 50 V V_CEO, 100 mA I_C, and 250 mW P_tot at T_S ≤ 135 °C.

For engineers reviewing the BCR 192L3 E6327 datasheet, BCR 192L3 E6327 pinout, BCR 192L3 E6327 application, or BCR 192L3 E6327 equivalent, key selection criteria include built-in resistor ratio (R1/R2 = 0.47), V_i(on) = 0.8–2.5 V, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, h_FE ≥ 70, and thermal resistance R_thJS ≤ 60 K/W.

Technical Context

This dual-transistor device integrates two matched PNP digital transistors with independent emitter-base-collector terminals and internal bias networks. Each transistor has separate base-emitter and collector-emitter paths, enabling independent switching control without cross-coupling.

It operates as a pre-biased switch with fixed input resistor values (R1 = 22 kΩ, R2 = 47 kΩ), eliminating external bias components. The design supports common-emitter configuration with guaranteed V_i(off) ≤ 1.2 V and transition frequency f_T ≥ 200 MHz at I_C = 10 mA/V_CE = 5 V.

Key Specifications

Pinout & Package

BCR 192L3 E6327 is housed in a SOT-323 (SC-70) plastic surface-mount package with six leads and dual isolated transistor structure. Pin numbering follows standard top-view orientation with marking dot indicating Pin 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with BCR192T and BCR192U, the BCR192L3 E6327 delivers superior thermal resistance (≤60 K/W) in the smallest SC-70 footprint, enabling higher sustained current density and better suitability for space-constrained, thermally demanding applications like portable sensor modules.

Availability

BCR 192L3 E6327 is available at Aetrix Electronics and suitable for logic-level interfacing, LED driving, redundant power switching, and signal inverter pair applications requiring stable component supply and long-term industrial availability.

Supply support for BCR 192L3 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The BCR192 series belongs to Infineon's digital transistor product line, engineered for simplified logic interfacing and compact switching in space- and cost-sensitive embedded systems.

FAQ

What is the maximum operating junction temperature for BCR 192L3 E6327?

The absolute maximum junction temperature is 150 °C, as specified in the Absolute Maximum Ratings table. Operation above this value risks permanent degradation of the silicon die and integrated resistors. Derating begins at case temperatures above 135 °C, where total power dissipation must be reduced linearly to maintain T_j ≤ 150 °C.

Can BCR 192L3 E6327 replace a standard PNP BJT in existing circuits?

Yes, but only if the circuit relies on externally biased switching and can accommodate the fixed R1/R2 network. The built-in 22 kΩ/47 kΩ resistors set defined V_i(on) and V_i(off) thresholds-direct substitution without schematic review may cause incorrect turn-on behavior or excessive base current draw.

Is the dual-transistor structure internally isolated or coupled?

The two transistors are galvanically isolated-no shared emitter, base, or collector connections exist between TR1 and TR2. Pin 2 (E1) and Pin 4 (E2) are separate terminals, enabling fully independent operation, including use with different reference potentials or supply rails.

Does BCR 192L3 E6327 support PWM-driven loads?

Yes-it supports pulse-width modulated switching up to frequencies where stored charge effects remain negligible (typically ≤5 MHz). Its f_T ≥ 200 MHz and low V_CE(sat) ensure fast turn-on/turn-off transitions and minimal switching loss, provided gate/base drive strength meets I_B = 0.5 mA requirement for full saturation.