Infineon Technologies BCR198E6327HTSA1

Overview

BCR198E6327HTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features V_CEO = 50 V, I_C = 100 mA, V_CE(sat) ≤ 0.3 V at I_C = 10 mA/I_B = 0.5 mA, h_FE ≥ 70, and AEC-Q101 qualification.

For engineers reviewing the BCR198E6327HTSA1 datasheet, BCR198E6327HTSA1 pinout, BCR198E6327HTSA1 application, or BCR198E6327HTSA1 equivalent, key selection criteria include built-in resistor matching, thermal resistance (R_thJS ≤ 240 K/W), SOT23 package compatibility, and guaranteed DC current gain across −40°C to 125°C.

Technical Context

This digital transistor integrates two matched resistors (R1/R2 = 0.9–1.1) to simplify base drive design and eliminate external bias components. Its PNP topology enables high-side switching in low-voltage logic-controlled loads, with guaranteed V_i(on) (1–3 V) and V_i(off) (0.8–1.5 V) thresholds for reliable TTL/CMOS interfacing.

The device operates with f_T = 190 MHz and C_cb = 3 pF, supporting fast switching up to ~10 MHz in discrete logic-level translation. Junction temperature is rated to 150°C, and thermal derating follows a defined P_tot(T_S) curve with T_S ≤ 102°C for full 200 mW dissipation.

Key Specifications

Pinout & Package

BCR198E6327HTSA1 is housed in a RoHS-compliant SOT23-3 surface-mount package (JEDEC TO-236AB), with standard pin 1 marking and 1.3 mm pitch. Thermal resistance R_thJS ≤ 240 K/W enables stable operation at board temperatures up to 102°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Compared with BC807-40,215 and NSV198000T1G, BCR198E6327HTSA1 offers optimal balance of integrated biasing, low V_CE(sat), and guaranteed 3.3 V logic compatibility-making it the most direct drop-in solution for space-constrained automotive and industrial digital switching.

Availability

BCR198E6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, LED dashboard drivers, and smart appliance power sequencing requiring stable component supply and AEC-Q101 assurance.

Supply support for BCR198E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

BCR198E6327HTSA1 belongs to Infineon's BCR series of digital transistors-designed specifically for replacing discrete BJT + resistor combinations in cost-sensitive, high-reliability automotive and industrial signal switching applications.

FAQ

What is the maximum continuous collector current for BCR198E6327HTSA1?

The absolute maximum continuous collector current is 100 mA at T_S ≤ 102°C. Derating applies above this case temperature: total power dissipation drops linearly to zero at 150°C junction temperature. Pulse operation allows higher peak currents if duty cycle and pulse width remain within permissible limits defined by R_thJS ≤ 240 K/W.

Does BCR198E6327HTSA1 require an external base resistor?

No. It integrates two 47 kΩ bias resistors (R1 and R2) internally, enabling direct connection to logic outputs without external components. R1 connects base to input, R2 connects base to emitter-forming a voltage divider that sets precise turn-on and turn-off thresholds for reliable digital switching.

Is BCR198E6327HTSA1 compatible with 3.3 V microcontroller GPIOs?

Yes. Its V_i(on) range (1–3 V) ensures activation with typical 3.3 V MCU VOH (≥ 2.4 V), and V_i(off) (0.8–1.5 V) provides noise margin against logic-low leakage. Measured h_FE ≥ 70 at I_C = 5 mA confirms robust saturation under standard 3.3 V drive conditions.

How does the AEC-Q101 qualification impact BCR198E6327HTSA1's use in industrial designs?

AEC-Q101 validation subjects the device to accelerated stress tests-including temperature cycling, high-temperature reverse bias, and ESD-exceeding standard industrial requirements. This ensures superior long-term reliability in harsh environments (e.g., factory floors, outdoor enclosures), justifying its use where field failure risk must be minimized, even outside automotive programs.